GB50SLT12-CAL SPICE Search Results

GB50SLT12-CAL SPICE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
GB50SLT12-CAL SPICE Abstract: high-temperature-sic-bare-die Contextual Info: Die Datasheet GB50SLT12-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA50SLT12-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * * * * * $Revision: 1.0 $Date: 20-SEP-2013 *	Original	GB50SLT12-CAL GA50SLT12-CAL. 20-SEP-2013 curB50SLT12 GB50SLT12 99E-16 86E-09 00E-10 GB50SLT12-CAL SPICE high-temperature-sic-bare-die	PDF
Contextual Info: Electrical Datasheet* GB50SLT12-CAL Silicon Carbide Power Schottky Diode Chip VRRM VF IF QC = = = = 1200 V 1.5 V 50 A 247 nC Features •      1200 V Schottky rectifier 175 °C maximum operating temperature Electrically isolated base-plate	Original	GB50SLT12-CAL GB50SLT12-CAL GB50SLT12 TEMP-24) 39E-05) 99E-16 86E-09 00E-10	PDF
GB50SLT12-CAL Abstract: high-temperature-sic-bare-die Contextual Info: Die Datasheet GB50SLT12-CAL Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 1200 V 100 A 158 nC Features •       1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability	Original	GB50SLT12-CAL GB50SLT12 99E-16 86E-09 00E-10 00E-03 GB50SLT12-CAL high-temperature-sic-bare-die	PDF

Catalog Datasheet

Type

Document Tags

PDF

GB50SLT12-CAL SPICE

Abstract: high-temperature-sic-bare-die
Contextual Info: Die Datasheet GB50SLT12-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA50SLT12-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * * * * * $Revision: 1.0 $Date: 20-SEP-2013 *

Original

GB50SLT12-CAL GA50SLT12-CAL. 20-SEP-2013 curB50SLT12 GB50SLT12 99E-16 86E-09 00E-10 GB50SLT12-CAL SPICE high-temperature-sic-bare-die

PDF

Contextual Info: Electrical Datasheet* GB50SLT12-CAL Silicon Carbide Power Schottky Diode Chip VRRM VF IF QC = = = = 1200 V 1.5 V 50 A 247 nC Features •      1200 V Schottky rectifier 175 °C maximum operating temperature Electrically isolated base-plate

Original

GB50SLT12-CAL GB50SLT12-CAL GB50SLT12 TEMP-24) 39E-05) 99E-16 86E-09 00E-10

PDF

GB50SLT12-CAL

Abstract: high-temperature-sic-bare-die
Contextual Info: Die Datasheet GB50SLT12-CAL Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 1200 V 100 A 158 nC Features •       1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability

Original

GB50SLT12-CAL GB50SLT12 99E-16 86E-09 00E-10 00E-03 GB50SLT12-CAL high-temperature-sic-bare-die

PDF