GATE NOR Search Results

TC4000BP

Contextual Info: C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4000BP TC4000BP DUAL 3-INPUT NOR GATE PLUS INVERTER The TC4000BP is a combined gate which contains dual 3-input positive NOR gate plus inverter in one package. Since all the outputs of this gate are provided with

Field-Programmable Gate Arrays

Contextual Info: TPC14 SERIES CMOS FIELD-PROGRAMMABLE GATE ARRAYS ^ JA N U A RY 1993 • • • • • • Gate Capacities from < 1,000 to > 10,000 Gate Array Gates Gate Capacities from < 2,500 to > 25,000

Contextual Info: TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC7SH02F/FU 2-Input NOR Gate The TC7SH02 is an advanced high speed CMOS 2-Input NOR Gate fab­ ricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar SchottkyTTL while maintaining the

Contextual Info: Revised November 1999 100304 Low Power Quint AND/NAND Gate General Description Features The 100304 is monolithic quint AND/NAND gate. The Function output is the wire-NOR of all five AND gate outputs. All inputs have 50 kΩ pull-down resistors. • Low Power Operation

74LS27 truth table

Contextual Info: TOSHIBA TC74HC27AP/AF/AFN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC27AP, TC74HC27AF, TC74HC27AFN Note The JEDEC SOP (FN) is not available in Japan. TRIPLE 3 -IN P U T NOR GATE The TC74HC27A is a high speed CMOS 3-INPUT NOR GATE fabricated with silicon gate C2MOS technology.

Contextual Info: INTEGRATED T O SH IB A CIRCUIT TECHNICAL TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC74HCT02AP/AF/AFN DATA SILICON MONOLITHIC QUAD 2 -IN P U T NOR GATE The TC74HCT02A is a high speed CMOS 2-INPUT NOR GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation sim ilar to equivalent

PF328

Contextual Info: TC4501BP C zM O S DIG IT A L IN T E G R A T E D C IRCUIT S IL IC O N M O N O L IT H IC TC4501BP TRIPLE GATE Dual 4-Input NAND Gate and 2-Input NOR/OR Gate or 8-Input AND/NAND Gate T h e T C 4 5 0 1 B P i s a c o m b in e d g a t e w h i c h c o n t a i n s

Contextual Info: $GYDQFHG 3RZHU 026 7 IRL510A FEATURES BVDSS = 100 V ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology RDS(on) = 0.44Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 5.6 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area

Contextual Info: TC4085BP C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4085BP DUAL 2-WIDE 2-INPUT AND-OR-INVERT GATE TC4085BP contains two circuits of AND-OR select gates and the outputs are inverted. The circuit consists of two 2 input AND gates and one NOR gate,

Contextual Info: Revised November 1999 100301 Low Power Triple 5-Input OR/NOR Gate General Description Features The 100301 is a monolithic triple 5-input OR/NOR gate. All inputs have 50 kΩ pull-down resistors and all outputs are buffered. • 23% power reduction of the 100101

Contextual Info: QFET N-CHANNEL FQD3N25, FQU3N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 6.0nC Typ.

Contextual Info: QFET P-CHANNEL FQP7P20 FEATURES BVDSS = −200V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 19nC Typ. •

Contextual Info: QFET N-CHANNEL FQB13N06L, FQI13N06L FEATURES BVDSS = 60V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 4.8nC Typ.

Contextual Info: QFET N-CHANNEL FQB6N70, FQI6N70 FEATURES BVDSS = 700V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 30nC Typ.

Contextual Info: QFET N-CHANNEL FQB4N20, FQI4N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 5.0nC Typ.

Contextual Info: QFET N-CHANNEL FQB1N60, FQI1N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 5.0nC Typ.

Contextual Info: QFET N-CHANNEL FQB6N45, FQI6N45 FEATURES BVDSS = 450V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 16nC Typ.

Contextual Info: QFET N-CHANNEL FQB5N50, FQI5N50 FEATURES BVDSS = 500V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 13nC Typ.

Contextual Info: QFET N-CHANNEL FQB50N06, FQI50N06 FEATURES BVDSS = 60V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 31nC Typ.

Contextual Info: QFET N-CHANNEL FQD2N60, FQU2N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 9.0nC Typ.

Contextual Info: QFET N-CHANNEL FQD2N50, FQU2N50 FEATURES BVDSS = 500V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 6.0nC Typ.

Contextual Info: QFET N-CHANNEL FQD3N40, FQU3N40 FEATURES BVDSS = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 6.0nC Typ.

marking 3G

Contextual Info: TC4S01F TO SHIBA C MOS DIGITAL INTEGRATED C IR C U IT SILICO N M ONOLITHIC 2 INPUT NOR GATE Unit in mm + 0.2 23-0.3 The TC4S01F is 2-input positive logic NOR gates. + 0.2 Gate output w ith in v e rte r buffer im proves the 16 input-output ch arac te ristic s and if th e load

tc9800

Contextual Info: 3. N o t e s o n D e s i g n i n g a n d H a n d l in g C ir c u it s 3.1 Electrostatic D ischarge CMOS ICs have a very thin gate insulation oxide film. W hen a high voltage is applied to this gate electrode input of CMOS IC , the oxide film directly under the gate som etimes