GB01SHT12-CAL SPICE Search Results

GB01SHT12-CAL SPICE

Abstract: high-temperature-sic-bare-die
Contextual Info: Die Datasheet GB01SHT12-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB01SHT12-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * *

Contextual Info: Electrical Datasheet* GB01SHT12-CAL Silicon Carbide Power Schottky Diode Chip Features •       1200 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability

Contextual Info: Die Datasheet GB01SHT12-CAL High Temperature Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 1200 V 2.5 A 6 nC Features •        1200 V Schottky rectifier 250°C maximum operating temperature Zero reverse recovery charge