GALLIUM ARSENIDE IR DETECTOR Search Results

Contextual Info: 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS FOD817 Series DESCRIPTION The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. FEATURES 4 • Applicable to Pb-free IR reflow soldering

phototransistor 3 pin

Abstract: FOD817 t-1 ir phototransistor 3 pin phototransistor 4 pin phototransistor dual Phototransistor OPTOCOUPLERs MARKING CODE FOD817A FOD817B FOD817C
Contextual Info: 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS FOD817 Series DESCRIPTION The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. FEATURES 4 • Applicable to Pb-free IR reflow soldering

cqy 17

Abstract: INFRARED DIODES CQY 40 IR array
Contextual Info: These components are RoHS compliant Pb SSA-005-2 Miniature IR Array SSA-005-2 is an eight element array of silicon phototransistors or gallium arsenide infrared emitters in a polycarbonate housing. It is supplied with either wide angle flat-lensed or narrow

Contextual Info: SSA-005-2 Miniature IR Array SSA-005-2 is an eight element array of silicon phototransistors or gallium arsenide infrared emitters in a polycarbonate housing. It is supplied with either wide angle flat-lensed or narrow angle components. All leads fit an 0.1”

infrared burglar alarm

Abstract: 1R333 infrared burglar alarm of remote control IR333 IR204 GALLIUM ARSENIDE ir detector IR204/IR333
Contextual Info: EVERLIGHT ELECT RONICS EH ì> 3 M1 5 7 D 3 DODOQOb □ H E V E C m INFRARED EMiniNG DIODES INFRARED EMTTING DIODES MODEL: IR 20 4/IR 3 33 GENERAL DESCRIPTION The IR204 and IR333 are high power solution grown Epitaxial Gallium Arsenide In­ frared Emitting Diodes encapsulated in blue transparent plastic T-t or T-13/<

SIECOR Fiber Optic cable

Abstract: Siecor M07A C86009E S40S C86008E GALLIUM ARSENIDE ir detector DDGDD17
Contextual Info: E 6 & G/CANADA/O PTOELEK 10E » • 3D 30tL0 0DÛ0D17 4 »CANA •/ - if./ - O ' T ' C86008E, C86009E Infrared Emitters Developmental Types 820 nm High-Speed Gallium Aluminum Arsenide IR Emitters With Integral Fiber Optic Ouput Cable and Connector ■ For Continuous DC or Pulsed Operation

Contextual Info: i 6 /CANADA/0PT0ELEK 10E 1 • 30 3 D b l 0 DD00017 4 « C A N A ‘ C86008E, G86009E Infrared Emitters Developmental Types 820 nm High-Speed Gallium Aluminum Arsenide IR Emitters With Integral Fiber Optic Ouput Cable and Connector For Continuous DC or Pulsed Operation

SIR34ST3

Contextual Info: MDE D ROHM CO LTD • 7020^*1 GOGbflb? 4 ■ RHM Page lu n ir n Specification Products Type [ ol ^ SIR-34ST3 SIR-34ST3 GaAs INFRARED EMITTING DIODE The SIR-34ST3 is a gallium arsenide infrared diode with transparent plastic encapsulation. The device is designed to accomodate needs of optical remote control

Contextual Info: T O SH IB A TLP594G TENTATIVE TOSHIBA PHOTOCOUPLER T I P R Q PHOTO RELAY J f i MODEMS PBXes TFI FrO M M lIN ir A T I DNS The TOSHIBA TLP594G consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a DIP DIP6 , which is suitable for equipment for high tech

H11LI

Abstract: 730c-04 11L2
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA & <D ® BS SEM KO NEM KO BAST TO <a ® VOE UL CSA sen DEM KO H11L1* [IF on = 1.6 m A Max] H11L2 6-Pin DIP Optoisolators Logic Output (IF(on) = 10 m A Max] *Motorola Preferred Device ST Y L E 5 P LA ST IC The H11L1 and H 1 1L2 have a gallium arsenide IR E D optically coupled to a high-speed

Contextual Info: 1 40E D B 34T^73fi 0001116 2 B S E N I FASCO INDS/ SENISYS V_^ t“~M-~l LED Chips To complement its broad range of both custom and stock detectors Clairex offers a complete line of LED discrete chips. Clairex offers Gallium Phosphide GaP chips which emit red visible light and Gallium

