GAAS ARRAY, 850NM Search Results

Contextual Info: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRELIMINARY KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes

VCSEL array, 850nm flip

Abstract: VCSEL array, 850nm, flip chip amplifier CV 203 VCSEL array, 850nm GaAs array, 850nm PIN photodiode 850nm LX3044 LX3045 LX3046 PIN PHOTO DIODE
Contextual Info: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRELIMINARY KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes

amplifier CV 203

Abstract: VCSEL array, 850nm flip GaAs array, 850nm vcsel array Photo Diode
Contextual Info: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRELIMINARY KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes

VCSEL array, 850nm flip

Contextual Info: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRELIMINARY KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes

GaAs array, 850nm

Abstract: PIN photodiode 850nm TPA-8D04-005
Contextual Info: TPA-8D04-005 GaAs PIN photodiode array FEATURES: • 1x4 array bar with 250 um pitch • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL MIN TYP R ID VBD C BW 0.5 0.55 0.2

amplifier CV 203

Abstract: VCSEL array, 850nm flip GaAs array, 850nm diode array die VCSEL array, 850nm, flip chip
Contextual Info: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRODUCT SPECIFICATION KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes

CV 203 5 pin

Abstract: GaAs array, 850nm PIN photodiode 850nm TPA-8D04-003 PIN photodiode chip 850nm TPA photodiode
Contextual Info: TPA-8D04-003 GaAs PIN photodiode array FEATURES: •1x4 array bar with 250 um pitch. • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL MIN TYP R RS ∆R ID VBD C TR/TF 0.50

VCSEL array common anode

Abstract: HFD8104-101 HFD8112-101 VCSEL die bonding
Contextual Info: Fiber Optic Products PIN Array FEATURES • High Bandwidth • Large Active Area • Low capacitance • 4 and 12 channel arrays HFD81xx-101 Preliminary The HFD81xx-101 is a high performance GaAs PIN detector array die ideal for use in manufacturing transceivers for parallel optical

VCSEL array, 850nm

Abstract: GaAs array, 850nm LX3044 LX3044-TR LX3045 LX3046 VCSEL array, 850nm flip
Contextual Info: Obsolete Product – Not Recommended For New Design LX3044 / 45 / 46 I N T E G R A T E D 10.3 Gbps Coplanar GaAs PIN Photo Diode P R O D U C T S P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION LX3044 Single Die LX3045, 1x4 Array Die LX3046, 1x12 Array Die

GaAs array, 850nm

Abstract: diode array die
Contextual Info: AXT PRODUCT INFORMATION Standard 1~4 Gbps GaAs PIN Photodiodes Array Part number: PX-CKmn mxn array available m,n=1,2,3.9,A,B,C,D,… Features: • • • • • • 1-4 Gbps operation at –3 to 0 V Two top side wire-bond pads extremely low dark current, capacitance, and excellent responsivity

amplifier CV 203

Abstract: VCSEL array, 850nm flip VCSEL array, 850nm, flip chip VCSEL array, 850nm LX3045 LX3044 LX3046 LX304X 75um
Contextual Info: LX3044 / 45 / 46 I N T E G R A T E D 10.3 Gbps Coplanar GaAs PIN Photo Diode P R O D U C T S P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION LX3044 Single Die LX3045, 1x4 Array Die LX3046, 1x12 Array Die Coplanar Waveguide , 50ohm High Responsivity Low Dark Current

GaAs array, 850nm

Contextual Info: LX3044 / 45 / 46 I N T E G R A T E D 10.3 Gbps Coplanar GaAs PIN Photo Diode P R O D U C T S P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION LX3044 Single Die LX3045, 1x4 Array Die LX3046, 1x12 Array Die Coplanar Waveguide , 50ohm High Responsivity Low Dark Current

VCSEL array, 850nm flip

Abstract: LX3046 amplifier CV 203
Contextual Info: LX3044 / 45 / 46 I N T E G R A T E D 10.3 Gbps Coplanar GaAs PIN Photo Diode P R O D U C T S P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION LX3044 Single Die LX3045, 1x4 Array Die LX3046, 1x12 Array Die Coplanar Waveguide , 50ohm High Responsivity Low Dark Current

