GC 39 Search Results

1608G

Abstract: 1005GC2T1N5S00 1608GC2T27N 1608GC2T33N 1608GC2T8N2 HP6612C 1005GC2T1N 1608GC2T1N5S00 1608GC2T2N2S00 1608GC2T6N8
Contextual Info: MULTILAYER CERAMIC CHIP INDUCTORS 1005 0402 GC / 1608(0603) GC Series Features 1. 2. 3. 4. Designed for high frequency RF application. High self resonant frequency(SRF)and excellent Q. Multilayered ceramic construction provides high reliability. Miniature size : 1005(0402) / 1608(0603)

ECJ-0EB1E102K, "Material Declaration"

Abstract: ECJ-0EB1E102K "Material Declaration" ECJ0EC1H010C RF2483 DS110505 ERJ-2GEJ105
Contextual Info: RF2483 RF2483Low Noise DualBand Quadrature Modulator with AGC LOW NOISE DUAL-BAND QUADRATURE MODULATOR WITH AGC       RF OUT LB GC Mode Control & Biasing VCC2 2 * 15 GC DEC Power Control 14 VREF  ISIG P 3 13 QSIG P ISIG N 4 12 QSIG N +45°

Contextual Info: RF2483 RF2483Low Noise DualBand Quadrature Modulator with AGC LOW NOISE DUAL-BAND QUADRATURE MODULATOR WITH AGC       RF OUT LB GC Mode Control & Biasing VCC2 2 * 15 GC DEC Power Control 14 VREF  ISIG P 3 13 QSIG P ISIG N 4 12 QSIG N +45°

Contextual Info: F-207 GC AM-08-4-1 H -S-2 GC AM -08-4-2 H-S-1 HIGH S P E E D /H IG H DENSITY CABLE SYSTEM DATABANK BOARD INTERFACE SP EC IFIC A T IO N S GCAM SERIES Mates with: GCCA For complete specifications and recommended PCB layouts see www.samtec.com?GCAM Insulator Material:

900uf

Abstract: CD287GC
Contextual Info: CD 287 GC Series 4 000 - 10 000h at 105°C CD 269 PH • Low Impedance · High Ripple Current · SMPS, UPS 125°C 85°C CD 110 PT smaller CD 287 GC CD 28L QL lower ESR lowest ESR longest life CD 281 LL CD 284 XY Item Characteristics Operating Temperature Range °C

7721

Abstract: 597-7721-5XX
Contextual Info: ED Dîalî ght Surface Mount LED Bi-Color 3.00 _ '[.1 1 8 ] 1.30 [051] _ 2.30 _ [.091]" t /TERMINAL .50 -[.020] I R, Y 2.50 597-77x1-5xx t \ ,-, [ ,- , v CATHODE MARK J 1L “ ^i.oo1 *[.039] 2 3 4 7701 RC RA GC GA 7721 YC YA GC GA LAND P A T T E R N _

Contextual Info: QB-144-CA-01's pin header cover for 78K0R/LF3 80pin GK/GC package CP1 GND 41 N.C. 56 63 57 64 60 65 58 66 59 67 61 68 62 69 N.C. 70 N.C. 77 N.C. 78 N.C. 79 N.C. 80 N.C. N.C. N.C. N.C. N.C. N.C. N.C. N.C. N.C. 1 N.C. GND GND 78K0R/LF3 80pinGK/GC CP2 CP3 CP4

Contextual Info: AFE840x System Evaluation Kit and GC Studio Reference User's Guide Literature Number: SLWU034A May 2006 – Revised November 2008 2 SLWU034A – May 2006 – Revised November 2008 Submit Documentation Feedback Contents . 5

21CFR1040

Abstract: Zbf 34 SDM7111-GC SDM7111-XC
Contextual Info: Specification : TS-S98D043B Date : August , 2000 Technical Specification for Optical Transceiver Module SDM7111-XC SDM7111-GC 155.52Mb/s 622.08Mb/s other _ Short Haul Intermediate Reach other _ Single 5.0 V Long Haul Long Reach Single 3.3 V

SDM7301-XC

Abstract: SCM7301-XC SDM7301-GC-ZN SDM7301-XC-W TA-NWT-000253 ZBF253D-00 fourth order low pass filter
Contextual Info: Specification : TS-S96D016E Date : October, 2000 Technical Specification for Optical Transceiver Module SDM7301-XC SDM7301-GC 155.52Mb/s 622.08Mb/s other _ Short Haul Intermediate Reach other _ Single 5.0 V Long Haul Long Reach Single 3.3 V

