GAAS 850 NM INFRARED EMITTING DIODE Search Results

Infrared led 850 smd

Abstract: GaAs 850 nm Infrared Emitting Diode 850 nm Infrared Emitting Diode VCSEL array, 850nm smd plcc-2 infrared diode 850 nm Infrared Emitting Diode smd vcsel SMD INF226 infrared transistor
Contextual Info: Infrared Light Emitting Diode OP180 & OP280 Series Features: • • • • • • • High power GaAs—OP180, 940 nm center wavelength High power GaAIAs—OP280K and OP280KT, 875 nm center wavelength VCSEL GaAlAs-OP280V, 850 nm center wavelength Point Source GaAlAs-OP280PS, 850 nm center wavelength

GaAs 1000 nm Infrared Diode,

Contextual Info: GaAs infrared light-emitting diode SIR-5682ST3F This infrared GaAs LED is housed in a compact, transparent, 5 mm plastic housing. It radiates at a wavelength of 850 nm for use with most optical voice or data transmission systems. Dimensions U n its: mm Features

Contextual Info: SIR-5682ST3F GaAs infrared light-emitting diode This infrared GaAs LED is housed in a compact, transparent, 5 mm plastic housing. It radiates at a wavelength of 850 nm for use with most optical voice or data transmission systems. Dimensions U n its: mm Features

L-7113F3C

Abstract: L-7104F3C
Contextual Info: INFRARED EMITTING DIODES L-34F3C Part No. L-7104F3C Material λP nm Lens Type GaAs 940 water clear L-34F3BT GaAs 940 blue transparent L-34SF4BT L-34SF6C L-34SF6BT L-34SF7C L-34SF7BT GaAlAs GaAlAs GaAlAs GaAlAs GaAlAs GaAlAs 880 880 860 860 850 850 Po (mW/sr)

GaAs 850 nm Infrared Emitting Diode

Abstract: OP265 OP265WPS OP505 OP535
Contextual Info: Plastic Infrared Emitting Diode OP265WPS Features: • • • • • T-1 3 mm package style Broad irradiance pattern Point source with flat lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: The OP265WPS point source model is a flat-lensed 850 nm diode with a broad radiation pattern that provides

OP265FAD

Abstract: GaAs 850 nm Infrared Emitting Diode OP265 OP505 OP535 OP265FAA OP265F
Contextual Info: Plastic Infrared Emitting Diode OP265FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is

Contextual Info: Plastic Infrared Emitting Diode OP265FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is

Contextual Info: Plastic Infrared Emitting Diode OP265FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is

Contextual Info: Plastic Infrared Emitting Diode OP265FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is

Contextual Info: Plastic Infrared Emitting Diode OP266FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP266FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is

OP265

Abstract: OP265AA OP265AB OP265AC OP265AD OP505 OP535
Contextual Info: Plastic Infrared Emitting Diode OP265AA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265AA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is

Contextual Info: Plastic Infrared Emitting Diode OP265FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is

OP266

Abstract: OP506 OP535 OP266FAD OP266F
Contextual Info: Plastic Infrared Emitting Diode OP266FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP266FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is

Contextual Info: Plastic Infrared Emitting Diode OP266AA SERIES Features: • T-1 3 mm package style  Narrow irradiance pattern  Dome lens  Higher power output than GaAs at equivalent drive currents  850 nm diode Description: Each device in the OP266AA series is a high intensity gallium aluminum arsenide infrared emitting diode (GaAIAs)

BPT-BP2334

Abstract: BPT-BP2931 BPT-BP1A34 BPT-BP0334 BIR-BM13J4G BIR-BM17J4G BPD-BQA934 400-110 BPT-BP0A31 bir_nm23c2
Contextual Info: Infrared Emitting Diode End Look 2 Chip Part Number Material Wavelength p BIR-BM1331 GaAlAs/GaAs BIR-BM1331-A Lens Color V F V @ I F =50m A Ee(mW/cm ) @ I F =50m A Typ. Max. Min. Typ. 940 1.25 1.50 1.4 2.3 GaAlAs/GaAs 940 1.25 1.50 1.4 2.3 BIR-BO1331 GaAlAs/GaAlAs

