FZ 44 NS Search Results

APD 4115

Abstract: TT 2146 1030h spns014b SE370C792 saj 100 "TMS370 Family Data Manual" ELLS 110 AN10 TMS370
Contextual Info: TMS370Cx9x 8-BIT MICROCONTROLLER S PN S036A - JANUARY 1996 - R EV ISE D MARCH 1996 FN AND FZ PACKAGES {TO P V IE W & C <D O - < < < !- I li I I II I I II l i I l I l Il Il \ -, 6 5 4 3 2 1 44 43 42 41 40 „ RESET ] 7 39 [ M C INT1 ] 38 [ T1 IC /C R 8 9

bit-slice

Abstract: SMJ32010
Contextual Info: SMJ320E14 DIGITAL SIGNAL PROCESSOR FEBRUARY 1990 68-PIN FZ PACKAGE LEADED CERAMIC CHIP CARRIER TOP VIEW 200-ns Instruction Cycle 256-Word On-Chip Data RAM a s 4K-Word On-Chip Program EPROM 0. O CM Û - Q - - EPROM Code Protection for Security 4K-Word Total External Memory at Full

Contextual Info: S G S -T H O M S O N iMiniSiRitaignigfafiRiOBinieg 74LCX16240A LOW VOLTAGE CMOS 16-BIT BUFFER 3-STATE INV. WITH 5V TOLERANT INPUTS AND OUTPUTS PRELIM IN ARY DATA . 5V TOLERANT INPUTS AND OUTPUTS . HIGHSPEED: tPD =4.9 ns (MAX.) at Vcc = 3.0V . POWER-DOWN PROTECTION ON INPUTS

Contextual Info: S G S -1 H M S 0 N IM O ig œ iIL liera *® 74LC X16245A LOW VOLTAGE CMOS 16-BIT BUS TRANSCEIVER 3-STATE WITH 5V TOLERANT INPUTS AND OUTPUTS . 5V TOLERANT INPUTS AND OUTPUTS . HIGHSPEED: tPD = 4.5 ns (MAX.) at Vcc = 3.0V . POWER-DOWN PROTECTION ON INPUTS

74LCX16245

Contextual Info: S G S -1 H M S 0 N IMOigœiILliera *® 74LCX16245 LOW VOLTAGE CMOS 16-BIT BUS TRANSCEIVER 3-STATE WITH 5V TOLERANT INPUTS AND OUTPUTS . 5V TOLERANT INPUTS AND OUTPUTS . HIGHSPEED: tPD = 4.5 ns (MAX.) at Vcc = 3.0V . POWER-DOWN PROTECTION ON INPUTS AND OUTPUTS

TMS320P14

Abstract: led E14 TMS320C14 TMS320E14
Contextual Info: TMS320C14, TMS320E14, TMS320P14 DIGITAL SIGNAL PROCESSORS JA N U A R Y 1987 — REVISED JULY 1991 Key Features: TMS320C14/E14/P14 GND +5 V i_ t 160-ns In stru ctio n Cycle 256 W ords o f O n-C hip Data RAM 256-W ord RAM In te rru p t 4K W ords o f O n-C hip Program ROM

ST C732

Abstract: SE370C758B induction cooker circuit diagram diode c722 st u c756 TMS 370 BP-1148TI turpro 840 manual TMS370 Microcontroller Family Users Guide SE370C712A
Contextual Info: TMS370 Microcontroller Family Extract Data Book 1997 8-Bit Microcontroller Family Printed in U.S.A., March 1997 SPND005 General Information 1 Quality and Reliability 2 Electrostatic Discharge Guidelines 3 Mechanical Data 4 TMS370 Microcontroller Family Data Book

Contextual Info: SGS-THOMSON RfflDeiE!<s [l[L[ie,n’[KÌ@RDD S$ BUH315D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. F IL E # E817 3 4 (N) NPN TRANSISTOR WITH INTEGRATED

bd556

Abstract: 68hc705k1 MC68HC05SC21 68hc705j2 68hc05 test board 68HC705E6 M68HC05P9EM pinout of motorola 68hc05 programmer mc68hc705b16 68HCL05
Contextual Info: Single–Chip Microcontrollers CSIC In Brief . . . Page M68HC05 CSIC Family . . . . . . . . . . . . . . . . . . . . . . . . . 2.5–2 M68HC08 Family . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5–13 Development Tools . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5–14

capacitor fz

Abstract: LP38512TJ-ADJ 1210ZC106KAT2A AN-1378 C0805C332K5RAC 1802 AN-1802
Contextual Info: National Semiconductor Application Note 1802 Don Jones January 23, 2009 TABLE 1. Introduction This board is designed to allow the evaluation of the LP38512TJ-ADJ Voltage Regulator. Each board is assembled and tested in the factory. This evaluation board has the

CRCW080510K0FK

Abstract: 1210ZC106KAT2A AN-1378 C0805C332K5RAC LP38511TJ-ADJ AN1801 cff 5 pin AN-1801
Contextual Info: National Semiconductor Application Note 1801 Don Jones January 23, 2009 TABLE 1. Introduction This board is designed to allow the evaluation of the LP38511TJ-ADJ Voltage Regulator. Each board is assembled and tested in the factory. This evaluation board has the

