G84 DIODE Search Results

Contextual Info: RECTIFIER, 5kV, 360mA, 30ns January 7, 1998 PFF50 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com A X IA L LEADED HERMETICALLY SEALED HIGH VOLTAGE SUPERFAST RECTIFIER DIODE Q U IC K REFERENCE DATA Very low reverse recovery tim e Avalanche capability

Contextual Info: Light Emitting Diodes LNG849RFD Square Type □5.7 mm x 2.7 mm Series • Absolute Maximum Ratings Ta = 25°C Parameter  Lighting Color / Lens Color Symbol Rating Unit Power dissipation PD 90 mW Forward current IF 30 mA Pulse forward current * IFP 150

Contextual Info: Light Emitting Diodes LNG849RFD Square Type □5.7 mm x 2.7 mm Series • Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Power dissipation PD 90 mW Forward current IF 30 mA Pulse forward current * IFP 150 mA Reverse voltage VR 3 V Operating ambient temperature

Contextual Info: Light Emitting Diodes LNG849RFD Square Type □5.7 mm x 2.7 mm Series • Absolute Maximum Ratings Ta = 25°C Parameter  Lighting Color / Lens Color Symbol Rating Unit PD 90 mW Forward current IF 30 mA Pulse forward current * IFP 150 mA Reverse voltage

diode 1200A 1000V rectifier

Abstract: BP107 R9G01200A powerex R9G0 5400 5400V
Contextual Info: ^OWEREK R9G0 1200A Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 General Purpose Rectifier 1200 Amperes Average 5400 Volts Scale = 2”

SEC irf630

Abstract: IRF630 irf631 IRF630 SEC irf632 IRF633 for IRF630
Contextual Info: ZETEX SEMICOND UCTORS TT70S7Û IS» D 0 0 0 55 7 4 3 IZETB 95D 0 5 5 7 4 I T~3*f-n IRF630 IRF631 IRF632 IRF633 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

Contextual Info: International pmia ^Rectifier_ IRGMC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

til 31a

Abstract: IRGMC40U
Contextual Info: International ïor iRectifier PD-9.717A IRGMC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

irf244

Abstract: pd9528 irf244r
Contextual Info: 11E D I 4055452 Q QQTI Q1* ^ | Data Sheet No. PD-9.528A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IÖ R T-39-13 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRF2 4 4 IRF2 4 5 N-CHANNEL 250 Volt, 0.28 Ohm HEXFET T0-204AA TO-3 Hermetic Package

Contextual Info: TOSHIBA TC74LCX374F/FW/FS Low Vottage Octal D-Type Flip Flop with SV Tolerant Inputs and Outputs The TC74LCX374 is a high performance CMOS OCTAL DTYPE FLIP FLOP. Designed for use in 3.3 Volt systems, it achieves high speed operation while maintaining the CMOS

g51 SOT23

Abstract: BZX84C2V4-V-G H60 H70 marking G85 Marking g51 BZX84B3V6-V-G marking h60 sot-23 H68 marking code BZX84-V-G
Contextual Info: BZX84-V-G-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Silicon planar power Zener diodes 3 • The zener voltages are graded according to the international E 24 standard. Standard zener voltage tolerance is ± 5 %. Replace “C” with “B”

Contextual Info: f f i H A R R HIP2030 IS S E M I C O N D U C T O R 30V MCT/IGBT Gate Driver January 1995 Features • Description ± Polarity Gate Drive • High Output Voltage Swing. 30V • Peak Output C urren

Winbond W83697HF

Abstract: W83697HF acer 8920 B0JK 8456B
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g61 chipset

Abstract: SL49P 512K-kA SL49Q pentium III motherboard ISA SL4x architecture of pentium microprocessor intel g41 R 133 A SL386
Contextual Info: ® Intel Pentium III Xeon Processor Specification Update Release Date: November 2001 Order Number: 244460-031 The Pentium® III Xeon™ processor may contain design defects or errors known as errata that may cause the product to deviate from published specifications. Current characterized errata are documented in this Specification Update.

