G2 SOT Search Results

Marking G2

Abstract: BF599
Contextual Info: SEMICONDUCTOR BF599 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking G2 No. 1 Item Marking Device Mark G2 BF599 hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

Contextual Info: MMO 62 AC Controller Modules VRSM VDSM VRRM VDRM V V 1200 1600 1200 1600 IRMS = 54 A VRRM = 1200-1600 V G1 K1/A2 Type miniBLOC, SOT-227 B G1 K2/A1 MMO 62-12io6 MMO 62-16io6 K2/A1 G2 G2 K1/A2 Test Conditions IRMS ITRMS ITAVM TC = 110°C, 50 - 400 Hz, module

MMO90

Abstract: 90-12io6 IXYS MMO90
Contextual Info: MMO 90 AC Controller Modules VRSM VDSM VRRM VDRM V V 1200 1600 1200 1600 IRMS = 90 A VRRM = 1200-1600 V G1 K1/A2 Type miniBLOC, SOT-227 B G1 K2/A1 MMO 90-12io6 MMO 90-16io6 K2/A1 G2 G2 K1/A2 Test Conditions Maximum Ratings IRMS ITRMS ITAVM TC = 110°C, 50 - 400 Hz, module

IGD 001

Contextual Info: MMO 62 AC Controller Modules VRSM VDSM VRRM VDRM V V 1200 1600 1200 1600 IRMS = 54 A VRRM = 1200-1600 V G1 K1/A2 Type miniBLOC, SOT-227 B G1 K2/A1 MMO 62-12io6 MMO 62-16io6 K2/A1 G2 G2 K1/A2 Test Conditions IRMS ITRMS ITAVM TC = 110°C, 50 - 400 Hz, module

Contextual Info: AP2626GY RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET D2 Simple Drive Requirement BVDSS S1 D1 Smaller Outline Package RDS ON G2 Surface mount package SOT-26 RoHS compliant 30V 72m ID S2 3.3A G1 Description

Contextual Info: Temic BF799 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications In high gain IF-amplifiers for surface acoustic wave filters. Features • • High power gain Low noise figure 1 R iJ— E3T 2 9+9280 BF799 Marking: G2 Plastic case SOT 23

Contextual Info: AP2533GY-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET D2 Low Gate Charge N-CH BVDSS S1 Fast Switching Performance RDS ON D1 Surface Mount Package 150m ID G2 RoHS Compliant & Halogen-Free SOT-26 16V

Transistor D 799

Abstract: transistor marking zg BF799 Transistor K 799
Contextual Info: BF 799 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications In high gain IF-amplifiers for surface acoustic wave filters. Features D High power gain D Low noise figure 1 2 3 94 9280 BF799 Marking: G2 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter

1472A

Contextual Info: Philips Semiconductors Preliminary specification CMOS single-chip 16-bit microcontroller XA-G2 This excerpt represents a short-form datasheet only. For full datasheet, refer to Data Handbook IC25:16-bit 80C51XA Microcontrollers extended Architecture . FAMILY DESCRIPTION

AP2530GY

Abstract: AP2530 single P-Channel mosfet sot-26
Contextual Info: AP2530GY Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Low On-resistance N-CH BVDSS D2 S1 RDS ON D1 ▼ Surface Mount Package ▼ RoHS Compliant 72mΩ ID G2 SOT-26 30V S2 3.3A

AP2532GY

Abstract: rd25
Contextual Info: AP2532GY RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET D2 ▼ Low Gate Charge N-CH BVDSS S1 ▼ Fast Switching Performance RDS ON D1 ▼ Surface Mount Package 130mΩ ID G2 SOT-26 30V S2 2.4A P-CH BVDSS

AP2531GY

Abstract: AP2531
Contextual Info: AP2531GY Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge Drive ▼ Low On-resistance N-CH BVDSS D2 S1 RDS ON D1 ▼ Surface Mount Package ▼ RoHS Compliant 58mΩ ID G2 SOT-26 16V

AP2530GY

Abstract: SOT-26
Contextual Info: AP2530GY RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Low On-resistance N-CH BVDSS D2 S1 RDS ON D1 ▼ Surface Mount Package 72mΩ ID G2 SOT-26 30V S2 3.3A P-CH BVDSS G1 -30V

f936

Abstract: Q62702-F936 Silicon N Channel MOSFET Tetrode
Contextual Info: Silicon N Channel MOSFET Tetrode ● BF 995 For input and mixer stages in FM and VHF TV tuners Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 4 Package1) BF 995 MB Q62702-F936 S SOT-143 D G2 G1 Maximum Ratings Parameter Symbol Values Unit

m4306n

Abstract: ZDM4306N DSA003723 M4306
Contextual Info: SM-8 DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS ZDM4306N ISSUE 1 - NOVEMBER 1995 D1 G1 D1 S1 D2 G2 D2 S2 SM-8 8 LEAD SOT223 PARTMARKING DETAIL – M4306N ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb=25°C

