GAAS MESFET LIST Search Results

3906 PNP TRANSISTOR

Abstract: irlml6401tr LMK316BJ475KL MAX881 AN-0002 MAX881R RFS1003 RFS1006 AN0002 "Dual PNP Transistor" temperature compensation
Contextual Info: MESFET Amplifier Biasing AN-0002 Biasing Circuits and Considerations for GaAs MESFET Power Amplifiers Summary In order to properly use any amplifier it is necessary to provide the correct operating environment, especially the DC bias. This application note outlines some of the considerations for biasing MESFET

Contextual Info: S510065-55Z S510065-55Z CATV Out-OfBand Tuner CATV OUT-OF-BAND TUNER Package: QFN 28 Product Description Features 28 GaAs HBT GaAs MESFET GND InGaP HBT NC SiGe BiCMOS NC Si BiCMOS  SiGe HBT GND GaAs pHEMT GND Si CMOS Vdd Si BJT GND GaN HEMT 27 26 25 24

MRF9820T1

Abstract: 16 SOT-143 MOTOROLA
Contextual Info: MOTOROLA Order this document by MRF9820T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line GaAs MESFET AGC Amplifier MRF9820T1 The MRF9820T1 is a high performance GaAs AGC amplifier suitable for use in low noise front end amplifier or downconverter applications. The device

S5100

Abstract: X6959M HZ0603 hz0603b102 epcos EC 90 11 O 97ag
Contextual Info: S510065-55Z S510065-55Z CATV Out-OfBand Tuner CATV OUT-OF-BAND TUNER Package: QFN 28 Product Description Features 28 GaAs HBT GaAs MESFET GND InGaP HBT NC SiGe BiCMOS NC Si BiCMOS SiGe HBT GND GaAs pHEMT GND Si CMOS Vdd Si BJT GND GaN HEMT 27 26 25 24 23 GND VID

MESFET Application

Contextual Info: Broadband Standard Product AT0000601-20 GaAs Step Attenuator DC - 6GHz Single Bit, 0/20dB using MESFET Elements February 11, 2009 Preliminary www.aeroflex.com/bband DESCRIPTION FEATURES The AT0000601-20 is a single bit, 0/20 dB high linearity solid state step attenuator using Agilent Technologies GaAs technology. It

ATF54143.s2p

Abstract: 5988-2336EN transistor C610 5989-0034EN TOKO LL1608-FSR15 ATF-54143 ATF54143 atf54143 pHEMT AN-1222 BCV62C
Contextual Info: A 100 MHz to 500 MHz Low Noise Feedback Amplifier using ATF-54143 Application Note 5057 Introduction In the last few years the leading technology in the area of low noise amplifier design has been gallium arsenide GaAs devices, MESFET and pHEMT. Power amplifiers based on GaAs can achieve high efficiency

752 J 1600 V CAPACITOR

Abstract: RF MESFET S parameters MESFET S parameter network resistor P0* RF SOT89 752 C 1600 V CAPACITOR
Contextual Info: TRF7000 POWER GaAs MESFET ^ _ SLW S027-JULY 1996 • 3.6-V and 4.8-V Operating Voltage for AMPS/NADC and GSM Cellular Telephone Applications Respectively • High Power Efficiency - at 35 dBm Output Power, 53% PAE Typical

TQP200002

Abstract: TQP200002 ESD Protection Device
Contextual Info: TQP200002 Advanced Data Sheet ESD Protection device Applications: Description: The TQP200002 ESD protection device is fabricated in GaAs MESFET technology and has been especially developed for high frequency applications. It delivers bidirectional protection with very low leakage currents

SGF32

Abstract: U 821 B
Contextual Info: Ordering number : ENN7195A SGF32 N-Channel GaAs MESFET SGF32 For C to Ku-Band Local Oscillator and Amplifier Features • • • • Package Dimensions Lower Phase Noise. Highly reliable protection film. Automatic surface mounting supported. MCPH4 package.

hp 1458

Abstract: SGF33 3048A sb wa 340
Contextual Info: Ordering number : ENN7196A SGF33 N-Channel GaAs MESFET SGF33 For C to Ku-Band Local Oscillator and Amplifier Features • • • • Package Dimensions Low phase noise. Highly reliable protection film. Automatic surface mounting supported. MCPH4 package.

