GC 840 Search Results

gc864

Abstract: GC864-PY GC864-QUAD sim 300 gsm module sim 300 gsm gsm 07.05 of GSM sim 300 DTMF and emergency sms SIM holder M2M SIM
Contextual Info: wireless solutions GSM | GPRS wireless solutions GC 864-QUAD Compact GC 864-PY Compact QUALITY INVESTMENT PROTECTION The new GC864 product family is one of the smallest GSM/GPRS quad-band ­modules with industrial connectors in the market. BUSINESS SCALABLE

vistanet

Abstract: PGC1000 ABB pressure regulator gas chromatograph abb PGC 2000 BUASC2-1-0607 ppm dew point solenoid valve pgc 2000 abb metal detector service manual gas solenoid valve
Contextual Info: Data Sheet Process Gas Chromatograph PGC1000 Analyzer Products Field Mounted GC DESCRIPTION STANDARD FEATURES The PGC1000 is a field mounted GC using two analytical trains per analyzer that enable measurements of C1 thru C9+, inerts and H2S in various Hydrocarbon Processing Industry HPI streams.

Contextual Info: CXG1081TN Receiving Dual-Band Mixer Description The CXG1081TN is a receiving dual-band mixer MMIC. This IC is designed using the Sony's GaAs JFET process. 16 pin TSSOP Plastic Features • High conversion gain Gc = 9.5 to 10.0dB (Typ.) • Low noise figure

10PIN

Abstract: CXG1081TN
Contextual Info: CXG1081TN Receiving Dual-Band Mixer Description The CXG1081TN is a receiving dual-band mixer MMIC. This IC is designed using the Sony's GaAs JFET process. 16 pin TSSOP Plastic Features • High conversion gain Gc = 9.5 to 10.0dB (Typ.) • Low noise figure

burndy Y35 Hypress owner manual

Abstract: burndy Y39 Hypress owner manual Burndy Y35 hypress burndy Y35 burndy Y750 UL-467 Penetrox A Electric Joint Compound Y750 REVOLVER HYPRESS GBM STEP MOTOR burndy Y750HS user manual
Contextual Info: GC-08 www.burndy.com CALL 1-800-346-4175 FOR YOUR LOCAL SALES REPRESENTATIVE BURNDY PRODUCTS BURNDY PRODUCTS Grounding Catalog Experience. Technology. Answers. Customer Service Dept. 7 Aviation Park Drive Londonderry, NH 03053 1-800-346-4175 Canada 1-800-361-6975 Quebec

10PIN

Abstract: CXG1081TN
Contextual Info: CXG1081TN Receiving Dual-Band Mixer Description The CXG1081TN is a receiving dual-band mixer MMIC. This IC is designed using the Sony's GaAs JFET process. 16 pin TSSOP Plastic Features • High conversion gain Gc = 9.5 to 10.0dB (Typ.) • Low noise figure

10PIN

Abstract: CXG1111EN GC712 L-367
Contextual Info: CXG1111EN 800MHz Band Receive Mixer Description The CXG1111EN is a mixer MMIC for the Japan CDMA cellular. This IC is designed using the Sony’s GaAs J-FET process. Features • High conversion gain: Gc = 13.0dB Typ. • Low noise figure: NF = 4.5dB (Typ.)

E-9843

Abstract: IRF 740 N
Contextual Info: SONY CXG 1050TN Receiving Dual-Band Mixer Description The CXG1050TN is a receiving dual-band mixer MMIC. This IC is designed using the Sony's GaAs JFET process. Features • High conversion gain Gc = 9.5dB Typ. • Low noise figure NF = 4.9 to 5.2dB (Typ.)

sony

Abstract: 10PIN CXG1111EN vson-10p-01
Contextual Info: CXG1111EN 800MHz Band Receive Mixer Description The CXG1111EN is a mixer MMIC for the Japan CDMA cellular. This IC is designed using the Sony’s GaAs J-FET process. Features • High conversion gain: Gc = 13.0dB Typ. • Low noise figure: NF = 4.5dB (Typ.)

BF772W

Abstract: sot-23 CODE BF 550 SOT143 BF799W HF-transistoren
Contextual Info: Transistoren Transistors Hochlinearer Abwärtsm ischer Ultralinear Down Converter Type CMY 200 Maximum Ratings Package Characteristics TA = 25 °C; VD - 5 V / rF = 1224 MH z , / lo = 1185 MHz.yip = 39 MHz, PLQ = 5 dBm Vä V Pm dBm /d Gc ^P3in mA dB dB 6

Contextual Info: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.2 February 2004 Samsung Electronics reserves the right to change products or specification without notice.

