FUSE 239 SMD Search Results
FUSE 239 SMD Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| TCKE800NA |
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eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B | Datasheet | ||
| TCKE800NL |
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eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B | Datasheet | ||
| TCKE805NA |
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eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, Fixed Over Voltage Clamp, WSON10B | Datasheet | ||
| TCKE805NL |
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eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, Fixed Over Voltage Clamp, WSON10B | Datasheet | ||
| TCKE812NA |
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eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, Fixed Over Voltage Clamp, WSON10B | Datasheet |
FUSE 239 SMD Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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MIW5032
Abstract: MIW5022 MIW5000 fuse smd 50ma MIW5026 MIW5021 mIw5 MIW5023
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MIW5000 1500VDC CSA1950 EN55022 MIW5000-Series 9-18VDC, 18-36VDC 36-75VDC EN55022 15VDC. MIW5032 MIW5022 fuse smd 50ma MIW5026 MIW5021 mIw5 MIW5023 | |
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Contextual Info: PRELIMINARY V•I Chip Bus Converter Module BCM B048F160T24 V•I Chip – BCM Bus Converter Module TM • 48 V to 16 V V•I Chip Converter • Typical efficiency 96% • 240 Watt 360 Watt for 1 ms • 125°C operation • High density – 876 W/in3 |
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B048F160T24 | |
5252 F 0911
Abstract: sm4500 fuse smd code N pico fuse color code mcr 5102 4501 gsd Si 6822 5252 F 1004 mr 6710 fuse smd code P
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CRG1/2003 5252 F 0911 sm4500 fuse smd code N pico fuse color code mcr 5102 4501 gsd Si 6822 5252 F 1004 mr 6710 fuse smd code P | |
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Contextual Info: PRELIMINARY V048F020T080 VTM V•I Chip – VTM Voltage Transformation Module • 48 V to 2 V V•I Chip Converter • 125°C operation • 80 A 120 A for 1 ms • 1 µs transient response • High density – 292 A/in3 • 3.5 million hours MTBF • Small footprint – 70 A/in2 |
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V048F020T080 V048F020T080 | |
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Contextual Info: PRELIMINARY V•I Chip Bus Converter Module BCM B048F480T30 V•I Chip – BCM Bus Converter Module TM • 48 V to 48 V V•I Chip Converter • Typical efficiency 96% • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – 1095 W/in3 |
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B048F480T30 | |
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Contextual Info: PRELIMINARY V•I Chip Bus Converter Module BCM B048F240T30 V•I Chip – BCM Bus Converter Module TM • 48 V to 24 V V•I Chip Converter • Typical efficiency 96% • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – 1095 W/in3 |
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B048F240T30 | |
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Contextual Info: PRELIMINARY V048F120T025 VTM V•I Chip – VTM Voltage Transformation Module • 48 V to 12 V V•I Chip Converter • 125°C operation • 25 A 37.5 A for 1 ms • 1 µs transient response • High density – 1095 W/in3 • 3.5 million hours MTBF • Small footprint – 270 W/in2 |
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V048F120T025 V048F120T025 | |
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Contextual Info: PRELIMINARY V•I Chip Bus Converter Module B352F110T24 BCM V•I Chip – BCM Bus Converter Module TM • 352 V to 11.0 V V•I Chip Converter • Typical efficiency 95% • 240 Watt 360 Watt for 1 ms • 125°C operation • High density – up to 876 W/in3 |
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B352F110T24 | |
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Contextual Info: PRELIMINARY V•I Chip Bus Converter Module B384F120T24 BCM V•I Chip – BCM Bus Converter Module TM • 384 V to 12 V V•I Chip Converter • Typical efficiency 95% • 240 Watt 360 Watt for 1 ms • 125°C operation • High density – up to 876 W/in3 |
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B384F120T24 | |
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Contextual Info: PRELIMINARY V048F480T006 VTM V•I Chip – VTM Voltage Transformation Module • 48 V to 48 V V•I Chip Converter • 125°C operation • 6.3 A 9.4 A for 1 ms • 1 µs transient response • High density – 1095 W/in3 • 3.5 million hours MTBF • Small footprint – 270 W/in2 |
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V048F480T006 V048F480T006 | |
