Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GAAS 1040 NM Search Results

    GAAS 1040 NM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54112-110402100LF
    		Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded vertical stacked header, Through Hole, Double Row, 40 Positions, 2.54mm (0.100in) Pitch. PDF
    G832MC110403222HR
    		Amphenol Communications Solutions 0.80mm Board-to-Board 100Ω Connector, Pitch 0.8mm, Height 5.7 mm, 40 Positions, Dual Row, BTB Vertical Plug SMT, 30u\\ Gold Black. PDF
    G832MB110404122HR
    		Amphenol Communications Solutions 0.80mm Board-to-Board 85Ω Connector, Pitch 0.8mm, Height 6.7 mm, 40 Positions, Dual Row, BTB Vertical Plug SMT, 15u\\ Gold Black. PDF
    G832MB110403222HR
    		Amphenol Communications Solutions 0.80mm Board-to-Board 85Ω Connector, Pitch 0.8mm, Height 5.7 mm, 40 Positions, Dual Row, BTB Vertical Plug SMT, 30u\\ Gold Black. PDF
    G832MB010405122HR
    		Amphenol Communications Solutions 0.80mm Board-to-Board 85Ω Connector, Pitch 0.8mm, Height 7.7 mm, 40 Positions, Dual Row, BTB Vertical Receptacle SMT, 15u\\ Gold Black. PDF

    GAAS 1040 NM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    S 1040 smd

    Abstract: 1030 mhz TSML1020 TEMT1000 TSML1000 TSML1030 TSML1040
    Contextual Info: TSML1000 / 1020 / 1030 / 1040 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs TSML1000 Description TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for radiant power under pulse conditions, forward voltage


    Original     		TSML1000 TSML1000 TSML1020 TSML1030 TSML1040 TEMT1000 08-Apr-05 S 1040 smd 1030 mhz TSML1020 TEMT1000 TSML1030 TSML1040 PDF

    Photointerrupter

    Contextual Info: TSML1000/1020/1030/1040 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs TSML1000 Description TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for radiant power under pulse conditions, forward voltage


    Original     		TSML1000/1020/1030/1040 TSML1000 TSML1000 TSML1020 TSML1030 TSML1040 TEMT1000 18-Jul-08 Photointerrupter PDF

    S 1040 smd

    Abstract: TSML1020 TEMT1000 TSML1000 TSML1030 TSML1040
    Contextual Info: TSML1000 / 1020 / 1030 / 1040 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs TSML1000 Description TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for radiant power under pulse conditions, forward voltage


    Original     		TSML1000 TSML1000 TSML1020 TSML1030 TSML1040 TEMT1000 D-74025 08-Mar-05 S 1040 smd TSML1020 TEMT1000 TSML1030 TSML1040 PDF

    TSML1020

    Abstract: TEMT1000 TSML1000 TSML1030 TSML1040
    Contextual Info: TSML1000/1020/1030/1040 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs TSML1000 Description TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for radiant power under pulse conditions, forward voltage


    Original     		TSML1000/1020/1030/1040 TSML1000 TSML1000 TSML1020 TSML1030 TSML1040 TEMT1000 08-Apr-05 TSML1020 TEMT1000 TSML1030 TSML1040 PDF

    TEMD1000

    Abstract: TSMF1000 TSMF1020 TSMF1030 TSMF1040
    Contextual Info: TSMF1000/1020/1030/1040 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF1000 TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology DH molded in clear SMD package with dome


    Original     		TSMF1000/1020/1030/1040 TSMF1000 TSMF1000 TSMF1020 TSMF1030 TSMF1040 08-Apr-05 TEMD1000 TSMF1020 TSMF1030 TSMF1040 PDF

    Contextual Info: TSMF1000 / 1020 / 1030 / 1040 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero TSMF1000 Description TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology DH molded in clear SMD package with dome


    Original     		TSMF1000 TSMF1020 TSMF1030 TSMF1040 TEMD1000 08-Apr-05 PDF

    Contextual Info: TSMF1000 / 1020 / 1030 / 1040 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero TSMF1000 Description TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology DH molded in clear SMD package with dome


    Original     		TSMF1000 TSMF1020 TSMF1030 TSMF1040 TEMD1000 D-74025 08-Mar-05 PDF

    RLT9250G

    Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT9250G TECHNICAL DATA High Power Infrared Laserdiode Structure: AlGaAs/GaAs quantum well Lasing wavelength: 915 nm typ., singlemode


    Original     		RLT9250G RLT9250G PDF

    Contextual Info: ROITHNER LASERTECHNIK A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 office@roithner-laser.com www.roithner-laser.com RLT80810GS TECHNICAL DATA Infrared Laserdiode Structure: AlGaAs/GaAs Lasing wavelength: 808 nm typ., singlemode


    Original     		RLT80810GS PDF

    RLT92100G

    Abstract: 925nm V920
    Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT92100G TECHNICAL DATA High Power Infrared Laserdiode Structure: AlGaAs/GaAs quantum well Lasing wavelength: 920 nm typ., singlemode


    Original     		RLT92100G RLT92100G 925nm V920 PDF

    840 nm GaAs

    Abstract: RLT8410G ma4060
    Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT8410G TECHNICAL DATA High Power Infrared Laserdiode NOTE! Structure: AlGaAs/GaAs Lasing wavelength: 840 nm typ.


