GAH 3 Search Results

PDP-11

Abstract: PDP11
Contextual Info: r PRODUCT NUMBER SEE NOTE 1 • 9 « I 1 I 2 1 •*¡673 [17.09h .585 [14.87] Li _L NOTE 5 REF 1 mat'I. code NOTE 3 Itr ecn no dr tolerances unless otherwise specified date A V22185 B V40259 V41237 V901S8 V92856 RDS 5 /1 1 /9 2 PDP 1 /1 4 /9 4 GAH 8 /1 7 /9 4

155915

Abstract: 50763
Contextual Info: r PRODUCT NUMBER SEE NOTE i l ; « * í i i i * « U. n . ìli i Ï * i ! * * •4 l!» MM í i ¡ Ig $ “ FF TT ~ ü L -r 1 NOTE 5 REF. T- I* * s I i ü . i ! í i mat'l. code NOTE 3 dr Itr een no * ?» A ? 11 V40701 PDP B V40941 PDP \h C V41072 GAH

BDAA876

Contextual Info: 97.0-7 <:=:2BC@6 9:89 ?>E6@ @6;2F 7JGTURJS U gah=/ 6;7>75FD;5 EFD7@9F: u;>7 |Aamtdfghdj \47FI77@ 5A;> 3@6 5A@F35FE] D 5 6 U w73HK >A36 GB FA iehc/p U x673> 8AD ?AFAD EI;F5:;@9 u;>7 |Aam gccegdge U ~rq [ *r >3KAGFE U t@H;DA@?7@F3> 8D;7@6>K BDA6G5F \+Aw, 5A?B>;3@F]

6BH7

Abstract: DCWM PR78A 91AB A13A 74g4f diac 8 v 6b p 94 8a7l 6bfp
Contextual Info: 86.-/6 \y+2`dceu] ;9<91AB?5 8978 >=D5? ?5:1E 6IFSTQIR W gah>0 7<8?86GE<6 FGE8A:G; u<?8 }Bamtdfghdj \58GJ88A 6B<? 4A7 6BAG46GF] W w84IL ?B47 HC GB hccc0p W x784? 9BE @BGBE FJ<G6;<A: u<?8 }Bam,llffkcj W 1<G;FG4A7 <AEHF; 6HEE8AG B9 kcp W *rq [ +r ?4LBHGF 4I4<?45?8

47056

Contextual Info: SKiiP 29AHB08V1 Absolute Maximum Ratings Symbol Conditions IGBT - Chopper -%1  8 -%1  . /0    #    . )( 45+6 /  . )( 45+6 /0 # 9 7 3 ; Values Units &+ 7(+ 477'6 '+ 4)&6 : 7(   - < =+ $$$ > 7(+ / 775 4@&6 )'= 475)6

Contextual Info: SKM25GAH125D Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 39 A Tc = 80 °C 27 A 25 A ICnom ICRM SEMITRANS 6 IGBT Modules SKM25GAH125D tpsc Tj ICRM = 2xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V

Contextual Info: VD 3 O'V O SEE NOTE 5 RETAINER <A - O M o 19.90 TOP S U R F A C E OF DA U GH T E R CA RD « — u -O -^ U t_ o •> — w - O — O V V i - ' — W l> T3 <= •— 1. 60-1 I50X ]] E E o. o i o ° I— V •— Q_ < 1 9X TOP S U R F A C E OF MOT HER BOARD

Contextual Info: SKM25GAH125D Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 39 A Tc = 80 °C 27 A 25 A ICnom ICRM SEMITRANS 6 IGBT Modules ICRM = 2xICnom 50 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25 °C

GAH 3

Contextual Info: " n 1I 2 PROOUCT NO. n w j i j i M M L VACUUM P IC K -U P ZONE SEE TABLE 5. BO [0 .2 2 0 ] 3.81 14 .47 [0 .5 7 0 ] [0 .1 5 0 ] 1 1 .4 3 [0 .4 5 0 ] 15 .09 [ 0 .5 9 4 ] r 1 4 .1 0 [0 .5 5 5 ] 5 .7 2 10.B4 [ 0 .4 2 7 ] [0 .2 2 5 ] 2 .0 4 [0 .0 8 0 ] 1 TYP I c

V90000

Contextual Info: r PRODUCT NUMBER SEE NOTE 1 DIM "B” • W— r i H íífc. * HoH□H r w j t i 1 X 0.100 [2 .5 4 ] 4X X * 1 n e Il « *ÏH i i i i ■f ■ W \ U M ftÉ 4M « > J NOTE 7 i i î fMM. is II J DIM "A " ± .0 1 0 [.2 5 ] -D IM C 5 3X— - ï lit .51 [1 3 .0 ]

BERG 65057

Abstract: 65057 94V-0 CR-2
Contextual Info: r 1 PRODUCT NO. PUSH TO INSTALL SEE TABLE HAND TDDL HT-80 i 9 MSi TP T EST LATCH *i R ET EN T IO N . it S E E NOTE 3 Hi i s jj ♦* 8i !ie |;{ FIGURE 2 FIGURE 1 |»1 II NOTES: TO REMOVE TER M IN AL l i H S ill DIM A • 3. TO LATCH TERMINAL PUSH AS SHOWN IN

Contextual Info: J U S ! , " 11 i PRODUCT NO NUMBER OF POS. 9 2 2 5 0 -X B 0 92250-X 8 6 9 2 2 5 0 -X B 4 LOADED POSITION ALL POS. 2,3,4.5,6,7 i ULTRASONIC WELD AREA .p o s e P.Q S . 2 . POS B P Q S 5. 3,4,5,6 POS A PQS 3 PQS 2 PQS 1 15 .24Í 0.10 MOO JACK ASS’Y POS. NO. CONFIGURATION