CLCLL2011

Abstract: LED 700 nm lr 014 CLCLL2041 CLCLL208 IR LED 940 nm
Contextual Info: MOE » B 34^730 FASCO 0001116 2 l^SENI INDS/ S E N I S Y S l-M-"] LED Chips To complement its broad range of both custom and stock detectors Clairex offers a complete line of LED discrete chips. C lairex offers Gallium Phosphide GaP chips which em it red visible light and Gallium

L 3005 TRANSISTOR

Abstract: transistor 3005 2 transistor 3005 SI 3102 v NPN 200 VOLTS POWER TRANSISTOR photon coupled interrupter nte 3100 npn PHOTO GAP DETECTOR
Contextual Info: typical NTE Type Number Description Typical Peak Emission Wavelength nm Typical Response Time (ns) Diagram Number Total External Radiated Power (mW) Po VF Vr If Pd Xp ton, toff 550|iW 1.5 3 50 75 900 10 Maximum Forward Voltage (Volts) Reverse Voltage (Volts)

TRANSISTOR 2SC 950

Abstract: phototransistor npn NPN Transistor 5V DARLINGTON transistor 2sc nte 3122 SI 3105 A
Contextual Info: INFRARED EMITTING DIODES NTE Type Number Description Diagram Number typical Total External Radiated Power mW Maximum Forward Voltage (Volta) VF 1.28 Vr 141 Po 15 Typical Peak Emission Wove length DC Forward Current (mA) Power Dlaalpatlon (mW) 6 If 100 Pd

Opto Coupler 4N36

Abstract: MOC207R1-M MOTOROLA Cross Reference Search H11D1M E90700 motorola 4N35 opto - coupler MOC206 "cross reference" Surface wave coupler 4N33 "cross reference" MOC205-M
Contextual Info: Transistor Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounting.

Contextual Info: IR Emitter and Detector Product Data Sheet LTE-209 Spec No.：DS-50-92-0001 Effective Date: 02/09/2001 Revision: C LITE-ON ENG 03/14/2014 PRELIMINARY LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.

Contextual Info: IR Emitter and Detector Product Data Sheet LTE-209C Spec No.: DS-50-92-0002 Effective Date: 02/09/2001 Revision: C LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.

Contextual Info: IR Emitter and Detector Product Data Sheet LTE-2872U Spec No.: DS-50-93-0018 Effective Date: 09/18/2010 Revision: B LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.

216 OPTO SO8

Abstract: MOC216R1 motorola 4n35 Dual opto coupler IC SOIC 8 footprint MOC3052M MOC215/buy/GDZ4.3BD5 H11AA4M H11G2M MOC3081M
Contextual Info: Transistor Output Low Input Current These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density

H11D1M

Abstract: Dual opto coupler IC MOC3023-M 4N26-M MOC306 MOTOROLA Cross Reference Search H11AA4M 4N32M MOC8050M MOC223M
Contextual Info: Transistor Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounting.

NTE3086

Contextual Info: NTE3086 Optoisolator Dual NPN Transistor Output Description: The NTE3086 is a standard dual optocoupler consisting of a GaAs Infrared LED and a silicon phototransistor per channel. This device is constructed with a high voltage insulation, double molded packaging process which offers 7.5KV withstand test capability.

H11AV1

Abstract: H11AV2 H11AV1A H11AV2A H11AV1M
Contextual Info: H11AV1,A H11AV2,A GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V BR CEO Minimum

4pin opto isolator 610-2

Abstract: 307-064 4pin opto isolator 308-613 4-pin optoisolator 307064 SFH610-2 BZX61 ISO74 dual channel opto triac
Contextual Info: Issued November 1994 F18512 Transistor/Darlington opto-isolators A comprehensive range of 'general purpose' opto-isolators which consist of a light emitting diode coupled to a silicon phototransistor. The range comprises the following, and offers variations on Isolation Voltage, Current transfer ratio,

H11AV2

Abstract: H11AV1A H11AV1M
Contextual Info: H11AV1,A H11AV2,A GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V BR CEO Minimum