FZ 98 Search Results

AEC UPS CIRCUIT DIAGRAM

Abstract: UFBK LSA-Plus pcb long range locators diagram SURGE ARRESTER spark gap UAK 2-PE fz 98 1500 6.3 17-BU FLT-35 VAL-MS 230 ST
Contextual Info: 210 216 FZ-bs FZ-bs DIN/0 FZ/0 USA/0 TRABTECH Basics USA/2 79 DIN/2 79 FZ-bs 216 210 FZ-bs DIN/0 FZ/0 USA/0 Author: Joachim Schimanski, Phoenix Contact This manual is copyrighted. The rights derived therefrom, in particular those of translation, reprinting, radio transmission,

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 33 KF2 vorläufiges Datenblatt preliminary datasheet Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung

FZ1200R12KL4C

Abstract: IGBT 1200A 600V
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 12 KL4C Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

FZ1800R17KF6B2

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1800 R 17 KF6 B2 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

2 F transistor

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1800 R 17 KF6 B2 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung

17kf6

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1600 R 17 KF6 B2 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung

IGBT FZ 1200

Abstract: IGBT 1200A IGBT FZ 1000 IGBT FZ 1800 KL4C transistor 600v FZ1200R12KL4C
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 12 KL4C vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1600 R 17 KF6 B2 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 12 KL4C vorläufige Daten prelim inary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage

IGBT 600V 1200A

Abstract: FZ1200R12KL4C IGBT 1200A 600V
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 12 KL4C vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage

Contextual Info: FZ 800 R 12 KF 1 Thermische Eigenschaften Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 800 A Thermal properties Rthjc DC, pro Baustein /p e r module 0,02 °C/W RthCK pro Baustein / per module 0,01 °C/W

Contextual Info: PNP SILICON PLANAR M ED IU M POWER HIGH GAIN TRANSISTOR FZ T 1 151A - ISSUE 1 - JANUARY 1997_ FEATURES * V c e o =-40V * 3 A m p C ontinuous Current * 5 A m p Pulse Current * * Lo w saturation Voltage High Gain SOT223

Contextual Info: fZ J SGS-THOMSON ^7# R L ie r a « B S S 6 4 SMALL SIGNAL NPN TRANSISTOR Type M arking BSS64 U3 . SILICON EPITAXIAL PLANAR NPN TRANSISTOR . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . GENERAL PURPOSE LOW FREQUENCY APPLICATIONS

800A

Contextual Info: FZ 800 R 12 KF 1 Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e rm o d u le 0,02 Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 800 A pro Baustein / per module Ic °C/W

Contextual Info: FZ 800 R 12 KF 1 Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e rm o d u le 0,02 Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 800 A pro Baustein / per module Ic °C/W

Contextual Info: Ref. No. 2000/10 000771 c /s j 4 /~ f £ C o ^ Z fZ . H B R N /S -2 Specification SC-HBRN 02 A Drawing No. JSA28712-1 * • FCI Japan K. K. Electronics Division Engineering Section Certified bv H. Takakura Manager, Engineering Section TOLERANCES UNLESS OTHERWISE SPECIFIED . ±0.2

Zener Z 5

Abstract: FX-D1 FX-D1P fx-a1 FX-mr5 FX-M1P FT-V41 FX-A1P FD-H20-M1 transistor WT4
Contextual Info: SERIES Slim Body Digital/Auto/Manual Setting Fiber Sensor FX-D1/A1/M1 PHOTOELECTRIC SENSORS FX-D1/A1/M1 FX-13 FX-11A Fiber Sensors Simple Operation with Innovative Jog Switch FZ-10 Marked Conforming to EMC Directive CX-20 Simple Operation FX-D1/A1 series Uses an innovative highly operable jog

mini circuits 15542

Abstract: MINI-CIRCUIT 15542 mini-circuits 15542
Contextual Info: REVISIONS DESCRIPTION THIRD ANGLE PROJECTION 4^ € 3 REV ECN No. OR OR Ml 11698 R68999 NEW RELEASE FROM RAVON NEW RELEASE (FROM RAVON) DATE D R AUTH 0 6 /0 7 0 6 /0 7 DK DK HH HH SUGGESTED MOUNTING CONFIGURATION FOR FZ 990 CASE STYLE, s k PIN CONNECTION.

L4962EA

Abstract: va1n ROE capacitor 220 Diode BYW 56
Contextual Info: fZ T *7 A S G S -T H O M S O N L4962 1,5A POWER SWITCHING REGULATOR • 1.5A OUTPUT CURRENT ■ 5.1V TO 40V OUTPUT VOLTAGE RANGE ■ PRECISE ± 2% ON-CHIP REFERENCE ■ HIGH SWITCHING FREQUENCY ■ VERY HIGH EFFICIENCY (UP TO 90%) ■ VERY FEW EXTERNAL COMPONENTS

Contextual Info: fZ J m rJM VNP35N07 VNP35N07FI S G S -T H O M S O N KfflOSIMDIIILiCTIMfflDIGI ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET A DV AN C E DATA TYPE Vclamp R d S o ii 11im VNP35N07/FI 70 V 0.028 n 35 A . . . . . . . . . . LINEAR C U RREN T LIMITATION

Contextual Info: fZ 7 S G S - T H O M S O N SD4701 RF & MICROWAVE TRANSISTO RS CELLULAR BASE STATION APPLICATIONS • DESIGNED FOR CLASS AB LINEAR OPERATION ■ COMMON EMITTER . INTERNAL INPUT/OUTPUT MATCHING ■ 26 VOLT, 960 MHz PERFORMANCE: P o u t = 45 W MIN. GAIN = 8.5 dB MIN.

Contextual Info: fZ ^ 7 • . ■ . ■ . 7 S G S -T H O M S O N SD1457 #. K M « « ® « ! RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION p OUT = 75 W MIN. WITH 10.0 dB GAIN PIN CONNECTION DESCRIPTION

IYB187E

Abstract: BG 5924 gp 845
Contextual Info: 31*~1 .IYB187E/ ;=-6474,<=:0 47<0:60/4,<0 98?0: :05,@ 1DANOLDM U 54dU bfinel^ pbmalmZg] ohemZ`^ Ebe^ Mh2> D5778<5 .[^mp^^g \hbe Zg] \hgmZ\ml/ U Gb`aer ^_b\b^gm fZ`g^mb\ \bk\nbm _hk ab`a l^glbmbobmr> 644fV Ebe^ Mh2> 84446664 U BeZll E bglneZmbhg lmZg]Zk] U Dqmk^f^er lfZee _hhmikbgm nmbebsbg` OBA Zk^Z

IC2500

Abstract: FZ 800 R 12 KF6
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 1600 R 17 KF6 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be done 06.04.1998