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Contextual Info: PRELIMINARY V048F040T050 VTM V•I Chip – VTM Voltage Transformation Module • 48 V to 4 V V•I Chip Converter • 125°C operation • 50 A 75 A for 1 ms • 1 µs transient response • High density – 182 A/in3 • 3.5 million hours MTBF • Small footprint – 45 A/in2 |
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V048F040T050 V048F040T050 | |
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Contextual Info: PRELIMINARY V040F033T060 VTM V•I Chip – VTM Voltage Transformation Module • 40 V to 3.3 V V•I Chip Converter • 125°C operation • 60 A 90 A for 1 ms • 1 µs transient response • High density – 730 W/in3 • 3.5 million hours MTBF • Small footprint – 180 W/in2 |
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V040F033T060 V040F033T060 | |
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Contextual Info: PRELIMINARY V048F060T040 VTM V•I Chip – VTM Voltage Transformation Module • 48 V to 6 V V•I Chip Converter • 125°C operation • 40 A 60 A for 1 ms • 1 µs transient response • High density – 876 W/in3 • 3.5 million hours MTBF • Small footprint – 210 W/in2 |
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V048F060T040 V048F060T040 | |
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Contextual Info: PRELIMINARY V048F160T015 VTM V•I Chip – VTM Voltage Transformation Module • 48 V to 16 V V•I Chip Converter • 125°C operation • 15 A 22.5 A for 1 ms • 1 µs transient response • High density – 876 W/in3 • 3.5 million hours MTBF • Small footprint – 210 W/in2 |
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V048F160T015 V048F160T015 | |
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Contextual Info: PRELIMINARY V048F240T012 VTM V•I Chip – VTM Voltage Transformation Module • 48 V to 24 V V•I Chip Converter • 125°C operation • 12.5 A 18.8 A for 1 ms • 1 µs transient response • High density – 1095 W/in3 • 3.5 million hours MTBF |
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V048F240T012 V048F240T012 | |
V048F040T050
Abstract: VTM 48
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V048F040T050 V048F040T050 VTM 48 | |
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Contextual Info: PRELIMINARY V048F030T070 VTM V•I Chip – VTM Voltage Transformation Module • 48 V to 3 V V•I Chip Converter • 125°C operation • 70 A 105 A for 1 ms • 1 µs transient response • High density – 766 W/in3 • 3.5 million hours MTBF • Small footprint – 190 W/in2 |
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V048F030T070 V048F030T070 | |
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Contextual Info: V•I Chip – BCM Bus Converter Module TM B048K120T20 + + –K – • >96% efficiency • 200 Watt 300 Watt for 1 ms • 125°C operation • High density – up to 800 W/in3 • 1 µs transient response • Small footprint – 200 W/in • >3.5 million hours MTBF |
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B048K120T20 02/04/10M | |
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Contextual Info: m U U HM-6642 HARRIS S E M I C O N D U C T O R 512 x 8 CMOS PROM January 1992 Features Description • Low Power Standby and Operating Power The HM-6642 is a 512 x 8 CMOS NiCr fusible link - ICCSB. 100 iA Programmable Read Only Memory in the popular 24 pin, |
OCR Scan |
HM-6642 HM-6642 120/200ns than50pF, | |
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Contextual Info: BCM V•I Chip – BCM Bus Converter Module TM B048K096T24 K indicates BGA configuration. For other mounting options see Part Numbering below. • 48 V to 9.6 V V•I Chip Converter • >96% efficiency • 240 Watt 360 Watt for 1 ms • 125°C operation |
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B048K096T24 10/04/10M | |
JESD22-A110-B HIGHLY ACCELERATED TEMPERATURE AND
Abstract: JESD22-A-108-B B048K120T20
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B048K120T20 07/04/10M JESD22-A110-B HIGHLY ACCELERATED TEMPERATURE AND JESD22-A-108-B B048K120T20 | |
JESD22-B-104-A
Abstract: J-STD-029 SMD TRANSISTOR MARKING 2.x
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B048K096T24 06/04/10M JESD22-B-104-A J-STD-029 SMD TRANSISTOR MARKING 2.x | |
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Contextual Info: V•I Chip – BCM Bus Converter Module TM B048K480T30 + + –K – • >97% efficiency • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1165 W/in3 • <1 µs transient response • Small footprint – 280 W/in • >3.5 million hours MTBF |
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B048K480T30 P/N27688 06/04/10M | |
smd RO25Contextual Info: V•I Chip – BCM Bus Converter Module TM B048K120T20 + + –K – • >96% efficiency • 200 Watt 300 Watt for 1 ms • 125°C operation • High density – up to 800 W/in3 • 1 µs transient response • Small footprint – 200 W/in • >3.5 million hours MTBF |
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B048K120T20 06/04/10M smd RO25 | |