FXS 100 10 Search Results

voip CIRCUIT DIAGRAM

Abstract: CT-P51AX01-LA CT-P51AX01 voip ethernet single chip TR-048 circuit diagram of wifi router VCCS protocol VLIW architecture TR-037 G.711 CHIP SET
Contextual Info: Palladia 400 CT-P77SI22/CT-P57SI22 Integrated CPE ADSL VoIP Gateway High Performance ADSL2/2+/2+ CPE Integrated Voice DSP Robust Voice/Firewall/VPN/Router Stack Hardware Encryption Accelerator Enhanced IPQoS PCI WiFi Ready Two 10/100 Ethernet MAC interfaces

RJ11 to 3.5mm jack adapter

Abstract: rj11 plug to 3.5mm KSZ8041 TLV320AC23 PHONE JACK, MINI 3.5mm fxs 100 10 M54451EVB 6 pin 3.5mm stereo microphone jack 28F128P33 JP15
Contextual Info: D O C - 0 4 3 9 - 0 1 0 , R E V . D M54451EVB Development Board for Freescale MCF54451 MCU Hardware User Manual PRELIMINARY ٛ Axiom Manufacturing • 1226 Exchange Drive • Richardson, TX 75081 Email: Sales@axman.com Web: http://www.axman.com ٛ M 5 4 4 5 1 E V B

Contextual Info: intelligent Multiservice Gateways PRODUCT INFORMATION iMG1400 Series Gigabit FTTH Multiservice GatewayS The iMG1400 Series intelligent Multiservice Gateways, part of the Allied Telesis iMG family, provide IPTV and broadband services with optional voice and fiber to RF transceivers.

ISO10173

Abstract: aui rj45 NPB1FC1865NPB1 G723.1 acelp DA128 fxs 100 10 ISO8877 lrx2030
Contextual Info: 富士通Compact FRAD EW4100 シリーズ 総合カタログ ネットワークコスト削減のベストソリュ 効率的なネットワーク構築ならCompa いま企業ネットワークは インターネットの 急速な普及による情報量の 増加などの 影響によって、

rj1cx modular plug

Abstract: BABT340 330 e57 E43 marking pstn FXO dtmf telephone interface schematic X5678 X5678 CIRCUITS DIAGRAM plc analog em 231 cisco 1002
Contextual Info: V/IP Phone/Fax IP Gateway Analog Models Microsoft Windows 95 User’s Manual Part Number 800-1887-11, Rev. B October 1997 Notice of Filing Declaration of CE Conformance for International sales A Declaration of CE Conformance is on file at the MICOM addresses shown below.

73M1906

Abstract: 78Q8430 fxs 100 10 73M1966B 78Q2123 fxs spi 73M1916 VOIP PROCESSORS 73M1866B ISO7816
Contextual Info: 73M1x66B VOIP Foreign Office Exchange FXO Device Family 73M1866B is the world’s first single package FXO, ideal for high density Enterprise VOIP Gateways. The 73M1966B is the worlds only FXO providing a single external Bill of Materials that meets worldwide homologation

package style TO-18

Contextual Info: discrete sensors phototransistors OED-ST-1MLAR2 RHekogfa Styie TO -18 2 Leads Black Lens Ic mA @ E\t ~ Limits of Sate Operation ICEO PC @ I O V ceo Vceo (V)Max 40 Lens (mW) Max 100 t-opr fC ) -25 ~ + 85 (nA) Max 100 1000 L X MUl Typ Max Vce(V) Xp (nm) Typ

Contextual Info: February 1988 M M 54C 1 75 /M M 7 4C 1 75 Quad D Flip-Flop General Description The MM54C175/MM74C175 consists of four positive-edge triggered D type flip-flops implemented with monolithic CMOS technology. Both are true and complemented out­ puts from each flip-flop are externally available. All four flipflops are controlled by a common clock and a common

Contextual Info: inteT « O G » « ? 27C202 Fast Word-Wide 256K 16K x 16 EPROM High Speed — 70 ns Access Time Maximizes CPU Performance Rapid Programming — 4 Second Throughput for Automated Manufacturing Low-Power CHMOS* — 100 mA Active, 15 mA Standby Simple Interfacing

NE534

Abstract: NE534-BA
Contextual Info: SE553-BA.F • N E553-BA.F • SE554-BA.F • NE534-BA.F FEATURES APPLICATIONS . 100mA OUTPUT CURRENT PER SEC­ TION • EDGE-TRIGGERED NO COUPLING CAPACITOR • OUTPUT INDEPENDENT OF TRIGGER CONDITIONS • WIDE SUPPLY VOLTAGE RANGE 4.5V TO 16V • TIMER INTERVALS FROM M ICRO­

cd40174b

Abstract: 40174B 40175B 40174BD CD40xx
Contextual Info: . February 1988 CD40174BM/CD40174BC Hex D Flip-Flop CD40175BM/CD40175BC Quad D Flip-Flop General Description The C D40174B consists o f six positive-edge triggered D-type flip-flops; th e true o utputs fro m each flip-flo p are e x­ te rn a lly available. The C D40175B co nsists of fo u r positiveedge triggered D-type flip-flops; b oth th e true and co m ple ­

ixp435

Abstract: Si3050-FT KENDIN KSZ8995M PNX1702EH/G rt9214 PC28F128J3D PNX1702 TM3260 SI3201-FS IXDP465
Contextual Info: Intel IXP435 Multi-Service Residential Gateway Reference Platform User’s Guide June 2007 Document Number: 316848; Revision: 001US INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR

