G6849 Search Results
G6849 Datasheets (4)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
---|---|---|---|---|---|---|---|
G6849 | Hamamatsu | InGaAs PIN photodiode | Original | 118.17KB | 2 | ||
G6849 | Hamamatsu Photonics | InGaAs PIN photodiode | Original | 141.28KB | 2 | ||
G6849-01 | Hamamatsu | Photodiode, PIN Module, 0.95A/W Sensitivity, 2nA | Original | 141.29KB | 2 | ||
G6849-01 | Hamamatsu | InGaAs PIN photodiode | Original | 118.17KB | 2 |
G6849 Price and Stock
Amphenol Corporation 68498-122HLFHeaders & Wire Housings HDR RA 1X22P |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
68498-122HLF | Each | 357 | 4 |
|
Buy Now | |||||
Amphenol Corporation 68498-136HLFHeaders & Wire Housings BREAKAWAY HEADER 36 |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
68498-136HLF | Each | 235 | 3 |
|
Buy Now | |||||
Amphenol Corporation 68491-108HLFHeaders & Wire Housings BRKAWY HDR STR DR 2X20 318/120 |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
68491-108HLF | Each | 1,600 |
|
Buy Now | ||||||
Amphenol Corporation 68498-411HLFHeaders & Wire Housings 11P UNSHROUD HEADER RT ANGLE |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
68498-411HLF | Each | 8,400 |
|
Buy Now | ||||||
TE Connectivity EG6849-000S02-03-R-BMS-CS4100 MOQ Reduction |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
EG6849-000 |
|
Buy Now |
G6849 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
G6849-01
Abstract: quadrant photodiode G6849 AK 1012
|
Original |
G6849 G6849 G6849-01: G6849-01 SE-171 KIRD1042E02 G6849-01 quadrant photodiode AK 1012 | |
quadrant photodiode
Abstract: G6849 G6849-01
|
Original |
G6849 G6849 G6849-01: G6849-01 SE-171 KIRD1042E01 quadrant photodiode G6849-01 | |
G6849
Abstract: G6849-01 quadrant photodiode
|
Original |
G6849 G6849 G6849-01: G6849-01 SE-171 KIRD1042E03 G6849-01 quadrant photodiode | |
Contextual Info: PHOTODIODE InGaAs PIN photodiode G6849 series Quadrant type Features Applications l Active area l Spot light position detection l Measurement equipment G6849 : B2 mm quadrant element G6849-01: B1 mm quadrant element l Low noise l High reliability • General ratings |
Original |
G6849 G6849 G6849-01: G6849-01 SE-171 KIRD1042E02 | |
AW100Contextual Info: PHOTODIODE InGaAs PIN photodiode G6849 series Quadrant type Features Applications l Active area l Spot light position detection l Measurement equipment G6849 : B2 mm quadrant element G6849-01: B1 mm quadrant element l Low noise l High reliability • General ratings |
Original |
G6849 G6849 G6849-01: G6849-01 SE-171 KIRD1042E03 AW100 | |
Contextual Info: InGaAs PINフォトダイオード G6849シリーズ 4分割型 特長 用途 受光面サイズ G6849 : φ2 mmを4分割 G6849-01: φ1 mmを4分割 低ノイズ スポット光の位置検出 計測機器 高信頼性 構成 G6849 φ2/4分割 項目 受光面サイズ |
Original |
G6849ã G6849 G6849-01: G6849-01 KIRDA0059JB KIRDA0143JB KIRD1042J04 | |
G6849-01
Abstract: G6849 KGPD1003J01 photodiode InGaAs NEP
|
Original |
G6849 G6849-01: G6849-01 G6849-00 KIRDA0059JA KIRDA0143JA G6849-01 G6849 KGPD1003J01 photodiode InGaAs NEP | |
Contextual Info: H A M A M A T S U PRELIMINARY DATA Oct. 1997 InGaAs PIN PHOTODIODE G6849 Quadrant type FEATURES • Active area: <j>2 m m /4 elements • Low noise • High reliability APPLICATIONS • Position detection of spot light • Measurement equipment •GENERAL RATINGS |
OCR Scan |
G6849 KIRD1017E01 | |
InGaAs quadrantContextual Info: InGaAs PIN photodiodes G6849 series Quadrant type Features Applications Photosensitive area G6849 : φ2 mm quadrant element G6849-01: φ1 mm quadrant element Light spot position detection Measurement equipment Low noise High reliability Structure Parameter |
Original |
G6849 G6849 G6849-01: G6849-01 KIRD1042E04 InGaAs quadrant | |
Contextual Info: セレクションガイド 2014.12 赤外線検出素子 赤 外 域 の さま ざ ま な 感 度 波 長 範 囲 に 対 応 INFRARED DETECTOR 赤外線検出素子 赤外線検出素子は計測・分析・工業・通信・農業・医 学・理 化 学・天 文 学・宇 宙 などの 分 野に幅 広く利 用 |
Original |
||
Selection guideContextual Info: Selection guide - March 2015 InGaAs Photodiodes Near infrared detectors with low noise and superb frequency characteristics HAMAMATSU PHOTONICS K.K. InGaAs Photodiodes Based on unique, in-house compound semiconductor process technology, Hamamatsu has designed and developed advanced InGaAs photodiodes that feature high speed, high |
Original |
KIRD0005E02 Selection guide | |
Contextual Info: セレクションガイド 2015.6 InGaAs フォトダイオード 低 ノイ ズ で 優 れ た 周 波 数 特 性 の 近 赤 外 線 検 出 素 子 InGaAs PHOTODIODE 当社独自の化合物半導体プロセス技術を生かしたInGaAsフォトダイオードは |
Original |
||
Selection guide
Abstract: Infrared detectors P13243-011MA
|
Original |
KIRD0001E08 Selection guide Infrared detectors P13243-011MA |