GAAS FET MARKING B Search Results

cfy 19 siemens

Abstract: cfy 14 siemens CFY 18 siemens gaas fet CFY 19 cfy siemens cfy 25-20 cfy 25-17 Q62703-F106 CFY 10 Q62703-F108
Contextual Info: SIEMENS CFY 25 GaAs FET • • • • • Low noise High gain For front-end amplifiers ion-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel

CFY10

Abstract: siemens gaas fet CFY 10 Ga FET marking k CFY 18 cfy 14 siemens
Contextual Info: SIEMENS CFY 10 GaAs FET • Low noise • High gain • Suitable up to 14 G Hz • Ion-implanted planar structure • All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel

gaas fet marking B

Abstract: gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
Contextual Info: Marking manner of MITSUBISHI GaAs FET QL-1104E-A July/2008 [Leadless ceramic package] GD-26, 27 Terminal position (from Top View) Top View ① ② B 0 1AL B 0 1AL Electrodes direction: ① Gate ② Source ③ Drain ② ③ ① ② ③ Drain Gate Source

SMD MARKING CODE 901

Abstract: CFY 19 CFY 10 GaAs FET cfy 14
Contextual Info: GaAs FET CFY 35 Data Sheet • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel CFY 35-20 NA Q62702-F1393

GSO05553

Abstract: Q62702-F1393 Q62702-F1394 smd 3520 CFY 35-23 GaAs FET cfy 14 CFY 19 CFY 65
Contextual Info: GaAs FET CFY 35 Data Sheet • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel CFY 35-20 NA Q62702-F1393

GaAs FET cfy 19

Abstract: CFY 35-20 F1393 f1394 GSO05553 Q62702-F1393 Q62702-F1394 smd code marking 814 cfy 19
Contextual Info: GaAs FET CFY 35 Data Sheet • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel CFY 35-20 NA Q62702-F1393

Contextual Info: SIEMENS CFY 35 GaAs FET Features • Low noise • High gain • Fo r lo w -noise front end am plifiers • Fo r D B S dow n co nverters 5:1 E S D : E le c tro sta tic d is c h a rg e se n sitive de v ice , o b se rv e handling pre ca utio ns! Type Marking

NEC Ga FET marking L

Abstract: tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a
Contextual Info: GET-30749, Revision C NEC NEC Corporation Tamagawa Plant 1753,Shimonumabe, Nakahara-lcu, Kawasaki, Kanagawa, 211-8666 Specification Control Drawing o f Grade L GaAs Devices fo r Satellite Applications Prepared on: September 28,2000 Prepared by: Masahito Kushima

h216

Abstract: HMC216MS8E HMC216MS8 gaas fet marking a 216MS8E gaas fet marking C gaas fet marking
Contextual Info: HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Features The HMC216MS8 / HMC216MS8E is ideal for: Input IP3: +25 dBm @ +11 dBm LO • Base Stations LO Range = +3 to +11 dBm • WirelessLAN Conversion Loss: 8.5 dB • PCMCIA

HMC216MS8

Abstract: h216
Contextual Info: HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Typical Applications Features The HMC216MS8 / HMC216MS8E is ideal for: IP3 Input : +25 dBm @ +11 dBm LO • Base Stations LO Range = +3 to +11 dBm • WirelessLAN Conversion Loss: 8.5 dB

H216

Abstract: HMC216MS8 gaas fet marking a marking c gaas fet 216MS8E HMC216MS8E
Contextual Info: HMC216MS8 / 216MS8E v02.0705 7 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Typical Applications Features The HMC216MS8 / HMC216MS8E is ideal for: IP3 Input : +25 dBm @ +11 dBm LO • Base Stations LO Range = +3 to +11 dBm • WirelessLAN Conversion Loss: 8.5 dB