16PIN

Abstract: CXG1050TN L7107
Contextual Info: CXG1050TN Receiving Dual-Band Mixer Description The CXG1050TN is a receiving dual-band mixer MMIC. This IC is designed using the Sony's GaAs JFET process. 16 pin TSSOP Plastic Features • High conversion gain Gc = 9.5dB (Typ.) • Low noise figure NF = 4.9 to 5.2dB (Typ.)

K4D26323RA-GC33

Abstract: GC33 K4D26323AA-GL K4D26323RA-GC K4D26323RA-GC2A K4D26323RA-GC36
Contextual Info: * VDD / VDDQ=2.8V * K4D26323RA-GC 128M DDR SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 2.0 January 2003 Samsung Electronics reserves the right to change products or specification without notice.

SOT323-6

Abstract: BF772W
Contextual Info: Transistoren Transistors Hochlinearer Abwärtsmischer Ultralinear Down Converter Maximum Ratings Type Package Characteristics 7"A = 25 °C; VD * 5 V 1224 M H z , / Lo = 1185 MHz ,fF= 39 MHz, PLQ = 5 dBm / RF = T CMY 200 Và V P<„ dBm I<j Gc Ip3in mA dB

Contextual Info: * VDD / VDDQ=2.8V * K4D26323RA-GC 128M DDR SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.9 August 2002 Samsung Electronics reserves the right to change products or specification without notice.

K4D26323RA-GC36

Abstract: GC33 K4D263238A-GC33 K4D26323AA-GL K4D26323RA-GC K4D26323RA-GC2A K4D26323RA-GC33
Contextual Info: * VDD / VDDQ=2.8V * K4D26323RA-GC 128M DDR SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.5 December 2001 Samsung Electronics reserves the right to change products or specification without notice.

Contextual Info: CD 28L QL Series 4 000 - 10 000h at 105°C CD 269 PH • Miniaturized · Low Impedance, High Current · Switching Power Supply 125°C 85°C CD 110 PT smaller CD 287 GC CD 28L QL lower ESR lowest ESR longest life Radial CD 281 LL CD 284 XY Item Characteristics

m073

Abstract: r 3589 C6403
Contextual Info: 07/17/9S AMP FftX-> 07 :HI :58 mu ampia n i ZSl EE ü P»ac 00-4 07/ 17/9S 07 :-*2 :-46 AH I> Fftx > —• »>mb w HanciTiaw CM 54 W IWV PCT gC 0 7 3 0 -4 3 4 y g * -«1 f#-.073*.0»C POST TO WITHSTAND 13 NEWTONS 3183.; MIN. A X IA L PORCE in both directions shown without dislomins.

Contextual Info: CD 263 BK Series 2000h a t 105°C CD 269 PH CD 11G GW S ta n d a rd 105*0 125*C longer life CD 110 PT CD 287 GC CD 261 LK 1 105”C lo w e r ESR Items C haracteristics O p e ra tin g Tem perature Range *C -40 - +105 -2 5 -+ 1 0 5 V o lta g e Range (V) 6.3 - 250

CD 8403

Abstract: ML840 Raytheon Company ML-8403
Contextual Info: ML-8403 PAGE I IS S U E D 1 1-63 gÂCHLËg ML-8403 D ESCRIPTIO N AND RATINGS DESCRIPTION T h e M L - 8 4 0 3 is a r u g g e d iz e d , h ig h -m u p la n a r trio d e o f c ap a c ita n ce , h igh tran sco n d u ctan ce an d h igh m u, this tube ce ra m ic -a n d -m etal c o n stru ctio n , d e sig n e d fo r u se as a g rid -

16PIN

Abstract: CXG1050TN
Contextual Info: CXG1050TN Receiving Dual-Band Mixer For the availability of this product, please contact the sales office. Description The CXG1050TN is a receiving dual-band mixer MMIC. This IC is designed using the Sony's GaAs JFET process. 16 pin TSSOP Plastic Features

L9150

Abstract: 16PIN CXG1109EN
Contextual Info: CXG1109EN Receive Dual Low Noise Amplifier/Mixer Description The CXG1109EN is a receive dual low noise amplifier/ mixer MMIC. This IC is designed using the Sony’s GaAs J-FET process. 16 pin VSON Plastic Features • High conversion gain: Gp = 16.5 to 17dB (LNA Typ.)

GP318

Contextual Info: CXG1082EN Receive Dual Low Noise Amplifier/Mixer Description The CXG1082EN is a receive dual low noise amplifier/ mixer MMIC. This IC is designed using the Sony’s GaAs J-FET process. 16 pin VSON Plastic Features • High conversion gain: Gp = 17dB (LNA Typ.)

16PIN

Abstract: CXG1082EN GC1210 sony 330
Contextual Info: CXG1082EN Receive Dual Low Noise Amplifier/Mixer For the availability of this product, please contact the sales office. Description The CXG1082EN is a receive dual low noise amplifier/ mixer MMIC. This IC is designed using the Sony’s GaAs J-FET process.