GC PIN DIODE Search Results

Contextual Info: SIEMENS Silicon Switching Diodes BAW 78 A . BAW 78 D • Switching applications * • High breakdown voltage Type Marking Ordering Code tape and reel BAW 78 A BAW 78 B BAW 78 C BAW 78 D GA GB GC GD Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration

A778

Abstract: A778 transistor a784 Q62702-A779 Q62702-A778 A779 Q62702-A109 Q62702-A784
Contextual Info: Silicon Switching Diodes BAW 78 A … BAW 78 D Switching applications ● High breakdown voltage ● Type Marking Ordering Code tape and reel BAW 78 A BAW 78 B BAW 78 C BAW 78 D GA GB GC GD Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration

SOT89 marking GA

Abstract: BAW78B SOT89 marking GD BAW78C BAW78D Diode Marking C.3 diode 78a BAW78A BAW78 VPS05162
Contextual Info: BAW78A.BAW78D Silicon Switching Diodes 1
Switching applications 2
High breakdown voltage 3 2 VPS05162 2 1 EHA07007 Type Marking Pin Configuration Package BAW78A GA 1=A 2=C 3 = n.c. SOT89 BAW78B GB 1=A 2=C 3 = n.c. SOT89 BAW78C GC 1=A 2=C 3 = n.c. SOT89

MDIO clause 45 specification

Abstract: SDX4102LR 10Gbe SDX4101 X2 SDX4102LR 10G APD 1310nm 10Gig SDX4102LR-GC-M SK410 10GBASE-LR
Contextual Info: TS-S06D317B October, 2007 10Gb/s X2 Optical Transceiver Module SDX4102LR-GC-M 10GBASE-LR, 1310nm DFB, PIN-PD Features ‹ 10Gb/s Serial Optical Interface ¾ In-house high quality and reliability optical sub-assemblies ¾ 1310nm DFB laser for up to 10km over single

MARKING GA

Abstract: Q62702-A779 Q62702-A778
Contextual Info: SIEM EN S Silicon Switching Diodes BAW 78 A . BAW 78 D • Switching applications • High breakdown voltage Type BAW BAW BAW BAW 78 78 78 78 A B C D Marking Ordering Code tape and reel GA GB GC GD Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration

80-B4

Abstract: TS-S07D087B 800B 807E SDX4101 806-D 8098 PID 80-4B 807D
Contextual Info: TS-S07D087B October, 2007 10Gb/s X2 Optical Transceiver Module SDX4101LM-GC-M 10GBASE-LRM, 1310nm FP-LD, PIN-PD Features ‹ 10Gb/s Serial Optical Interface ¾ In-house high quality and reliability optical sub-assemblies ‹ ‹ ‹ ‹ ¾ 1310nm FP laser ¾

ga sot-89

Abstract: SOT89 marking GA diode 78a SOT89 marking GD MARKING GA SOT-89 marking GC diode baw 78b
Contextual Info: BAW 78A . BAW 78D Silicon Switching Diodes 1 • Switching applications 2 • High breakdown voltage 3 2 VPS05162 2 1 EHA07007 Type Marking Pin Configuration Package BAW 78A GA 1=A 2=C 3 = n.c. SOT-89 BAW 78B GB 1=A 2=C 3 = n.c. SOT-89 BAW 78C GC 1=A 2=C

SMD diode DB3

Abstract: SMD diode N20 SMD diode DB6 8c 617 transistor AD7545JN AD7545KN AD7545SQ AD7545TQ DB10 AD7545
Contextual Info: a CMOS 12-Bit Buffered Multiplying DAC AD7545 FEATURES 12-Bit Resolution Low Gain TC: 2 ppm/؇C typ Fast TTL Compatible Data Latches Single +5 V to +15 V Supply Small 20-Lead 0.3" DIP and 20-Terminal Surface Mount Packages Latch Free Schottky Protection Diode Not Required

diode SR 34

Contextual Info: Sample & Buy Product Folder Support & Community Tools & Software Technical Documents UCD7138 SLVSCS1B – MARCH 2015 – REVISED MAY 2015 UCD7138 4-A and 6-A Single-Channel Synchronous-Rectifier Driver With Body-Diode Conduction Sensing and Reporting 1 Features