BUP213

Abstract: BSS123L6327 BSS123E6327 bup314d IPD06N03LAG BSP170PE6327T BSP315 SPD06N80C3XT BSP295-L6327 BSP129E6327
Contextual Info: Mosfets TO-218AB TO-220AB and TO-220 1-G TO-220FP TO-247 1 G 2 D 3 S 1-G 1-G 2-C 2-D 3-E TO-262 NEW! 3-S D-PAK, D2-PAK and TO-252 D D 2 S 3-S 3 SO-8 Dual G2 S2 1 3-D D2 D2 D 5 3-S 2-D G2 1 D 2 D G1 G 1 D1 4 3 2 2 1 G 6 7 D 8 D D 8 7 D 6 D 2-D 4 D D C 3 2S

AP2531GY

Contextual Info: AP2531GY RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge Drive ▼ Low On-resistance N-CH BVDSS D2 S1 RDS ON D1 ▼ Surface Mount Package 58mΩ ID G2 SOT-26 16V S2 3.5A P-CH BVDSS G1

uhf pcb antenna

Abstract: UHF rfid antenna RFID loop antenna design nxp proximity antenna design NXP UCODE G2XM Types of Radar Antenna UHF RFID pcb antenna chip antenna rfid UHF FR4 substrate with dielectric constant 4.4 nxp rfid uhf transponder
Contextual Info: AN 1715 UHF RFID PCB antenna design Rev. 3.0 – January 21 2010 Application note Document information Info Content Keywords UCODE EPC G2, G2XM, G2XL, Reference Design, Antenna Design, PCB Abstract This application note provides basic antenna knowledge, which is

MARKING G2

Abstract: BF550 BF550R
Contextual Info: BF 550 / BF 550 R TELEFUNKEN Semiconductors Silicon PNP HF Transistor Applications RF-IF amplifier specially for thick and thin film circuits. Features D High power gain D Low noise figure 1 2 1 3 3 2 94 9280 BF550 Marking: G2 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter

APM2700AC

Abstract: APM2700A MOSFET P SOT-23 S1 SOT-23-6 SOT-23 marking 2f p-Channel ISD05 sot-23-6 n-channel mosfet
Contextual Info: APM2700AC Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • N-Channel 20V/2A, D1 RDS(ON)= 125mΩ(typ.) @ VGS= 4.5V S1 D2 RDS(ON)= 175mΩ(typ.) @ VGS= 2.5V RDS(ON)= 280mΩ(typ.) @ VGS= 1.8V • G1 S2 G2 P-Channel Top View of SOT-23-6

MOSFET "MARKING CODE 7V"

Abstract: SOT-363 mosfet A495 5G12
Contextual Info: SSN2N7002B Dual N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 60V 0.25A SOT-363 RDS(ON) ( ) Max 3 @VGS = 10V 1 4 @V GS = 5V D1 (6) D2 (3) FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. G2(5) G1(2) SOT-363 package.

ZDM4206N

Abstract: DSA003722
Contextual Info: SM-8 DUAL N-CHANNEL ENHANCEMENT MODE AVALANCHE RATED MOSFET ZDM4206N ISSUE 1 - NOVEMBER 1995 D1 G1 D1 S1 D2 G2 D2 S2 SM-8 8 LEAD SOT223 PARTMARKING DETAIL – M4206N ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb=25°C

RFID loop antenna design

Abstract: matching RFID loop antenna uhf pcb antenna pcb antenna design uhf rfid nxp AN10906 chip antenna rfid UHF NXP antenna design guide RFID loop antenna UHF rfid antenna
Contextual Info: AN10906 Starter guide PCB tagging Rev. 2.0 — 21 Jan 2010 184720 Application note PUBLIC Document information Info Content Keywords UCODE EPC G2, G2XM, G2XL, Reference Design, Antenna Design, PCB Abstract This paper describes two basic methods to design RFID UHF antenna on

DB1-822

Abstract: BF1012
Contextual Info: SIEMENS BF1012S Silicon N-Channel MOSFET Tetrode X AGC o HF o— Input - X Drain G2 I HF Output + DC Gl 1 GND ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code PIN Configuration BF 1012S NYs Q62702-F1627