R40/16

Abstract: r40-16 CA3154 CA3154E V11L schematic diagram 12v dc to 3 phase inverter CA31 tv tuner for pc schematic diagram
Contextual Info: CA3154 May 1999 [ /Title CA31 54 /Subject (TV Sync/A GC/Ho rizontal Signal Processor) /Autho r () /Keywords (Harris Semiconductor, TV sync processor, horizontal oscillator, horizontal processor, sync separator, AFC circuit, AGC cir- T UCT ROD ACEMEN 47 P

SOT323-6

Abstract: BF772W
Contextual Info: Transistoren Transistors Hochlinearer Abwärtsmischer Ultralinear Down Converter Maximum Ratings Type Package Characteristics 7"A = 25 °C; VD * 5 V 1224 M H z , / Lo = 1185 MHz ,fF= 39 MHz, PLQ = 5 dBm / RF = T CMY 200 Và V P<„ dBm I<j Gc Ip3in mA dB

Contextual Info: Preliminary Information CMOS MASK ROM K3P7C1000B-GC 64M-Bit 8Mx8 /4Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access

K3N7C1000B-GC

Contextual Info: Preliminary Information CMOS MASK ROM K3N7C1000B-GC 64M-Bit 8Mx8 /4Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V

Contextual Info: CXG1081TN Receiving Dual-Band Mixer Description The CXG1081TN is a receiving dual-band mixer MMIC. This IC is designed using the Sony's GaAs JFET process. 16 pin TSSOP Plastic Features • High conversion gain Gc = 9.5 to 10.0dB (Typ.) • Low noise figure

Contextual Info: 256M gDDR2 SDRAM K4N56163QF-GC 256Mbit gDDR2 SDRAM Revision 2.0 October 2005 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: 256M gDDR2 SDRAM K4N56163QF-GC 256Mbit gDDR2 SDRAM 4M x 16Bit x 4 Banks gDDR2 SDRAM with Differential Data Strobe and DLL Revision 1.5 March 2005 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev 1.5 Mar. 2005

SOP-36

Abstract: SOP36
Contextual Info: K3N7C1000M-GC CMOS MASK ROM 64M-Bit 8Mx8 /4Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access time : 120ns(Max.) • Supply voltage : single +5V • Current consumption

Contextual Info: 256M gDDR2 SDRAM K4N56163QF-GC 256Mbit gDDR2 SDRAM 4M x 16Bit x 4 Banks gDDR2 SDRAM with Differential Data Strobe and DLL Revision 1.3 January 2005 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev 1.3 Jan. 2005

10PIN

Abstract: CXG1081TN
Contextual Info: CXG1081TN Receiving Dual-Band Mixer Description The CXG1081TN is a receiving dual-band mixer MMIC. This IC is designed using the Sony's GaAs JFET process. 16 pin TSSOP Plastic Features • High conversion gain Gc = 9.5 to 10.0dB (Typ.) • Low noise figure

Contextual Info: K3P6C1000B-GC CMOS MASK ROM 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 8 words/ 16 bytes page access

k4n26323ae

Abstract: K4N26 K4N26323AE-GC20 K4N26323AE-GC22 K4N26323AE-GC25
Contextual Info: 128M GDDR2 SDRAM K4N26323AE-GC 128Mbit GDDR2 SDRAM 1M x 32Bit x 4 Banks GDDR2 SDRAM with Differential Data Strobe and DLL Revision 1.7 January 2003 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 1.7 Jan. 2003

10PIN

Abstract: CXG1081TN
Contextual Info: CXG1081TN Receiving Dual-Band Mixer Description The CXG1081TN is a receiving dual-band mixer MMIC. This IC is designed using the Sony's GaAs JFET process. 16 pin TSSOP Plastic Features • High conversion gain Gc = 9.5 to 10.0dB (Typ.) • Low noise figure

10PIN

Abstract: CXG1111EN GC712 L-367
Contextual Info: CXG1111EN 800MHz Band Receive Mixer Description The CXG1111EN is a mixer MMIC for the Japan CDMA cellular. This IC is designed using the Sony’s GaAs J-FET process. Features • High conversion gain: Gc = 13.0dB Typ. • Low noise figure: NF = 4.5dB (Typ.)