1N21B diode

Abstract: 1N21* Diode Detector Holder 1N28 diode 1N21B 1N23CR diode 1N358A 1N358AMR 1N358AR 1N358AM 1N53 ON
Contextual Info: M IL -S-19500/339 17 D^5«sb«r 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VIDEO DETECTOR TYPES 1N358A, 1N358AE, 1N358AM, AND 1NS58AMR This sp ecification is mandatory for u se by all Departm ents and A gen cies of the Department of D efen se.

3550C

Abstract: 5KP Series 3Kp Transistor tvs cr 3050B r-6 package
Contextual Info: Banned Substances Report Generated 05/19/05. Reference Report No.: CE/2005/52487A RoHS Compliance Product Type: Part Number Series: TVS Diodes R-6 package type 3KP series & 5KP series Test Result PART NAME NO. 1: PART NAME NO. 2: PART NAME NO. 3: BLACK PLASTIC BODY / WITH WHITE PRINTING (CE/2005/15132)

3050B

Contextual Info: Banned Substances Report Generated 05/19/05. Reference Report No.: CE/2005/52500B RoHS Compliance Product Type: Part Number Series: TVS Diodes & Thyristor SMB package type P6SMBJ series & WPSCDS series Test Result PART NAME NO. 1: PART NAME NO. 2: PART NAME NO. 3:

LTC5592

Abstract: marking c5a 8 pins LTC5593 LTC5590 LTC5591
Contextual Info: LTC5593 Dual 2.3GHz to 4.5GHz High Dynamic Range Downconverting Mixer DESCRIPTION FEATURES n n n n n n n n n n n n n n Conversion Gain: 8.5dB at 2500MHz IIP3: 27.7dBm at 2500MHz Noise Figure: 9.5dB at 2500MHz 15.9dB NF Under 5dBm Blocking High Input P1dB 52dB Channel Isolation at 2500MHz

LTC5593

Abstract: 2595MHz LTC5590 LTC5591 LTC5592 LTC5593IUH N4000-13 marking G85
Contextual Info: Electrical Specifications Subject to Change LTC5593 Dual 2.3GHz to 4.5GHz High Dynamic Range Downconverting Mixer DESCRIPTION FEATURES n n n n n n n n n n n n n n Conversion Gain: 8.4dB at 2550MHz IIP3: 27.8dBm at 2550MHz Noise Figure: 9.5dB at 2550MHz 15.9dB NF Under 5dBm Blocking

LTC5551

Abstract: LTC6946
Contextual Info: LTC5551 300MHz to 3.5GHz Ultra-High Dynamic Range Downconverting Mixer Description Features +36dBm Input IP3 n 2.4dB Conversion Gain n Low Noise Figure: <10dB n +18dBm Ultra High Input P1dB n 670mW Power Consumption n 2.5V to 3.6V Operation n 50Ω Single-Ended RF and LO Inputs

LTC5551

Abstract: LTC5585 LTC6946
Contextual Info: LTC5551 300MHz to 3.5GHz Ultra-High Dynamic Range Downconverting Mixer Description Features +36dBm Input IP3 n 2.4dB Conversion Gain n Low Noise Figure: <10dB n +18dBm Ultra High Input P1dB n 670mW Power Consumption n 2.5V to 3.6V Operation n 50Ω Single-Ended RF and LO Inputs

Contextual Info: MIC95410 6.6mΩ RDS ON , 7A, 5.5V VIN Load Switch in 1.2mm x 2.0mm QFN Package General Description Features The MIC95410 is a high-side load switch for computing and ultra-dense embedded computing boards where highcurrent low-voltage rails from sub-1V to 5.5V have to be

