GAN POWER MOSFET Search Results

"gallium nitride" mosfet

Abstract: 48V MOSFET LM5113 GaN power MOSFET "gallium nitride" Half-Bridge Driver
Contextual Info: First Gate Driver for Enhancement Mode GaN Power FETs 100V Half-Bridge Driver Enables Greater Efficiency, Power Density, and Simplicity national.com/isolatedpower Gallium Nitride Power FETs Deliver New Levels of Power Density Enhancement mode Gallium Nitride GaN power FETs can

Demands for High-efficiency Magnetics in GaN Power Electronics

Abstract: 20n60cfd TPH3006
Contextual Info: APEC 2014, Fort Worth, Texas, March 16-20, 2014, IS2.5.3 Demands for High-efficiency Magnetics in GaN Power Electronics Yifeng Wu, Transphorm Inc. Table of Contents 1. 1st generation 600V GaN-on-Si HEMT properties and performance 2. GaN HEMT high-frequency application examples

BZX385-C11

Abstract: zener diode A29
Contextual Info: AN11130 Bias module for 50 V GaN demonstration boards Rev. 1 — 8 December 2011 Application note Document information Info Content Keywords GaN, bias Abstract This application note describes a bias controller module for GaN HEMT RF power transistors. It provides constant quiescent drain current with

MGA-444940-02

Abstract: 10 watt power amplifier chassis schematic diagram WPS44492202 2N2907 IRF242 GaN Bias 25 watt 56 OHM RESISTOR
Contextual Info: MGA-444940-02 4.4 - 4.9 GHz 10W High Efficiency High Power Amplifier Data Sheet and Application Note May 2010 FEATURES APPLICATIONS GaN Based High Power Amplifier Telemetry 20% Efficiency at 33 dBm Linear Output Power Avionics 40 dBm P-3dB Private Microwave Network Systems

Contextual Info: MGA-444940-02 4.4 - 4.9 GHz 10W High Efficiency High Power Amplifier Data Sheet and Application Note May 2010 FEATURES APPLICATIONS GaN Based High Power Amplifier Telemetry 20% Efficiency at 33 dBm Linear Output Power Avionics 40 dBm P-3dB Private Microwave Network Systems

Pulse Power Amplifier Design

Contextual Info: Pulse Power Amplifier Design 02/19/2011 Class A/B power amplifier design using MOSFET or GAN devices may utilize several circuit topologies to achieve pulse amplification with fast rise-time and minimal ringing. This paper will review several techniques with their attributes and limitation or short comings.

Contextual Info: 1EDI EiceDRIVER Compact 1EDI20N12AF Single Channel MOSFET and GaN HEMT Gate Driver IC 1EDI20N12AF Preliminary Data Sheet Rev. 1.02, 2014-04-08 Industrial Power Control Edition 2014-04-08 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG

LK141

Abstract: 60W VHF TV RF amplifier
Contextual Info: An Introduction to Polyfet RF Devices Who is Polyfet RF Devices? Established in 1987, Polyfet RF Devices is a California based manufacturer of broadband LDMOS, VDMOS, and GaN power transistors and power modules. Polyfet’s Financials • • • • • Private corporation

Contextual Info: PRELIMINARY RFJS3006F rGAN-HVTM 650V SSFET With Ultra-Fast Freewheeling Diode The RFJS3006F is a 30A, 650V normally-off sourced switched FET SSFET GaN HEMT providing the same insulated gate ease of use as a power MOSFET or an IGBT, but enabling much higher efficiency at much higher PWM frequencies. The SSFET uses

SiC-JFET

Abstract: SiC JFET Gan on silicon transistor EPC Gan transistor Gan on silicon substrate SiC jfet cascode silicon carbide JFET normally on SiC BJT 600V GaN DMOS SiC
Contextual Info: Gallium Nitride GaN versus Silicon Carbide (SiC) In The High Frequency (RF) and Power Switching Applications Introduction Work on wide bandgap materials and devices have been going on for many years. The properties of these materials are very exciting to designers because wide band gap devices promise