LP38513TJ-ADJ/NOPB

Abstract: 300-273 1210ZC106KAT2A AN-1378 C0805C332K5RAC LP38513TJ-ADJ 10809 AN1670
Contextual Info: National Semiconductor Application Note 1670 Don Jones January 23, 2009 TABLE 1. Introduction This board is designed to allow the evaluation of the LP38513TJ-ADJ Voltage Regulator. Each board is assembled and tested in the factory. This evaluation board has the

Contextual Info: SGS-THOMSON HD E[fil IILICÎ^(â IKlDSl ST9040 16K ROM HCMOS MCU WITH EEPROM, RAM AND A/D CONVERTER • Register oriented 8/16 bit CORE with RUN, WFI and HALT modes ■ Minimum instruction cycle time : 500ns (12MHz internal) ■ Internal Memory : ROM 16K bytes

TMS3708

Abstract: BP-1148TI TMS370C002A TMS370 turpro 840 manual CDT370 SPNU127 induction cooker fault E1 VLSI Vision 1011 circuit diagram induction cooker
Contextual Info: Texa s In s tr u m e n ts TMS370 Microcontroller Family Extract Da fa 7997 8-Bit Microcontroller Family ^ Te xa s In s t r u m e n t s General Information Quality and Reliability Electrostatic Discharge Guidelines Mechanical Data TMS370 Microcontroller Family

Double acting cylinder

Abstract: D-A73 DA73 CQ-L040 CQ2B12-S-PS C 10 ST CQ2B63-PS D-A80 CQ-D032 CQ-F080
Contextual Info: Series Compact Cylinder: Standard Type Double Acting, Single Rod CQ2 Compact Cylinder: Standard Type, Single Rod CQ2 Series ø12, ø16, ø20, ø25, ø32, ø40, ø50, ø63, ø80, ø100, ø125, ø140, ø160, ø180, ø200 Unique range of products and sizes Compact, light weight, space-saving design

ST90T27B6

Abstract: ST90T27 ST90E27 CDIP40-W st90t28b SGS microcontroller 33WH CLCC44-W
Contextual Info: SGS-THOMSON HD E^ IILICÎ^(â IKlDei 16 K EPROM ST90E27/T27 ST90E28/T28 HCMOS MCUs WITH RAM • Register oriented 8/16 bit CORE with RUN, WFI and HALT modes ■ Minimum instruction cycle time: 500ns (12MHz internal) ■ Internal M em ory: EPROM 16Kbytes RAM

AN-1409

Abstract: u2 ic JMK316BJ475MD LMK325BJ106MN LP3878-ADJ LP3878SD-ADJ CASE-806
Contextual Info: National Semiconductor Application Note 1409 Chester Simpson October 2005 Introduction Basic Application Circuit The LP3878-ADJ is an 800 mA low-dropout linear regulator whose output voltage can be externally set to any value between 1V and 5.5 V using two resistors. This application

Contextual Info: S G S -T H O M S O N RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ S T P 4 N A 100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYP E V dss S T P 4 N A 1 00 1000 V R dS(oii) <3. 5 Q. Id 4.2 A . • TYPICAL RDS(on) =2.9 ± 30V GATE TO SOURCE VOLTAGE RATING

transistor BUZ20

Abstract: BUZ20
Contextual Info: fZ T SGS-THOMSON HD g(^ (ilL(i(g'ir»M(gi B U Z20 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^D S(on BUZ20 100 V 0.2 ß 12 A • 100 VOLTS - FOR UPS AP PLICATIO NS • ULTRA FAST SW ITCHING • RATED FOR UNCLAM PED INDUCTIVE SW ITCHING (ENERGY TEST) ♦

Contextual Info: Æ T SGS-THOMSON n lsi S IIL[iCTIsî iD©S 2N4033 GENERAL PURPOSE AMPLIFIER AND SWITCH DESCRIPTION The 2N4033 is a silicon planar epitaxial PNP transistors in Jedec TO-39 metal case primary intended for large signal, low noise industrial applications. INTERNAL SCHEMATIC DIAGRAM

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7^4142 IRFZ44/45 IRFZ40/42 QD124SD TES ■ SIIGK N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s o n Improved inductive ru gge d n e ss Fast sw itching tim es R u g g e d polysilicon gate cell structure

AN1560

Abstract: R1R210 U 1560 0805YC103KAT2A 0805ZC105KAT2A 1210ZC106KAT2A LP38852 LP38852MR-ADJ LP38853 fz 69
Contextual Info: 美国国家半导体公司 应用注释 1560 Don Jones 2006年12月 CFF = 1 / 2 x π x FZ x R1 引言 设计该电路板用来对LP38852MR-ADJ电压稳压器芯片 进行评估。每块电路板都由原厂安装并经过测试。该评估板 采用PSOP-8引脚封装，输出电压设定为1.20V。

IRFZ44

Abstract: IRFZ45 IRFZ44 mosfet IRFZ42 IRFZ44 MOSFETs IRFz44 n-channel MOSFET IRFZ40
Contextual Info: IRFZ44/45 IRFZ40/42 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s o n Improved inductive ru gge d n e ss Fast sw itching tim es R u g g e d polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

Contextual Info: HB526R864ESN-10H/10/12 4,194,304-word x 64-bit Non Parity x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-671A (Z) Rev. 1.1 Feb. 20, 1997 Description The HB526R864ESN belongs to 8 byte DIMM (Dual In-line Memory Module) family, and has been developed a as optimized main memory solution for 8 byte processor applications. The HB526R864ESN is