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G231
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MicroPower Direct
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IC Converter DC-DC Step Down 48VIN |
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72.95KB |
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G2310
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GTM
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N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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353.11KB |
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G2312
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Goford Semiconductor
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N20V,RD(MAX)<18M@10V,RD(MAX)<20M |
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855.06KB |
6 |
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G2313
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GTM
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P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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358.47KB |
4 |
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G2314
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GTM
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N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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PDF
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367.79KB |
4 |
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G2316B-3CJ
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GTE Microcircuits
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NMOS 2048 x 8 PROM |
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71.63KB |
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G2316B-3CJ
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GTE Microcircuits
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NMOS 2048 x 8 ROM |
Scan |
PDF
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71.63KB |
2 |
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G2316B-3CK
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GTE Microcircuits
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NMOS 2048 x 8 PROM |
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71.63KB |
2 |
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G2316B-3CK
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GTE Microcircuits
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NMOS 2048 x 8 ROM |
Scan |
PDF
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71.63KB |
2 |
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G2316B-4CJ
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GTE Microcircuits
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NMOS 2048 x 8 PROM |
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PDF
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71.63KB |
2 |
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G2316B-4CJ
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GTE Microcircuits
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NMOS 2048 x 8 ROM |
Scan |
PDF
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71.63KB |
2 |
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G2316B-4CK
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GTE Microcircuits
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NMOS 2048 x 8 PROM |
Original |
PDF
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71.63KB |
2 |
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G2316B-4CK
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GTE Microcircuits
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NMOS 2048 x 8 ROM |
Scan |
PDF
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71.63KB |
2 |
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G231I
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MicroPower Direct
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IC Converter DC-DC Step Down 48VIN |
Original |
PDF
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72.92KB |
2 |
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J2G231N2SA
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Jiangsu JieJie Microelectronics Co Ltd
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J2GxxxN2SA gas discharge tube, SMD 4.5x3.2x2.7mm, handles 2000A @ 8/20us surge, with low capacitance ≤1pF, insulation resistance ≥1 GΩ, operating temperature -40 to +90°C, suitable for surge protection in communication equipment. |
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J20G231M2LC
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Jiangsu JieJie Microelectronics Co Ltd
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Gas discharge tube in 8.0×6.0mm package with 20,000A impulse current rating, low capacitance below 1.5pF, and DC breakdown voltage options from 90V to 600V, designed for surge protection in communication and data line applications.J20GxxxM2LC gas discharge tube in 8.0×6.0mm package offers 20,000A impulse current handling at 8/20μs, low capacitance ≤1.5pF, insulation resistance ≥1 GΩ, and DC breakdown voltage options from 90V to 600V with ±20% tolerance. |
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J5G231M3SF
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Jiangsu JieJie Microelectronics Co Ltd
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7.6×5.0×5.0mm SMD gas discharge tube with 5,000A impulse discharge current handling, low capacitance below 1pF, operating temperature -40 to +125°C, and DC breakdown voltage options from 90V to 600V. |
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J5G231M2SG
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Jiangsu JieJie Microelectronics Co Ltd
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J5GxxxM2SG gas discharge tube, 4.2x5.0x5.0mm, handles 5000A impulse current, with low capacitance ≤1pF, operating temperature -40 to 85°C, suitable for surge protection in communication and data line applications. |
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J10G231M3SF
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Jiangsu JieJie Microelectronics Co Ltd
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SMD gas discharge tube J10GxxxM3SF in 7.6x5.0x5.0mm size, with DC breakdown voltage options of 90V, 230V, or 420V ±20%, impulse spark-over voltage up to 950V, 10kA surge current handling at 8/20us, and capacitance ≤1pF. |
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J5G231M2LD
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Jiangsu JieJie Microelectronics Co Ltd
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J5GxxxM2LD gas discharge tube in 5.5x6.0 mm size with 5000A impulse current handling, low capacitance below 1pF, and DC breakdown voltage from 75V to 600V, designed for surge protection in communication equipment.J5GxxxM2LD gas discharge tube in 5.5x6.0 mm size with 5000A impulse current handling, low capacitance below 1pF, and DC breakdown voltage from 75V to 600V, designed for surge protection in communication equipment. |
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