Q62702-L90

Abstract: marking K gaas fet gaas fet marking a gaas fet marking C
Contextual Info: CLY 5 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 % ESD: Electrostatic discharge sensitive device,

gaas fet marking B

Abstract: FET GAAS marking a PS720C
Contextual Info: Solid State Relay OCMOS FET PS720C-1A 4-PIN SOP, 0.1  LOW ON-STATE RESISTANCE 60 V BREAK DOWN VOLTAGE NEPOC 1.25 A CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET Series DESCRIPTION The PS720C-1A is a low on-state resistance solid state relay containing a GaAs LED on the input side and MOS

Siemens A 1458

Abstract: FET marking code 365
Contextual Info: SIEMENS CLY15 GaAs FET Datasheet * Power am plifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz 'O p e ra tin g voltage range: 2.7 to 6 V * P ^ at V 0=3V, f= 1.8 GHz typ. 31.5 dBm * Efficiency better 50% s s ~ /7 / d ^ ESD: G Electrostatic discharge sensitive device,

CLY10

Contextual Info: SIEMENS CLY10 GaAs FET D a t a s h e e t * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * P „1Tat Vn=3V, f=1,8GHz 28.5 dBm typ. * High efficiency better 55 % 3 p k S 2 1 ESD: V PSC5 I6 J

Q62702-L96

Contextual Info: CLY 2 GaAs FET Datasheet 4 * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * POUT at VD=3V, f=1.8GHz typ. 23.5 dBm * High efficiency better 55 % 5 6 3 2 ESD: Type CLY 2 Electrostatic discharge sensitive device,

siemens gaas fet

Abstract: TMS 1600 marking S221
Contextual Info: SIEMENS GaAs FET CLY 2 Datasheet * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * P at V0=3V, f=1.8GHz typ. 23.5 dBm * High efficiency better 55 % out ESD: Type CLY 2 Electrostatic discharge sensitive device,

HMC216MS8

Contextual Info: HMC216MS8 / 216MS8E v02.0705 10 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz D E U N I T N O T C C S U I D D O PR Typical Applications Features The HMC216MS8 / HMC216MS8E is ideal for: Input IP3: +25 dBm @ +11 dBm LO • Base Stations LO Range = +3 to +11 dBm

siemens gaas fet

Abstract: gaas fet marking J
Contextual Info: SIEMENS CLY 5 GaAs FET D a t a s h e e t * Pow er amplifier for mobile phones * For frequencies from 400 M H z to 2.5 G H z * W ide operating voltage range: 2.7 to 6 V * at V 0=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 % X 2 1 ESD: V P S0S163

Contextual Info: < Power GaAs FET > MGF1952A Leadless ceramic package DESCRIPTION The MGF1952A power MES FET is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing FEATURES High gain and High P1dB

NEC Relay Date Codes

Abstract: FET marking codes NEC MARKING codes nec gaas fet marking
Contextual Info: DATA SHEET Solid State Relay OCMOS FET PS7241-2B 8-PIN SOP, 400 V BREAK DOWN VOLTAGE NORMALLY CLOSE TYPE 2-ch Optical Coupled MOS FET DESCRIPTION The PS7241-2B is a solid state relay containing GaAs LEDs on the light emitting side input side and normally

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD L8001 Preliminary CMOS IC FET BIAS CONTROLLER  DESCRIPTION The UTC L8001 is specially designed integrated circuit for satellite receiver front-end block. It provides stable drain and gate bias conditions for GaAs or HEMT FETs.

gaas fet marking

Contextual Info: A Business Partner of Renesas Electronics Corporation. PS7904-1A OCMOS FET Preliminary Data Sheet Specifications in this document are tentative and subject to change. 4-PIN SMALL FLAT-LEAD, LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET Mar 7, 2012 DESCRIPTION

gaas fet micro-X Package marking

Abstract: gaas fet micro-X Package gaas fet marking gaas fet micro-X micro-X ceramic Package marking 133 micro-x 133 marking Micro-X
Contextual Info: < Power GaAs FET > MGF1451A Micro-X ceramic package DESCRIPTION The MGF1451A power GaAs MES FETis designed for use in S to Ku band amplifiers. Outline Drawing FEATURES High gain and High P1dB Glp=10.5dB , P1dB=13dBm Typ. @ f=12GHz APPLICATION Fig.1 S to Ku band low noise amplifiers