48-Pin QFN

Abstract: LTC2204 LTC2205-14 LTC2206 LTC2206-14 LTC2207 LTC2207-14 snr130
Contextual Info: LTC2205/LTC2204 16-Bit, 65Msps/40Msps ADCs DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Sample Rate: 65Msps/40Msps 79dB SNR and 100dB SFDR 2.25VP-P Range SFDR >92dB at 140MHz (1.5VP-P Input Range) PGA Front End (2.25VP-P or 1.5VP-P Input Range)

LTC5592

Abstract: marking c5a 8 pins LTC5593 LTC5590 LTC5591
Contextual Info: LTC5593 Dual 2.3GHz to 4.5GHz High Dynamic Range Downconverting Mixer DESCRIPTION FEATURES n n n n n n n n n n n n n n Conversion Gain: 8.5dB at 2500MHz IIP3: 27.7dBm at 2500MHz Noise Figure: 9.5dB at 2500MHz 15.9dB NF Under 5dBm Blocking High Input P1dB 52dB Channel Isolation at 2500MHz

G86 770 A2

Abstract: MABAES0060 LTC2205-14 LTC2206 LTC2206-14 LTC2207 LTC2207-14 LTC2204 rf transistor 2.5GHz 33D9
Contextual Info: LTC2205/LTC2204 16-Bit, 65Msps/40Msps ADCs DESCRIPTIO U FEATURES n n n n n n n n n n n n n Sample Rate: 65Msps/40Msps 79dB SNR and 100dB SFDR 2.25VP-P Range SFDR >92dB at 140MHz (1.5VP-P Input Range) PGA Front End (2.25VP-P or 1.5VP-P Input Range) 700MHz Full Power Bandwidth S/H

Contextual Info: LTC2205/LTC2204 16-Bit, 65Msps/40Msps ADCs DESCRIPTION FEATURES n n n n n n n n n n n n n Sample Rate: 65Msps/40Msps 79dB SNR and 100dB SFDR 2.25VP-P Range SFDR >92dB at 140MHz (1.5VP-P Input Range) PGA Front End (2.25VP-P or 1.5VP-P Input Range) 700MHz Full Power Bandwidth S/H

Contextual Info: LTC1992 Family Low Power, Fully Differential Input/Output Amplifier/Driver Family FEATURES n n n n n n n n n n n n n DESCRIPTION The LTC 1992 product family consists of five fully differential, low power amplifiers. The LTC1992 is an unconstrained fully differential amplifier. The LTC1992-1, LTC1992-2,

LTC1992IMS8#PBF

Abstract: marking code g81 G89 DATASHEET LTC1992 LTC1992-1 LTC1992-10 LTC1992-2 LTC1992-5 LTC1992CMS8 G114
Contextual Info: LTC1992 Family Low Power, Fully Differential Input/Output Amplifier/Driver Family Features Description Adjustable Gain and Fixed Gain Blocks of 1, 2, 5 and 10 n ±0.3% Max Gain Error from –40°C to 85°C n 3.5ppm/°C Gain Temperature Coefficient n 5ppm Gain Long Term Stability

SSD1606

Contextual Info: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1606 Advanced information 4GS Active Matrix EPD 128 x 180 Display Driver with Controller This document contains information on a new product. Specifications and information herein are subject to change without notice.

ST7783

Abstract: Sitronix Technology ST7783 ST7781 929 rev oh s26 G86 703 A2 s534 diode 929 rev oh S29 G82 770 A2 HEF 4543 IC Sitronix Technology
Contextual Info: ST ST7781 262K Color Single –Chip TFT Controller/Driver 1. Introduction The ST7781 is a single-chip controller/driver for 262K-color, graphic type TFT-LCD. It consists of 720 source line and 320 gate line driving circuits. This chip is capable of connecting directly to an external microprocessor, and accepts,

S432 DIODE schottky

Abstract: s448 diode DIODE S417 Schottky diode s453 diode s426 DIODE S438 S466 s448 schottky diode eeprom s130 eeprom s190
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

DIODE GOC 63

Abstract: g85 wafer diode S334 db3 x044 s217 diode dB06 diode TFT 65K colors 128 x 160 pixels diode s199 s394 54175
Contextual Info: ST Sitronix ST7712 262K Color Single-Chip TFT Controller/Driver 1. Introduction The ST7712 is a single-chip which generates 396 Source lines and 132 gate lines controller/driver for 262K color TFT dot graphic display. ST7712 support 18-bit high-speed bus interface and Serial Peripheral Interface SPI , thus it can perform