    Original     		RLT8410G 840 nm GaAs RLT8410G ma4060 PDF

    laserdiode 820 nm

    Abstract: RLT8230G
    Contextual Info: ROITHNER LASERTECHNIK A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 office@roithner-laser.com www.roithner-laser.com RLT8230G TECHNICAL DATA High Power Infrared Laserdiode NOTE! Structure: AlGaAs/GaAs Lasing wavelength: 820 nm typ.


    Original     		RLT8230G laserdiode 820 nm RLT8230G PDF

    TEMD1000

    Abstract: TSMF1000 TSMF1020 TSMF1030 TSMF1040
    Contextual Info: TSMF1000/1020/1030/1040 Vishay Semiconductors High Speed IR Emitting Diode in SMD Package Description TSMF1000 TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology molded in clear SMD package with dome lens.


    Original     		TSMF1000/1020/1030/1040 TSMF1000 TSMF1000 TSMF1020 TSMF1030 TSMF1040 TEMD1000 D-74025 08-Mar-01 TEMD1000 TSMF1020 TSMF1030 TSMF1040 PDF

    Laser-Diode 808

    Abstract: RLT80810G 808 nm 300 mW LD
    Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT80810G TECHNICAL DATA High Power Infrared Laserdiode Structure: AlGaAs/GaAs Lasing wavelength: 808 +/- 3 nm typ., singlemode


    Original     		RLT80810G Laser-Diode 808 RLT80810G 808 nm 300 mW LD PDF

    TSML1000

    Abstract: TSML1020 TSML1030 TSML1040
    Contextual Info: TSML1000/1020/1030/1040 Vishay Semiconductors Extented Power IR Emitting Diode in SMD Package Description TSML10.0 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for


    Original     		TSML1000/1020/1030/1040 TSML10 TSML1000 TSML1020 TSML1030 TSML1040 D-74025 TSML1000 TSML1020 TSML1030 TSML1040 PDF

    encoder 9985

    Abstract: 9985 angular encoder 9985 encoder S 1040 smd TSML1000 TSML1020 TSML1030 TSML1040 9985, encoder
    Contextual Info: TSML1000/1020/1030/1040 Vishay Telefunken Extented Power IR Emitting Diode in SMD Package Description TSML1000 TSML10.0 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology molded in clear SMD package This technology represents best performance for


    Original     		TSML1000/1020/1030/1040 TSML1000 TSML10 TSML1020 TSML1030 TSML1040 D-74025 28-Nov-00 encoder 9985 9985 angular encoder 9985 encoder S 1040 smd TSML1000 TSML1020 TSML1030 TSML1040 9985, encoder PDF

    TEMD1000

    Abstract: TSMF1000 TSMF1020 TSMF1030 TSMF1040
    Contextual Info: TSMF1000/1020/1030/1040 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in SMD Package Description TSMF1000 TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology DH molded in clear SMD package with dome


    Original     		TSMF1000/1020/1030/1040 TSMF1000 TSMF1000 TSMF1020 TSMF1030 TSMF1040 TEMD1000 D-74025 21-May-03 TEMD1000 TSMF1020 TSMF1030 TSMF1040 PDF

    100mw

    Abstract: RLT67100G DSA0010917
    Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT67100G TECHNICAL DATA High Power Visible Wavelength Laserdiode Structure: InGaAlP/GaAs, Aperture: 1 x 30 µm


    Original     		RLT67100G 100mW 100mw RLT67100G DSA0010917 PDF

    tsmf

    Contextual Info: TSMF1000/1020/1030/1040 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in SMD Package TSMF1000 Description TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology DH molded in clear SMD package with dome


    Original     		TSMF1000/1020/1030/1040 TSMF1000 TSMF1020 TSMF1030 TSMF1040 TEMD1000 D-74025 21-May-03 tsmf PDF

    Contextual Info: TSML1000/1020/1030/1040 Vishay Telefunken Extented Power IR Emitting Diode in SMD Package Description TSML1000 TSML10.0 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology molded in clear SMD package This technology represents best performance for


    Original     		TSML1000/1020/1030/1040 TSML1000 TSML10 TSML1020 TSML1030 TSML1040 D-74025 08-Mar-01 PDF

    Contextual Info: TSMF1000/1020/1030/1040 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in SMD Package Description TSMF1000 TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology DH molded in clear SMD package with dome


    Original     		TSMF1000/1020/1030/1040 TSMF1000 TSMF1000 TSMF1020 TSMF1030 TSMF1040 TEMD1000 D-74025 21-May-03 PDF

    840 nm GaAs

    Abstract: RLT8350G NM12
    Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT8350G TECHNICAL DATA High Power Infrared Laserdiode Structure: AlGaAs/GaAs quantum well, Aperture 3 x 1.5 µm²


    Original     		RLT8350G 840 nm GaAs RLT8350G NM12 PDF

    RLT68250G

    Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT68250G TECHNICAL DATA High Power Visible Wavelength Laserdiode NOTE! Structure: AlGaInP/GaAs, Aperture: 1 x 50 µm


    Original     		RLT68250G RLT68250G PDF

    RLT7810G

    Abstract: 780 laser diode laser diode 780 nm
    Contextual Info: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT7810G TECHNICAL DATA High Power Infrared Laserdiode Structure: AlGaAs/GaAs quantum well, Aperture 3 x 1.5 µm


    Original     		RLT7810G RLT7810G 780 laser diode laser diode 780 nm PDF