Contextual Info: FXS CONNECTOR 0.3mm Emboss Tape Connectors for FPC .012" pitch Features–––––––––––––––––––––––– • Space saving design Compared to the conventional 0.3mm (.012") pitch connector, the height and depth are reduced, yet maintain equivalent

el1010

Abstract: EL2070
Contextual Info: - 328 - ¡mm, EL2070/C •-3dElwWi:200MHz Av=2 h:700V/^s (Av=+2) •Av= +1~±8 •ffifflfè -t fi V Y • a - x I \/ DIP an d SO P ack age T op View a s, elantee • s % w n E L 2 0 7 0 /C e Vs=±5V ±7 RL'100 ±Vs V Ta=25‘C 5 V ÍÍJ ^ ìan S EL2070:-55—-+125

P1010-RDB

Contextual Info: QorIQ Multicore Processor Development QorIQ P1010/P1014 Reference Design Board Overview The P1010RDB is a highly integrated reference design board that can help shorten your time to market. The reference design is aimed at low-cost networking applications with or without trust architecture , wired and wireless access, as well as

Contextual Info: Semiconductor NM93CS06L/CS46L/CS56L/CS66L 256-/1024-/2048-/4096-Bit Serial EEPROM with Extended Voltage 2.7V to 5.5V and Data Protect (MICROWIRE Bus Interface) General Description The NM93CS06L/CS46L/CS56L/CS66L devices are 256/1024/2048/4096 bits, respectively, of non-volatile

Contextual Info: BIG POWER” M M • PowerTecn HO AMPERES PT-4503 PT-4504 HIGH VOLTAGE SILICON IMPIMTRANSISTOR TYPE PT-4503 PT-4504 Collector-Base Voltage, Vq q q 450V 500V C ollector-E m itter Voltage, V q ^ q 400V 450V ABSO LU TE MAXIMUM RATINGS 10V Emitter-Base Voltage, VEB q

ultra low power mosfet fast switching

Abstract: OM6229SP2 50 Amp 100 volt mosfet
Contextual Info: OM6229SP2 FOUR UNCOMMITTED POWER MOSFETS, ULTRA LOW RDS on IN PLASTIC PACKAGES Four 100 Volt, Up To 60 Amp Ultra Low R ds (oii) Power MOSFETs In Isolated Package FEATURES • • • • • Four Uncommitted MOSFETs In Low Profile Power Package Isolated Heat Sink Package

Contextual Info: J nixY S IXTH14N100 VDSS MegaMOS FET D25 RDS on N -C h a n n e l = 1000 V = 14 A = 0.82 Q E n h a n c e m e n t M o d e m Symbol Test Conditions v T j = 25 °C to 150°C 1000 V v DGR ^ 1000 V VGS Continuous ±20 V v T ransient +30 V DSS GSM Maximum Ratings

VDE0303

Abstract: TCR100
Contextual Info: SIEMENS FEATURES BRT11/12/13 SITAC AC SWITCHES OPTOCOUPLER Package Dimensions in Inches mm f? l • Vdrm=400 to 800 V f^ l , pin one .248 (6 30) .256 (6.50) • Itb m s = 3 0 0 m A • d v /d tcr>10 ,0 0 0 V /|is • Electrically Insulated Between Input and

BCM6362

Abstract: bcm6328 BCM4313 Broadcom WLAN bcm4313 BCM96328 bcm6358 BCM6368 BROADCOM BCM6368 BCM53101 BROADCOM BCM4313
Contextual Info: White Paper BCM63XX/BCM68XX Power Management This document reviews the regulations published by the European Union on maximum consumption targets for energy-consuming devices and describes how Broadcom has addressed these regulations in its BCM63XX and BCM68XX line of products for DSL and GPON modems.

PTC2000

Abstract: ptc 2000
Contextual Info: Series PTC 2 0 0 0 PTC 2001 NPN Silicon Power Darlington Transistors 50 Amperes • 1000 Volts FEA TURES • Isolated Collectors • High Voltage Rating - 1000 Volts • Glass Passivated Die to Provide Excellent High Temperature Stability APPLICATIONS • High Current Switching Power Supplies

Contextual Info: • 25E D N AMER PHILIPS/DISCRETE bb53T31 OQnbfil 2 ■ BDT31; A BDT31B; C T '- S 3 - II SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended for use in audio output stages and general amplifier and switching applications. The TIP31 series is an equivalent type. P-N-P complements are BDT32 series.

S.S.2

Abstract: 2SC4471 2SC4471A
Contextual Info: Power Transistors 2SC4471, 2SC4471A 2SC4471, 2S C 4471A Silicon NPN Triple-Diffused Planar Type P ackage Dim ensions High B reakdown Voltage, High S p eed Switching U n it : mm 4.4m ax. 10.2max. 5.7m ax. • Features • High speed switching 2.9 max. I- • High collector-base voltage V c b o