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Catalog Datasheet	Type	Document Tags	PDF
MPS6601 Abstract: MPS6602 transistor 7 Contextual Info: SAMSUNG SEMICONDUCTOR INC 14E MPS6602 D 1 7*^4142 G007333 i jj NPN EPITAXIAL SILICON TRANSISTOR r " r T-29-21 AMPLIFIER TRANSISTOR • C o lle cto r-E m itte r Voltage: V c e o = 4 0 V • C o lle cto r D issipation: P c max =825mW ABSOLUTE MAXIMUM RATINGS (T. =25°C)	OCR Scan	MPS6602 T-29-21 825mW MPS6601 VMPS6601 100fiA, 100mA, 500mA, 1000mA, transistor 7	PDF
Contextual Info: SAMSUNG S E M I C O ND U C T O R INC 14E MPS6602 D \| 7*^4140 G007333 i jj NPN EPITAXIAL SILICON TRANSISTOR “ " r T-29-21 AMPLIFIER TRANSISTOR • C ollector-Em itter Voltage: Vcso=40V • C ollector Dissipation: Pc max =825mW ABSOLUTE MAXIMUM RATINGS (T, =25°C)	OCR Scan	G007333 MPS6602 825mW T-29-21 MPS6601	PDF

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MPS6601

Abstract: MPS6602 transistor 7
Contextual Info: SAMSUNG SEMICONDUCTOR INC 14E MPS6602 D 1 7*^4142 G007333 i jj NPN EPITAXIAL SILICON TRANSISTOR r " r T-29-21 AMPLIFIER TRANSISTOR • C o lle cto r-E m itte r Voltage: V c e o = 4 0 V • C o lle cto r D issipation: P c max =825mW ABSOLUTE MAXIMUM RATINGS (T. =25°C)

OCR Scan

MPS6602 T-29-21 825mW MPS6601 VMPS6601 100fiA, 100mA, 500mA, 1000mA, transistor 7

PDF

Contextual Info: SAMSUNG S E M I C O ND U C T O R INC 14E MPS6602 D | 7*^4140 G007333 i jj NPN EPITAXIAL SILICON TRANSISTOR “ " r T-29-21 AMPLIFIER TRANSISTOR • C ollector-Em itter Voltage: Vcso=40V • C ollector Dissipation: Pc max =825mW ABSOLUTE MAXIMUM RATINGS (T, =25°C)

OCR Scan

G007333 MPS6602 825mW T-29-21 MPS6601

PDF