Contextual Info: INFRARED EMITTING DIODES BL-L813XX-IR Features: Ø Ø Ø Ø Ø 8.0mm Round Type Infrared LED High Reliability Peak Wavelength at 940, 880, 850nm Water Clear, yellow Transparent, Blue Transparent available IC compatible /Low current capability. n Application

BL-L314IR

Contextual Info: INFRARED EMITTING DIODES BL-L314XX-IR Features: Ø Ø Ø Ø Ø 3.0mm Round Type Infrared LED High Reliability Peak Wavelength at 940, 880, 850nm Water Clear, yellow Transparent, Blue Transparent available IC compatible /Low current capability. Application

BL-L513IR

Contextual Info: INFRARED EMITTING DIODES BL-L513XX-IR Features: Ø Ø Ø Ø Ø 5.0mm Round Type Infrared LED High Reliability Peak Wavelength at 940, 880, 850nm Water Clear, yellow Transparent, Blue Transparent available IC compatible /Low current capability. Ø Ø Ø Ø

5v infrared camera

Abstract: BL-L813
Contextual Info: INFRARED EMITTING DIODES BL-L813XX-IR Features: 8.0mm Round Type Infrared LED High Reliability Peak Wavelength at 940, 880, 850nm Water Clear, yellow Transparent, Blue Transparent available IC compatible /Low current capability. Application Free air transmission system

BL-L513IRAB

Abstract: BL-L513IR BL-L513XX-IR BL-L513IRAC BL-L513IRBB infrared circuit BL-L513IRCC
Contextual Info: INFRARED EMITTING DIODES BL-L513XX-IR Features: 5.0mm Round Type Infrared LED High Reliability Peak Wavelength at 940, 880, 850nm Water Clear, yellow Transparent, Blue Transparent available IC compatible /Low current capability. Application Free air transmission system

L314XX

Abstract: BL-L314XX-IR BL-L314IRCC infrared circuit BL-L314IR
Contextual Info: INFRARED EMITTING DIODES BL-L314XX-IR Features: 3.0mm Round Type Infrared LED High Reliability Peak Wavelength at 940, 880, 850nm Water Clear, yellow Transparent, Blue Transparent available IC compatible /Low current capability. Application Free air transmission system

infrared emitting CIRCUIT

Abstract: infrared circuit diagram BL-L314IRAC BL-L314IRCB
Contextual Info: INFRARED EMITTING DIODES BL-L314XX-IR Features: Ø Ø Ø Ø Ø 3.0mm Round Type Infrared LED High Reliability Peak Wavelength at 940, 880, 850nm Water Clear, yellow Transparent, Blue Transparent available IC compatible /Low current capability. Application

GaAs 850 nm Infrared Emitting Diode

Abstract: smd diode A4 VCSEL array, 850nm 850 nm Infrared Emitting Diode smd vcsel SMD OPOP280V OP280 OP580 OP280K
Contextual Info: PLCC-2 Pkg Infrared Light Emitting Diode OP180 & OP280 Series Features: • SMD Package • High power GaAs—OP180, 940 nm typical peak wavelength • Standard GaAlAs-OP280, 890nm typical peak wavelength • High power GaAIAs—OP280K and OP280KT, 875 nm typical peakwavelength

vcsel SMD

Abstract: 850 nm Infrared Emitting Diode smd GaAs 850 nm Infrared Emitting Diode OP280V VCSEL array, 850nm OP280 OP580 OPOP280V GaAs 850 nm Infrared Emitting Diode, Range-OP180
Contextual Info: PLCC-2 Pkg Infrared Light Emitting Diode OP180 & OP280 Series Features: • SMD Package • High power GaAs—OP180, 940 nm typical peak wavelength • Standard GaAlAs-OP280, 890nm typical peak wavelength • High power GaAIAs—OP280K and OP280KT, 875 nm typical peakwavelength