G 9084 Search Results

MSM 7225

Abstract: MOLEX 10PIN SD CARD TT 2146 female PCB connector 9pin d-sub 15PIN D-SUB CONNECTORS 68pin TO 50 PIN SCSI connector 50 pin (2x25), 2mm pitch header connectors 50PIN D-SUB CONNECTORS jst phr-6 68pin SCSI connector
Contextual Info: AUK Complete Cross Reference Competitor Part No. SLM-132-01-G-S SAMTEC SLM-140-01-G-S SAMTEC SLM-150-01-G-S SAMTEC SLM-103-01-G-S SAMTEC SLM-104-01-G-S SAMTEC SLM-106-01-G-S SAMTEC SLM-122-01-G-S SAMTEC SLM-104-01-G-D SAMTEC SLM-105-01-G-D SAMTEC SLM-106-01-G-D SAMTEC

IN3492

Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
Contextual Info: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90

43171

Abstract: 349-50598
Contextual Info: 908-43500 NOTES: 1. DRAWING DO NOT 2. SCALE THIS MATERIAL AND BODY: CONTACT: CAP: FERRULE: INSULATOR: TH 1 RD DRAWING. FINISH: BRASS, G O L D PLATED BRASS, G O L D PLATED BRASS, G O L D PLATED ANNEALED COPPER, GOLD PTFE USE A S S E M B L Y I N S T R U C T I O N S 3 4 9 - 5 0 5 9 8 A N D C R I M P U S I N G

BAV200

Abstract: BAV201 BAV202 BAV203 TELEFUNKEN IR
Contextual Info: BAV200.BAV203 TELEFUNKEN Semiconductors Silicon Epitaxial Planar Diodes Applications General purposes 94 9373 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Peak reverse voltage g Reverse voltage g Forward current Type Symbol Value Unit BAV200

43171

Abstract: 349-50598
Contextual Info: R E V 1S I O N S 908-43300 NOTES: DRAWING TH 1RD 1. DO NOT SCALE 2. MATERIAL AND BODY: CONTACT: CAP: FERRULE: INSULATOR: THIS PROJ. <§> DRAWING. FINISH: BRASS, G O L D PLATED BRASS, G O L D PLATED BRASS, G O L D PLATED ANNEALED COPPER, GOLD PTFE USE A S S E M B L Y I N S T R U C T I O N S 3 4 9 - 5 0 5 9 8 A N D C R I M P U S I N G

BAV103 temic

Abstract: BAV100 BAV101 BAV102 BAV103 bav100.bav103 VR100V
Contextual Info: BAV100.BAV103 Silicon Epitaxial Planar Diodes Applications General purposes 94 9371 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive p ppeak reverse voltage g Test Conditions Reverse voltage g Peak forward surge current Repetitive peak forward current

BAV100

Abstract: BAV101 BAV102 BAV103
Contextual Info: BAV100.BAV103 TELEFUNKEN Semiconductors Silicon Epitaxial Planar Diodes Applications General purposes 94 9371 Absolute Maximum Ratings Tj = 25_C Parameter Peak reverse voltage g Test Conditions Reverse voltage g Peak forward surge current Repetitive peak forward current

BAV17

Abstract: BAV18 BAV19 BAV20 BAV21
Contextual Info: BAV17.BAV21 TELEFUNKEN Semiconductors Silicon Epitaxial Planar Diodes Applications General purposes 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Peak reverse voltage g Test Conditions Reverse voltage g Forward current Peak forward surge current Forward peak current

BAV200

Abstract: BAV201 BAV202 BAV203 TELEFUNKEN IR
Contextual Info: BAV200.BAV203 Silicon Epitaxial Planar Diodes Applications General purposes 96 12009 Absolute Maximum Ratings Tj = 25_C Parameter Peak reverse voltage g Test Conditions Reverse voltage g Forward current Peak forward surge current Forward peak current Junction temperature

BAV200

Abstract: BAV201 BAV202 BAV203
Contextual Info: BAV200.BAV203 Vishay Telefunken Silicon Epitaxial Planar Diodes Applications General purposes 96 12009 Absolute Maximum Ratings Tj = 25_C Parameter Peak reverse voltage g Test Conditions Reverse voltage g Forward current Peak forward surge current Forward peak current

BAV17

Abstract: BAV18 BAV19 BAV20 BAV21
Contextual Info: BAV17.BAV21 Silicon Epitaxial Planar Diodes Applications General purposes 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Peak reverse voltage g Test Conditions Reverse voltage g Forward current Peak forward surge current Forward peak current Junction temperature

BAV17

Abstract: BAV18 BAV19 BAV20 BAV21
Contextual Info: BAV17.BAV21 Vishay Telefunken Silicon Epitaxial Planar Diodes Applications General purposes 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Peak reverse voltage g Test Conditions Reverse voltage g Forward current Peak forward surge current Forward peak current

BAV100

Abstract: BAV101 BAV102 BAV103
Contextual Info: BAV100.BAV103 Vishay Telefunken Silicon Epitaxial Planar Diodes Applications General purposes 94 9371 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage g Test Conditions Reverse voltage g Peak forward surge current Repetitive peak forward current

FUZZY MICROCONTROLLER

Abstract: NLX 230 TAG 8939 NLX230 MCS-96 development fuzzy NLX112
Contextual Info: EDN-SPECIAL REPORT You’re designing a control system. If you have complex equations, lots of exceptions to the equations, non­ D e sig n in g a ferryb oat d o c k in g sy s ­ linearities to accommodate, system inputs th at provide tem u sin g b o th c o n v e n t io n a l c o n ­

