FUJITSU FLM 150 Search Results

FUJITSU FLM 150 Result Highlights (5)

Part	Manufacturer	Description	Download
FLMP22W0	Amphenol Communications Solutions	Receptacle, FLM Series, Zhaga Book 20, LEX-MR Right Angle SMT, Pin Contacts White	PDF
FLMP2200	Amphenol Communications Solutions	Receptacle, FLM Series, Zhaga Book 20, LEX-MR Right Angle SMT, Pin Contacts, Black	PDF
FLMP23W0	Amphenol Communications Solutions	Receptacle, FLM Series, Zhaga Book 20, LEX-MR, Poke-In Wire Termination, Pin Contacts, White	PDF
UE86D622710621	Amphenol Communications Solutions	2X6 SFP COMBO W/ LP & FILM	PDF
FLMS2300	Amphenol Communications Solutions	Plug, FLM Series, Zhaga Book 20, LEX-LP, Poke-In Wire Termination, Socket Contacts, Black	PDF

FUJITSU FLM 150 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: FLM1415-6F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P ^ b = 37.0dBm Typ. High Gain: G ^ g = 5.5dB (Typ.) High PAE: riadd = 20% (Typ.) Low IM3 = -45dBc@Po = 26.0dBm (Typ.) Broad Band: 14.5 ~ 15.3GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM1415-6F -45dBc 1415-6F FCSI0598M200	PDF
FLM1011-4C Abstract: Fujitsu FLM 150 1011-4C Contextual Info: nm-rcii FLM1011-4C r U JI1bU Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 35.5dBm Typ. • • • • • High Gain: G-j^B = 6.0dB (Typ.) High PAE: riadd = 24% (Typ.) Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM1011-4C FLM1011-4C 1011-4C 1100mA Fujitsu FLM 150 1011-4C	PDF
Contextual Info: FLM1414-8F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P ^ b = 39.0dBm Typ. High Gain: G ^ b = 6.0dB (Typ.) High PAE: riadd = 27% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM1414-8F -46dBc FLM1414-8F FCSI0598M200	PDF
FLM1213-4C Abstract: GaAs FETs fujitsu gaas fet N32C microwave databook Contextual Info: p. FLM1213-4C . J Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 35.5dBm Typ. • • • • • High Gain: G-j^B = 5.0dB (Typ.) High PAE: riadd = 22% (Typ.) Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed	OCR Scan	FLM1213-4C FLM1213-4C 1100mA 1213-4C J11jU GaAs FETs fujitsu gaas fet N32C microwave databook	PDF
0910-4C Abstract: 09104 Contextual Info: FLM 0910-4C Internally Matched Power CìaAs I E l s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage vgs -5 V 25 w -65 t o +175 °c 175 °c Total Power Dissipation pt	OCR Scan	0910-4C Brea142 27dBm 25dBm 23dBm 0910-4C 09104	PDF
1213-6F Contextual Info: F\| .ft . FLM1213-6F i Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 37.5dBm Typ. • High Gain: G-j^B = 7.0dB (Typ.) • High PAE: r iadd = 27% (Typ.) • Low IM3 = -45dBc@Po = 25dBm • Broad Band: 12.7 ~ 13.2GHz • Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM1213-6F -45dBc 25dBm FLM1213-6F VD600 1213-6F J11jU 1213-6F	PDF
Fujitsu FLM 150 Abstract: 5964-6D Contextual Info: FLM 5964-6D Internally Matched Power CiaAs I 'E l s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage vds 15 V Gate-Source Voltage vgs -5 V 31.2 w °c Total Power Dissipation Tc = 25°C pt Storage Temperature	OCR Scan	5964-6D Voltag50 26dBm 24dBm 22dBm Fujitsu FLM 150 5964-6D	PDF
Contextual Info: FLM3742-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 44.5dBm Typ. High Gain: G ^ b = 10.5dB (Typ.) High PAE: riadd = 41% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM3742-25F -46dBc 3742-25F FCSI0499M200	PDF
FLM7179-12F Abstract: cq 443 fet 2819 18 g Contextual Info: FLM7179-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 41 -506171 Typ. High Gain: G ^ b = 9.0dB (Typ.) High PAE: riadd = 38% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	-46dBc FLM7179-12F FLM7179-12F FCSI0599M200 cq 443 fet 2819 18 g	PDF
Contextual Info: FLM5964-4F C-Band Internally Matched FET FEATURES • • • • High Output Power: P ^ b = 36.5dBm Typ. High Gain: G ^ b =10.0dB (Typ.) High PAE: riadd = 37% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM5964-4F -46dBc 5964-4F FCSI0598M200	PDF
Contextual Info: FLM1415-3F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P ^ b = 34.5dBm Typ. High Gain: G ^ b = 5.5dB (Typ.) High PAE: r!add = 23% (Typ.) Low IM3 = -46dBc@Po = 23.5dBm (Typ.) Broad Band: 14.5 ~ 15.3GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM1415-3F -46dBc 1415-3F FCSI0598M200	PDF
cq 838 Abstract: FLM7179-6F CQ 539 Contextual Info: FLM7179-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 38.5dBm Typ. High Gain: G ^ b = 9.0dB (Typ.) High PAE: riadd = 34% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	-46dBc FLM7179-6F FLM7179-6F FCSI0598M200 cq 838 CQ 539	PDF
Contextual Info: FLM7785-12F C-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 41 -506171 Typ. • High Gain: G ^ b = 8.5dB (Typ.) • High PAE: riadd = 34% (Typ.) • Low IM3 = -46dBc@Po = 30.5dBm • Broad Band: 7.7 ~ 8.5GHz • Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM7785-12F -46dBc 7785-12F FCSI0599M200	PDF
FLM4450-25DA Abstract: FLM4450-25D Contextual Info: F, . FLM4450-25DA r UJ11 j U Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 44dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: r!add = 35% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM4450-25DA 44dBm -45dBc 32dBm FLM4450-25DA FLM4450-25D	PDF