Contextual Info: r PRODUCT NO. PUSH TP SEE TABLE HAND TOOL H T -8 0 INSTALL □□□□□□□□□□ 1 11 V 'U i □□□ndonnnti . i Ï Î il « i <« CORING CAVITY OPTIONALNOTE 7 lì ! flI * 8S FIGURE I 8- 1 FIGURE 2 S * 8I lb : t * NOTES: t * I* • m TP REMOVE TERMINAL

112190

Abstract: es0001
Contextual Info: P A R T NO. 2 P 2 0 0 3 NOTES: I. MATERIALS: - TT PLUG ASSEMBLY: BRASS, UNPLATED 0. I 0 0 D I A REF 0.244DIA REF t CUSTOMER CAD/CAM CUSTOMER: 0.088 REF ☆ COMPONENT STAR SYMBOL DENOTES CRITICAL SEE S/C E N G I N E E R I N G S T A N D A R D UNLESS OTHERWISE

Contextual Info: r PRODUCT NUMBER SEE SHEET 2 0.038 [.9 7 ] REF TYP I 0.1OO [2 .5 4 ] THRU, 2X 1.0 1 0 /.2 5 I A © I B I c l T fc K“ f l ì * Mh « * * *-i l*d ¡ i ! .275 [6 .9 8 ] -.5 8 5 [1 4 .8 6 ] REF. J Ll € 7 \ .002:1 -B - ïïm J L TìflT TT TTT i i .462 [1 1 .7 3 ] REF.

"IGBT h-bridge"

Contextual Info: SENSITRON SEMICONDUCTOR MOD1004 TECHNICAL DATA DATA SHEET 1125, REV. 12 1 2 3 4 5 11 10 9 8 7 6 600 VOLT, 40 AMP IGBT H-BRIDGE ELECTRICAL CHARACTERISTICS PER IGBT DEVICE PARAMETER Tj=250C UNLESS OTHERWISE SPECIFIED SYMBOL MIN TYP MAX UNIT 600 - - V - - 40

MOD1013

Abstract: IGBT 500V 35A
Contextual Info: tSENSITRON MOD1013 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2025, REV. 12 11 10 9 8 1 2 7 3 4 5 6 600 VOLT, 24 AMP IGBT 3-PHASE BRIDGE ELECTRICAL CHARACTERISTICS PER IGBT DEVICE PARAMETER Tj=250C UNLESS OTHERWISE SPECIFIED SYMBOL MIN TYP MAX UNIT 600 - -

Contextual Info: 3 PRODUCT NUMBER SEE SHEET 2 -.485 [1 2 .3 2 ] REF. £7 .002:1 TTt t t +t t TT+TT .462 [1 1 .7 3 ] -B-I rIi i r f REF. q ir L •nr CONFIDENTIAL mat'l. code NOTE 3 dr Itr sheet index tolerances unless otherwise specified date 1 0 /2 4 /9 1 V12 79 5 ROS V20224

Contextual Info: P A R T NO. 4 I I NOTES: I. ALL PARTS SHIPPED c UNASSEMBLED. AAA A A!1_L A. V'VVVV l ! T frlii I @ I REF 1 3 M 6 4 2 / 9 - I - [ 3 “ 3/16" REF 0.250 0.626 1 REF @ I . 209 REF (CUSTOMER DRAWING) 3. 5 9 5 CAD/CAM REF DWG. NO. 4 1 I_C D M A T E R IA L

Contextual Info: SN Al 37 S E R I ES' •CIRCUITRY I - SCHEMATIC 1 0 . 3 7 5 PLUG' T O PC B O A R D HEIGHT ■IN S U L A T E D NON-THREADED B U S H I NG SCHEMATIC I S C H E M A T 1C III 2k - 2B - SCHEMATIC IV 4B - SCHEMATIC XI I SCHEMATIC IV S C H E M A T I C REF X II SCHEMATIC

50435

Contextual Info: r PRODUCT NUMBER SEE SHEET 2 *C I3 -U N f l | * S’ <i u Z El i 5«M * I ¥ i l l l i ­ bs ; i ! 3 Ii t£ K J Ll *!i n «I si a ç * ! C O N FID E N TIA L mat'l. code NOTE 3 dr Itr ecn no “ 54 11* ! i ! B L linear RDS 1 0 /2 4 /9 1 V20224 MRC 3 /2 /9 2

V61331

Contextual Info: r PR O D UC T NUMBER SEE NOTE 1 . ? 4$ « Í «i l i Vi f - * 8 sis 1 11 lit ft • N« h r ¿«I h . I}? : s? s It A 0.1OO [2 .5 4 ] 2X . 72 [1 8 .3 ] — u L r 1_ I 1 r \ :]r .3 6 0 [9 .1 4 ] .3 8 6 [9 .8 0 ] 1 Í T i“=Lr . NOTE 5 7 I— ï ¿ # í

diode b1c

Contextual Info: SK 80 MBBB 055 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET G<BB GQBB T< T<D ?- K PM N$I 407,- %*8,23.-, -', .6.,+ ?- K PM ;LS> N$U V> *' Y V &-U ?- K PM ;LS> N$U ?¥ Inverse diode SEMITOP 3 MOSFET Module T_ K @ T< T_D K @ T<D ?- K PM ;LS> N$U

Contextual Info: r PRODUCT NUMBER SEE NOTE 1 •DIM ”B”± .0 0 5 n X w u- 0.1050 [2.667] 4X i i «i I » u TtTtffît itîîîfl^ fô p m iftT ffîT t immmn .3 2 0 [ 8 .1 3 ] i «!* S Ö8 ¡ L C •§ Ü S ï «- i'j til I" I! I* • ? ïü t « u ; n i - • ìli ie fj