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G3400
|
|
GTM
|
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Original |
PDF
|
280.39KB |
4 |
|
G340065000
|
|
Excelitas Technologies
|
PL. MIRROR RAL; BXL=80X120; D=8; |
Original |
PDF
|
1.29MB |
|
|
G3401
|
|
GTM
|
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Original |
PDF
|
311.17KB |
4 |
|
G3401L
|
|
Goford Semiconductor
|
P30V,RD(MAX)<60M@-10V,RD(MAX)<70 |
Original |
PDF
|
833.48KB |
6 |
|
G3403
|
|
GTM
|
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Original |
PDF
|
370.81KB |
4 |
|
G340331400
|
|
Excelitas Technologies
|
PL. MIRROR RAGV; BXL=10X15; D=2; |
Original |
PDF
|
47.57MB |
|
|
G340-331-400
|
|
Excelitas Technologies
|
PL. MIRROR RAGV; BXL=10X15; D=2 |
Original |
PDF
|
47.57MB |
|
|
G340332400
|
|
Excelitas Technologies
|
PL. MIRROR RAGV; BXL=60X85; D=8; |
Original |
PDF
|
47.57MB |
|
|
G3403A
|
|
GTM
|
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Original |
PDF
|
386.94KB |
4 |
|
G3404B
|
|
Goford Semiconductor
|
N30V,RD(MAX)<22M@10V,RD(MAX)<35M |
Original |
PDF
|
926.03KB |
6 |
|
G3404LL
|
|
Goford Semiconductor
|
N30V,RD(MAX)<22M@10V,RD(MAX)<35M |
Original |
PDF
|
1.02MB |
6 |
|
G340523000
|
|
Excelitas Technologies
|
PL. MIRROR RAGV; D=22.4X31.5 OVA |
Original |
PDF
|
47.57MB |
|
|
G3407
|
|
GTM
|
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Original |
PDF
|
306.58KB |
4 |
JSPG340A
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
3A Schottky Barrier Rectifier in SMB package with 40V maximum repetitive peak reverse voltage, ultra low forward voltage drop, high current and surge capability, lead-free compliant, suitable for surface mount applications. |
Original |
PDF
|
|
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