EUDYNA

Abstract: ka-band mixer fmm5117 A114 es JESD22-A114-C RO4003
Contextual Info: ES/FMM5117YE K,Ka-Band Down-Converter MMIC FEATURES •High Conversion Gain, Gc = -11 dB Typ. •High Linearity •Broad RF Frequency Band ; 20 - 30 GHz •SMT Laminate Package (YE Package) •Impedance Matched Zin/Zout = 50 DESCRIPTION The FMM5117YE is a double, single balanced diode mixer downconverter MMIC. The device consists of a low noise mixer, LO

ka-band mixer

Abstract: A114 es FMM5116YE JESD22-A114-C RO4003 Ka-band
Contextual Info: ES/FMM5116YE K,Ka-Band Up-Converter MMIC FEATURES •High Conversion Gain, Gc = -11 dB Typ. •High Linearity •Broad RF Frequency Band ; 20 - 30 GHz •SMT Laminate Package (YE Package) •Impedance Matched Zin/Zout = 50 DESCRIPTION The FMM5116YE is a double, single balanced diode mixer upconverter MMIC. The device consists of a low noise mixer, LO

AAT4681IDE-T1

Abstract: SMPS circuit for charging 6v battery AAT4681IDE AAT4681 AAT4681IDE-1-T1 12v 50 A battery charger smps schematic 10L5 AAT4681-1 circuit SCHEMATIC DIAGRAM SMPS 12v 5A AAT4681-2
Contextual Info: PRODUCT DATASHEET AAT4681 SmartSwitchTM 20mΩ P-Ch SmartSwitch for UMPC Battery Charging Applications General Description Features The AAT4681 SmartSwitch enables separate stand-alone AC adapter and PMU USB chargers to independently control a single low RDS ON power MOSFET between battery

pin function of ic an 5522

Abstract: ltc5534 AN 5522 GRP1555C1H101J LT5522EUF GRP155R71C103K LMK316BJ475ML LT5522 LTC1748 ssb demodulator ic
Contextual Info: LT5522 400MHz to 2.7GHz High Signal Level Downconverting Mixer U FEATURES DESCRIPTIO • The LT 5522 active downconverting mixer is optimized for high linearity downconverter applications including cable and wireless infrastructure. The IC includes a high speed

Contextual Info: DATA SHEET AAT4681 20mΩ P-Channel SmartSwitch for UMPC Battery Charging Applications General Description Features The AAT4681 SmartSwitch enables separate stand-alone AC adapter and PMU USB chargers to independently control a single low RDS ON power MOSFET between battery

LTE Receiver

Abstract: LTC5592 RIF 206 1090Mhz LNA LTC5590 LTC5591 LTC5593 LTC5569 g40220 LTC5592IUH
Contextual Info: Electrical Specifications Subject to Change LTC5592 Dual 1.6GHz to 2.7GHz High Dynamic Range Downconverting Mixer DESCRIPTION FEATURES n n n n n n n n n n n n n n Conversion Gain: 8.3dB at 2.35GHz IIP3: 27.3dBm at 2.35GHz Noise Figure: 9.8dB at 2.35GHz 16.4dB NF Under 5dBm Blocking

LTC5569

Abstract: LT5554 LT5579 LTC5593 LTC5590 LT5578 LTC5583 LT5557 LTC5592
Contextual Info: LTC5590 Dual 600MHz to 1.7GHz High Dynamic Range Downconverting Mixer DESCRIPTION FEATURES n n n n n n n n n n n n n n Conversion Gain: 8.7dB at 900MHz IIP3: 26dBm at 900MHz Noise Figure: 9.7dB at 900MHz 15.6dB NF Under 5dBm Blocking High Input P1dB 53dB Channel Isolation at 900MHz