SGF32

Abstract: Mason Company
Contextual Info: Ordering number : ENN7195 SGF32 N-Channel GaAs MESFET SGF32 For C to Ku-Band Local Oscillator and Amplifier Features • • • • Package Dimensions Lower Phase Noise. Highly reliable protection film. Automatic surface mounting supported. MCPH4 package.

TQP200002

Abstract: TQP200002 ESD Protection Device
Contextual Info: TQP200002 Advanced Data Sheet ESD Protection device Applications: Description: The TQP200002 ESD protection device is fabricated in GaAs MESFET technology and has been especially developed for high frequency applications. It delivers bidirectional protection with very low leakage currents

08GHz

Contextual Info: Ordering number:ENN2671 GaAs Dual Gate MESFET 3SK189 UHF Amplifier, Mixer Application Package Dimensions • Low noise figure : 1.2dB typ 0.8GHz . · High voltage gain : 19dB typ (0.8GHz). · Capable of being operated from low voltage ; VDS=5V. unit:mm 2046A

3SK189

Contextual Info: Ordering number:ENN2671 GaAs Dual Gate MESFET 3SK189 UHF Amplifier, Mixer Application Package Dimensions • Low noise figure : 1.2dB typ 0.8GHz . · High voltage gain : 19dB typ (0.8GHz). · Capable of being operated from low voltage ; VDS=5V. unit:mm 2046A

Contextual Info: HMC637LP5 / 637LP5E v02.0709 Amplifiers - Linear & Power - SMT 9 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC637LP5 E wideband PA is ideal for: P1dB Output Power: +29 dBm • Telecom Infrastructure Gain: 13 dB

CLX30

Abstract: CLX30-00 CLX30-05 CLX30-10
Contextual Info: CLX30 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 12.5 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application

MESFET Application

Contextual Info: HMC637LP5/637LP5E v03.1213 Amplifiers - SMT GaAs MESFET MMIC 1 WATT Power Amplifier, DC - 6 GHz Typical Applications Features The HMC637LP5 E wideband PA is ideal for: P1dB Output Power: +29 dBm • Telecom Infrastructure Gain: 13 dB • Microwave Radio & VSAT

0280 130 026

Abstract: CFY27 CFY27-38 CFY27-P CFY25-20 TBC 547 B 35 micro-X Package MARKING CODE Q
Contextual Info: CFY27 HiRel Ku-Band GaAs General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • High gain, medium power

CLX34

Abstract: CLX34-00 CLX34-05 CLX34-10
Contextual Info: CLX34 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 10 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application

CLY35

Abstract: CLY35-00 CLY35-05 CLY35-10
Contextual Info: CLY35 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 4.5 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application

Contextual Info: HMC637LP5/637LP5E v03.1213 AMPLIFIERS - SMT GAAS MESFET MMIC 1 WATT Power Amplifier, DC - 6 GHz Typical Applications Features The HMC637LP5 E wideband PA is ideal for: P1dB Output Power: +29 dBm • Telecom Infrastructure Gain: 13 dB • Microwave Radio & VSAT

CLY38

Abstract: CLY38-00 CLY38-05 CLY38-10
Contextual Info: CLY38 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 4.2 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application

CLY32

Abstract: CLY32-00 CLY32-05 CLY32-10
Contextual Info: CLY32 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 6 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application

CLX32

Abstract: CLX32-00 CLX32-05 CLX32-10
Contextual Info: CLX32 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 12.5 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application