G84 DIODE Search Results

g84 diode

Contextual Info: RECTIFIER, 6kV, 500mA, 350ns IDIOTI i s t i January 7, 1998 QUICK REFERENCE DATA • • • • PF75 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE FAST RECTIFIER DIODE V r= 6000V If= 500mA trr= 35QnS

THGB

Contextual Info: IDIOTI is t i January 7, 1998 RECTIFIER, 5kV, 360mA, 30ns PFF50 TEL:805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com A X IA L LEADED HERMETICALLY SEALED HIGH VOLTAGE SUPERFAST RECTIFIER DIODE Q U IC K REFERENCE DATA Very low reverse recovery time

Contextual Info: RECTIFIER, 5kV, 360mA, 30ns January 7, 1998 PFF50 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com A X IA L LEADED HERMETICALLY SEALED HIGH VOLTAGE SUPERFAST RECTIFIER DIODE Q U IC K REFERENCE DATA Very low reverse recovery tim e Avalanche capability

Contextual Info: Light Emitting Diodes LNG849RFD Square Type □5.7 mm x 2.7 mm Series • Absolute Maximum Ratings Ta = 25°C Parameter  Lighting Color / Lens Color Symbol Rating Unit Power dissipation PD 90 mW Forward current IF 30 mA Pulse forward current * IFP 150

N349

Abstract: LN249RPH R942 LN24 LN349GPH LN449YPH LNG849RFD LN249 V30010
Contextual Info: Light Emitting Diodes LNG849RFD Square Type □5.7 mm x 2.7 mm Series • Absolute Maximum Ratings Ta = 25°C Symbol Rating  Orange / Red Diffused Unit M Di ain sc te on na tin nc ue e/ d Parameter  Lighting Color / Lens Color PD 90 mW Forward current

Contextual Info: Light Emitting Diodes LNG849RFD Square Type □5.7 mm x 2.7 mm Series • Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Power dissipation PD 90 mW Forward current IF 30 mA Pulse forward current * IFP 150 mA Reverse voltage VR 3 V Operating ambient temperature

Contextual Info: Light Emitting Diodes LNG849RFD Square Type □5.7 mm x 2.7 mm Series • Absolute Maximum Ratings Ta = 25°C Parameter  Lighting Color / Lens Color Symbol Rating Unit PD 90 mW Forward current IF 30 mA Pulse forward current * IFP 150 mA Reverse voltage

diode 1200A 1000V rectifier

Abstract: BP107 R9G01200A powerex R9G0 5400 5400V
Contextual Info: ^OWEREK R9G0 1200A Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 General Purpose Rectifier 1200 Amperes Average 5400 Volts Scale = 2”

diode 1200A 1000V rectifier

Abstract: BP107 R9G01200A R9G0
Contextual Info: 72*Wb21 OOObS'îO 71T W PRX R 9 Q 0 1200A Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 G&HBrdl Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 f j ç ç f j f f e p POIilEREX INC

SEC irf630

Abstract: IRF630 irf631 IRF630 SEC irf632 IRF633 for IRF630
Contextual Info: ZETEX SEMICOND UCTORS TT70S7Û IS» D 0 0 0 55 7 4 3 IZETB 95D 0 5 5 7 4 I T~3*f-n IRF630 IRF631 IRF632 IRF633 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

Contextual Info: International pmia ^Rectifier_ IRGMC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

til 31a

Abstract: IRGMC40U
Contextual Info: International ïor iRectifier PD-9.717A IRGMC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

irf244

Abstract: pd9528 irf244r
Contextual Info: 11E D I 4055452 Q QQTI Q1* ^ | Data Sheet No. PD-9.528A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IÖ R T-39-13 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRF2 4 4 IRF2 4 5 N-CHANNEL 250 Volt, 0.28 Ohm HEXFET T0-204AA TO-3 Hermetic Package

Contextual Info: TOSHIBA TC74LCX374F/FW/FS Low Vottage Octal D-Type Flip Flop with SV Tolerant Inputs and Outputs The TC74LCX374 is a high performance CMOS OCTAL DTYPE FLIP FLOP. Designed for use in 3.3 Volt systems, it achieves high speed operation while maintaining the CMOS

HD66772

Abstract: HD66775 150 g25 capacitor BY176 cl11 capacitor
Contextual Info: To all our customers Information regarding change of names mentioned within this document, to Renesas Technology Corp. On April 1st 2003 the following semiconductor operations were transferred to Renesas Technology Corporation: operations covering microcomputer, logic,

HD66775

Contextual Info: —PRELIMINARY— HD66775 120-Channel Gate Driver for Color-TFT Liquid Crystal Displays Rev.0.3 September 2001 Description HD66775 is a gate-driver IC for systems with color-TFT-liquid-crystal dot-matrix graphic displays. It incorporates a circuit for driving 120 channels of TFT gate lines, and realizes the liquid crystal

BZX84B8V2g

Contextual Info: BZX84-G-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Silicon planar Zener diodes 3 • The Zener voltages are graded according to the international E24 standard. Standard Zener voltage tolerance is ± 5 %, indicated by the “C”

marking code h65

Abstract: marking h60 sot-23 BZX84C9 G69 marking MARKING H81 BZX84-V-G
Contextual Info: BZX84-V-G-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Silicon planar power Zener diodes 3 • The zener voltages are graded according to the international E 24 standard. Standard zener voltage tolerance is ± 5 %. Replace “C” with “B”

igbt inverter welder schematic

Abstract: inverter welder schematic diagram MLT 22 545 arc welder schematic MCT thyristor chARGE PUMP igbt drive inverter welder schematic arc welder inverter k 3918 regulator full bridge arc welder
Contextual Info: HIP2030 30V MCT/IGBT Gate Driver Description ± Polarity Gate Drive The HIP2030 is a medium voltage integrated circuit MVIC capable of driving large capacitive loads at high voltage slew rates (dv/dts). This device is optimized for driving 60nF of MOS gate capacitance at 30V peak to peak in less than

Contextual Info: f f i H A R R HIP2030 IS S E M I C O N D U C T O R 30V MCT/IGBT Gate Driver January 1995 Features • Description ± Polarity Gate Drive • High Output Voltage Swing. 30V • Peak Output C urren

Contextual Info: HIP2030 HARRIS S E M I C O N D U C T O R 30V MCT/IGBT Gate Driver July 1998 Description Features ± Polarity Gate Drive The HIP2030 is a medium voltage integrated circuit MVIC capable of driving large capacitive loads at high voltage slew rates (dv/dts). This device is optimized for driving 60nF of

Winbond W83697HF

Abstract: W83697HF acer 8920 B0JK 8456B
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g61 chipset

Abstract: SL49P 512K-kA SL49Q pentium III motherboard ISA SL4x architecture of pentium microprocessor intel g41 R 133 A SL386
Contextual Info: ® Intel Pentium III Xeon Processor Specification Update Release Date: November 2001 Order Number: 244460-031 The Pentium® III Xeon™ processor may contain design defects or errors known as errata that may cause the product to deviate from published specifications. Current characterized errata are documented in this Specification Update.

Sprecher Schuh LE 2-16

Abstract: Sprecher Schuh CS1 Sprecher Schuh timer Sprecher Schuh LE 2-20
Contextual Info: G Control & Timing Relays Control & Timing Relays CS7 Industrial Control Relays. G2 Technical Information. G17