Contextual Info: "Developed for EDN. For more related features, blogs and insight from the EE community, go to www.EDN.com" High-Voltage Silicon MOSFETs, GaN, and SiC: All have a place Philip Zuk, Director of Market Development, High-Voltage MOSFET Group, Vishay Siliconix

MGCF21

Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
Contextual Info: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount

Contextual Info: User's Guide SNVA625A – January 2012 – Revised May 2013 AN-2206 LM5114 Evaluation Board 1 Introduction The LM5114 is a single low-side gate driver with 7.6A/1.3A peak sink/source drive current capability. It can be used to drive standard Si MOSFETs or enhancement mode GaN FETs in boost type configurations

CGH35015

Abstract: energy efficient wide bandgap devices 12 VOLTS INVERTER CIRCUIT USING MOSFET Infineon CoolMOS SMPS CIRCUIT DIAGRAM USING TRANSISTORS HEMT difference between IGBT and MOSFET IN inverter SMPS research paper High Voltage RF LDMOS Technology for Broadcast Applications SiC MOSFET
Contextual Info: Energy Efficient Wide Bandgap Devices John W. Palmour Cree, Inc., 4600 Silicon Dr., Durham, NC, 27703, USA Abstract. As wide bandgap devices begin to become commercially available, it is becoming clear that electrical efficiency improvement is one of the key drivers for their adoption. For RF

MOSFET P-channel SOT-23-6

Abstract: cl5000 transistor EP 430 LM5114
Contextual Info: LM5114 Single 7.6A Peak Current Low-Side Gate Driver General Description Features The LM5114 is designed to drive low-side MOSFETs in boost type configurations or to drive secondary synchronous MOSFETs in isolated topologies. With strong sink current capability, the LM5114 can drive multiple FETs in parallel. The

4G base station power amplifier

Contextual Info: Virtuous impact of higher RF PA efficiency Circle of Green Rev. 2 — 5 July 2012 White paper Document information Info Content Author s Maury Wood – Program Manager, Operator marketing, NXP Semiconductors. The author acknowledges the contribution of the following NXP innovators who

Texas Instruments Power of GaN

Abstract: Texas Instruments GaN "gallium nitride" mosfet
Contextual Info: LM5114 Single 7.6A Peak Current Low-Side Gate Driver General Description Features The LM5114 is designed to drive low-side MOSFETs in boost type configurations or to drive secondary synchronous MOSFETs in isolated topologies. With strong sink current capability, the LM5114 can drive multiple FETs in parallel. The

OPT05

Abstract: 1000 watt mosfet power amplifier 1094/BBM2E3KKO 300 watt mosfet amplifier
Contextual Info: As appearing in Microwave Journal, Microwaves & RF and Microwave Product Digest 2008 Rev. 09/08 Empower RF Systems, Inc. ¬ Empower RF Systems, Inc. 316 West Florence Ave. Inglewood, CA 90301 Phone: +1 310 412-8100 Fax: +1 (310) 412-9232 Email: sales@empowerrf.com

MAX5048

Contextual Info: LM5114 Single 7.6A Peak Current Low-Side Gate Driver General Description Features The LM5114 is designed to drive low-side MOSFETs in boost type configurations or to drive secondary synchronous MOSFETs in isolated topologies. With strong sink current capability, the LM5114 can drive multiple FETs in parallel. The

208 SOT-23-6

Abstract: MOSFET P-channel SOT-23-6 sot23 Flyback Converter
Contextual Info: LM5114 Single 7.6A Peak Current Low-Side Gate Driver General Description Features The LM5114 is designed to drive low-side MOSFETs in boost type configurations or to drive secondary synchronous MOSFETs in isolated topologies. With strong sink current capability, the LM5114 can drive multiple FETs in parallel. The

Contextual Info: polyfet rf devices F1260 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1“ process features gold metal for greatly extended

Contextual Info: polyfet rf devices F1207 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended

Contextual Info: polyfet rf devices F1006 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" *"* process features gold metal for greatly extended

Contextual Info: polyfet rf devices F1014 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET fiP PACKAGE Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "PolyfetMtm process features gold metal for greatly extended