3GT30G

Abstract: 43171 90-A70
Contextual Info: NOTES: MATERIALS AND FINISHES BODY - BRA SS, GOLD PLATING CONTACT - BRASS, GOLD PLATING ' INSULATOR - PTFE ELECTRICAL: A. IMPEDANCE: 50 OHM B. FREQUENCY RANGE: DC 0 -6 GHz THIRD A N G LE P R O J. REVISION S DATE O FFIC A L EN G . R E L EA SE TO MFG. 29-Mar-95

LMM 2057

Abstract: TLC 7555 MBI 5066 samxon GR chn 809 LM 805 CV yx 805 3054 CHN 747 CHMC 46 CHN 932
Contextual Info: aJ}1E R^kb^l SZ[e^ O37 aJ3@s R^kb^l CaZkm O39 ,5M- Aiieb\Zmbhg Gnb]^ebg^l O3: aJ{z OZkm Mnf[^k Rrlm^f O369 {`aJbW SZiibg` Ri^\b_b\Zmbhgl O36: 1obW OZ\dbg` Ri^\b_b\Zmbhgl O36; K^Z] Fhkfbg` Ri^\b_b\Zmbhg O36< LbgbZmnk^ Sri^ O36= ymJ G^g^kZe Onkihl^ O387 =H>J

Contextual Info: NOTES: I. MATERIALS AND FINISHES: BODY - BRASS, GOL D PLATING .000003 THICK C O N T A C T - BRASS, GOL D PLATING (.000030 THICK) INSULATOR - P T F E , NATURAL 2. ELECTRICAL: A. I M P E D A N C E : 50 O H M B. F R E Q U E N C Y R A N G E : DC • 6 G H z

316 bcg

Abstract: Amphenol Assembly instructions 227-1221-03
Contextual Info: REVISIONS 908-41300 DRAWING NO. MOTES: 1. THI RD ANGLE MATERIALS BODY: CONTACT: RING: FERRULE: INSULATOR: PROJ. <§> €3 AND P L A T I N G : BRASS, GOLD PL AT ED BRASS, GOLD PLA T ED BERYLLIUM COPPER, GOLD PLATED COPPER A L L O Y , GOLD PLATED PTFE 2. FOR C A B L E S T R I P P I N G AND A S S E MB L Y

W9C 08

Abstract: marking W9C MT4C400
Contextual Info: SSE D MICRON TECHNOLOGY INC blllSMT □ 0 G S 7 M C1 3T7 M N R N MT4C4001J 883C 1 MEG X 4 DRAM IC Z R O N MILITARY DRAM 1 MEG X 4 DRAM FAST PAGE MODE PIN ASSIGNMENT Top View • SMD 5962-90847, Class M • JAN 5962-90847, Class B • MIL-STD-883, Class B

316 bcg

Contextual Info: SCALE 6.000 REVISIONS 908-41500 D R A W IN G NOTES : T H IR D ANGLE NO . PROJ. REV ^ ^ 1 . M A T E R I A L S AND P L A T I N G : BODY: C ONTACT : RING: FERRULE: INSULATOR: 2. B R A S S . GOL D P LAT ED B R A S S , GOL D P LAT ED B E R Y L L I U M C O P P E R , GO L D P L A T E D

amphenol 74868

Contextual Info: 908-41000 NOTES: I. MATERIALS AND FINISHES: BODY - BRASS, GOL D PLATING .000003 THICK C O N T A C T - BRASS, GOL D PLATING (.000030 THICK) INSULATOR - PTFE 2 . ELECTRICAL: A. I M P E D A N C E : 50 O H M B. F R E Q U E N C Y R A N G E : DC - 6 G H z C. V S W R ( R E T U R N L O S S ) : 1.3 ( 1 7 . 7 dB) MAX, D C - 3 GHz

AMPHENOL 999-226

Abstract: 999-226 amphenol 349-50702 999-226 x cap AMPHENOL+999-226
Contextual Info: 908-43715 DRAWING NOTES: TH 1 RD I. ANGLE R E V 1S I O N S REV NO. PRO J. A <§> P L A T I N G PER A M P H E N O L SPEC. 34 9 -5 0 56 0 . BODY - BRASS, GOL D PLATED C O N T A C T - BRASS, G O L D PLATED INSULATOR - PTFE f|> ^ C A P T O BE S U P P L I E D L O O S E . C A P T O BE

TA10E

Abstract: CI 4069 150w stk STK711 DI 761 STK760 STK752 ICT R7 27k 3kv jw 2200uf
Contextual Info: 1 1 • 1 bANYO l ^ p H P <$*&’■>/^gv STK711,752,760, 761,756 Na17U jnKaaXfltR> !H 9084 1 ■ 1 7 5 1 -J % < v i p j « p g i s s i } 1 "V ■7 y "/* v * .1 1/ - ? £««&#■#< 3 na© i c ic $ t » ■A 7 - h 9 > i>2 ? ti K 9 -f7 h -9 > t tflffitffi

Contextual Info: VfSMAY _BAV100.BAV103 ▼ Vishay Telefunken Silicon Epitaxial Planar Diodes Applications G eneral purposes 94 9371 Absolute Maximum Ratings Tj = 25°C Param eter Test C on ditio ns R epetitive peak reverse voltage Type S ym bol