2um ir photodiode

Abstract: construction of photo diode GaAs 10Gbps photodiode chip photo diode array MXP7A01 GaAs array, 850nm Photo Modules IR PHOTO DIODE amplifier
Contextual Info: MXP7A01 – 1x4 Array 10Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks

construction of photo diode

Abstract: photo diode array amplifier MXP7A02 GaAs array, 850nm IR PHOTO DIODE amplifier 207UM
Contextual Info: MXP7A02 – 1x4 Array 3.125 Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks

TPA photodiode

Abstract: PIN photodiode chip 850nm PIN photodiode 850nm
Contextual Info: TPA-8D04-002 GaAs PIN photodiode chip FEATURES: •1xN array bar with 250 um pitch N≥2 • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL MIN TYP R RS ∆R ID VBD C TR/TF

VCSEL die bonding

Contextual Info: InnovativeInnov Innovative VCSEL Solutions . Delivered Advanced Optical Components 2.5Gbps 850nm PIN PIN Arrays HFD8104-101, HFD8112-101 Key Features: • • • • High Bandwidth Large Active Area Low Capacitance 4 and 12 channel arrays The HFD81xx-101 is a high performance GaAs PIN detector array die ideal for use in manufacturing transceivers for parallel optical

S/LED 850nm

Contextual Info: DATA SHEET 10GBPS 850NM PIN PIN ARRAYS HFD81XX-103 FEATURES: High Bandwidth Large Active Area Low Capacitance 4 and 12 channel arrays The HFD81xx-103 are high performance GaAs PIN detector die arrays ideal for use in manufacturing transceivers for parallel optical interconnects. The arrays

850NM

Abstract: HFD8104-103 HFD8112-103 10GBPS 1550nm laser diode for 10Gbps PIN photodiode responsivity 1550nm 10Gbps GaAs array, 850nm diode array die VCSEL die TO56 package DIMENSION
Contextual Info: DATA SHEET 10GBPS 850NM PIN PIN ARRAYS HFD81XX-103 FEATURES: High Bandwidth Large Active Area Low Capacitance 4 and 12 channel arrays The HFD81xx-103 are high performance GaAs PIN detector die arrays ideal for use in manufacturing transceivers for parallel optical interconnects. The arrays

Contextual Info: DATA SHEET 850NM PIN PIN DIODE ARRAYS HFD81XX-102 FEATURES: High Bandwidth Large Active Area Low Capacitance 4 and 12 channel arrays The HFD8104-102 and HFD8112-102 are high performance GaAs PIN detector arrays ideal for use in manufacturing transceivers for parallel optical

850NM

Abstract: HFD8104-102 HFD8112-102 1310nm VCSEL transceivers VCSEL array, 850nm for fiber VCSEL die bonding
Contextual Info: DATA SHEET 850NM PIN PIN DIODE ARRAYS HFD81XX-102 FEATURES: High Bandwidth Large Active Area Low Capacitance 4 and 12 channel arrays The HFD8104-102 and HFD8112-102 are high performance GaAs PIN detector arrays ideal for use in manufacturing transceivers for parallel optical

Contextual Info: InnovativeInnov Innovative VCSEL Solutions . Delivered Advanced Optical Components 10Gbps 850nm PIN PIN Arrays PRELIMINARY HFD8104-103, HFD8112-103 Key Features: • • • • High Bandwidth Large Active Area Low Capacitance 4 and 12 channel arrays

Photodetector Array

Abstract: 860nm 20GHz Bandwidth PIN Photodetector 650NM photodetector
Contextual Info: FCI-GaAs-XXM High Speed GaAs Arrays APPLICATIONS  Fiber Optic Receiver Monitor  SM or MM Fiber Ribbon  Parallel Interconnects  DWDM FEATURES  High Speed FEATURES  High Responsivity  High Speed  Low Noise  High  Spectral Responsivity Range 900nm to 1700nm

Contextual Info: epitex Opto-Device & Custom LED 20 Elements LED array SPECIFICATION OF LED ARRAY AR850-20 [INFRARED] Specifications 1 Product Name 2) Type No. 3) Chip 1) Chip Material (2) Peak Wavelength (3) Emitting Area (4) Element Dimension (5) Chip Dimension (6) Elements Number