Contextual Info: FLM3742-18DA FI f e l l J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 42.5dBm Typ. High Gain: = 10.5dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po =31.5dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM3742-18DA -45dBc 3742-18D	PDF
Contextual Info: FLM1414-2 co FUJITSU Internally Matched Power GaAs FETs FEATURES • High Output Power: P ^ b = 33.5dBm Typ. • High Gain: G ^ b = 5.0dB (Typ.) • High PAE: riadd = 24% (Typ.) • Broad Band: 14.0 ~ 14.5GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed	OCR Scan	FLM1414-2	PDF
5964-6D Contextual Info: F, . FLM5964-6D r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 38.0dBm Typ. High Gain: G ^ b = 10.0ÒB (Typ.) High PAE: r!add = 36% (Typ.) Low IM3 = -45dBc@Po = 27dBm Broad Band: 5.9 ~ 6.4GHz	OCR Scan	FLM5964-6D -45dBc 27dBm 5964-6D	PDF
FLM0910-4C Contextual Info: FLM0910-4C FUJITSU Internally Matched Power GaAs FETs FEATURES • High Output Power: P ^ b = 36dBm Typ. • High Gain: G ^ b = 7.5dB (Typ.) • High PAE: riadd = 30% (Typ.) • Broad Band: 9.5 ~ 10.5GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed	OCR Scan	FLM0910-4C 36dBm 0910-4C FLM0910-4C	PDF
1414-6F Abstract: 2620D 14K4 Contextual Info: FLM1414-6F FUJITSU Internally M atched Power GaAs FETs FEATURES • High Output Power: P-idg = 37.5dBm Typ. • High Gain: G -j^B = 6.0dB (Typ.) • High PAE: r iadd = 26% (Typ.) • Broad Band: 14.0 ~ 14.5GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed	OCR Scan	FLM1414-6F 1414-6F 2620D 14K4	PDF
7177-8C Abstract: FLM7177-8C/D Contextual Info: FLM7177-8C Fuffrsu Internally M a tc h e d P o w e r G a A s F E T s FEATURES • • • • • • High Output Power: P-idg = 39dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: r iadd = 29% (Typ.) Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM7177-8C 39dBm FLM7177-8C 7177-8C FLM7177-8C/D	PDF
FLM6472-25DA Contextual Info: F\| .ÇjU-, FLM6472-25DA Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 44dBm Typ.) High Gain: G ^ b = 7.0dB (Typ.) High PAE: riadd = 32% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM6472-25DA 44dBm -45dBc 32dBm Vo119 FLM6472-25DA	PDF
Contextual Info: F,¿¡U,. FLM5964-8C r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39.0dBm Typ. High Gain: G ^ b = 8.0dB (Typ.) High PAE: riadd = 30% (Typ.) Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM5964-8C 5964-8C	PDF
FLM4450-12DA Abstract: FLM4450-12D Contextual Info: F, , FLM4450-12DA J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 41 dBm Typ. High Gain: G ^ b = 10.5dB (Typ.) High PAE: riadd = 36% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM4450-12DA 41dBm -45dBc 30dBm FLM4450-12DA FLM4450-12D	PDF
FLM4450-18DA Contextual Info: F, , FLM4450-18DA J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 42.5dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: riadd = 32% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM4450-18DA -45dBc FLM4450-18DA	PDF

FUJITSU FLM 150 Search Results

FUJITSU FLM 150 Result Highlights (5)

FUJITSU FLM 150 Datasheets Context Search

FLM1011-4C

FLM1213-4C

0910-4C

1213-6F

Fujitsu FLM 150

FLM7179-12F

cq 838

FLM4450-25DA

5964-6D

FLM0910-4C

1414-6F

7177-8C

FLM6472-25DA

FLM4450-12DA

FLM4450-18DA