FUJI IGBT Search Results

Contextual Info: Preliminary Fuji IGBT Intelligent-Power-Module "Compact Type" Preliminary Application Note 6MBP15VR*060-50 Fuji Electric Co., Ltd. Jul. 2013 Fuji Electric Co., Ltd. MT6M08855 Rev.1.2 Jul.-2013 Preliminary CONTENTS Chapter 1 Product Outline 1. Introduction .

Contextual Info: M SPECIFICATION DEVICE NAME :_ I G B T TYPE NAME : 1MBH1 5 D - Q 6 SPEC. No. DATE Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. D A TE NAME APPROVED Fuji Electric Co,Ltci DRAWN CHECKED 1/12 H04-004-07 Ratings and characteristics of Fuji IGBT

IC15AV

Contextual Info: M SPECIFICATION DEVICE NAME :_ I G B T TYPE NAME : 1MBH1 5 D - Q 6 SPEC. No. DATE Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. D A TE NAME APPROVED Fuji Electric Co,Ltci DRAWN CHECKED 1/12 H04-004-07 Ratings and characteristics of Fuji IGBT

1MBI300SA-120

Abstract: 1MBI400JN-120-01 1MBI300JN-140 1MBI400JN-120 1MBI300SA120 1mbi400jn120 M237 1MBI200S-120 1MBI300JN120 1MBI30L-060
Contextual Info: Fuji Semiconductor Inc. Product Search Fuji Semiconductor, Inc. is dedicated to provide Quality Products with Superior Customer Service. Our extensive product line includes: Power Management ICs, Sensor ICs, and Driver ICs CMOS MOSFET and Smart MOSFET IGBT (Modules

30d060

Abstract: 200v dc motor igbt 30D-060 diode 104 CIET V200V igbt 30A SB4-4
Contextual Info: FUJI IGBT & FWD 600 V 30 A 1MBH 30D-060 Fuji Discrete Package IGBT Outline Drawing • Features •Square RBSOA •Low Saturation Voltage •Less Total Power Dissipation •Minimized Internal Stray Inductance ■ Applications •High Power Switching •AC. Motor Controls

transistor bc 7-40

Abstract: 6mbi100fc 6MBI100FC060 American Microsemiconductor 6MBI100FC-060
Contextual Info: 6MBI100FC-060 FUJI Electric IGBT Transistor Module Advancing the Semiconductor Industry Since 1972 Abstract The 6MBI100FC-060 is a discontinued insulated-gate bipolar transistor in a modular package by FUJI Electric, currently in “Last Time Buy” sale through American

Contextual Info: FUJI m uselfdsoe ; IGBT & FWD 1200 V 5A 1MB 05D-120 Fuji Discrete Package IGBT Outline Drawing • Features • Square RBSOA •Low Saturation Voltage • Less Total Power Dissipation •Minimized Internal Stray Inductance ■ Applications High Power Switching

Contextual Info: FUJI S'iUKHnBDË IGBT & FWD 600 V 20 A 1MB 20D-060 Fuji Discrete Package IGBT Outline Drawing I Features Square RBSOA »Low Saturation Voltage >Less Total Power Dissipation • Minimized Internal Stray Inductance • I Applications • High Power Switching

2MBI75UA-120

Contextual Info: Fuji Hitachi Power Semiconductor Co., Ltd IGBT Development Dept. Section M12 <TENTATIVE> 2 M B I7 5 U A - 1 2 0 Target specification This material and the information herein is the property of Fuji Slecmc Co .Ltd.They shall be neither reproduced, copied

Contextual Info: FUJI IGBT & FWD 600 V 5A 1MBC 05D-060 [11U1 STEDË Fuji Discrete Package IGBT Outline Drawing 4.5*u I Features >Square RBSOA >Low Saturation Voltage >Less Total Power Dissipation >Minimized Internal Stray Inductance 8.4±y I Applications >High Power Switching

15d060

Abstract: E1000S G100D 1000rr 15D-060
Contextual Info: FUJI IGBT & FWD 600 V 15 A 1MB 15D-060 Fuji Discrete Package IGBT Outline Drawing • Features >Square RBSOA Saturation Voltage <Less Total Pow er Dissipation >M inim ized Internal S tray Inductance > Low I Applications > High Pow er Switching M otor Controls

R0330

Abstract: 05D-060
Contextual Info: FUJI IGBT & FWD 600 V 5A 1MBC 05D-060 @ujMSr¡ro3D i: Fuji Discrete Package IGBT Outline Drawing 4 .5 * u • Features JJhu Square RBSOA • Low Saturation Voltage • Less Total Pow er Dissipation • M inim ized Internal Stray Inductance • ■ Applications

Contextual Info: Fuji Hitachi Power Semiconductor Co., Ltd IGBT Development Dept. Section M l2 <TENTA TIVE> 2 M B I1 0 0 U A -1 2 0 Target specification This material and the information herein is the property of Fuji Electnc Co .Ltd.They shall be neither reproduced, copied,

2MB11

Contextual Info: Fuji Hitachi Power Semiconductor Co., Ltd IGBT Development Dept. Section M12 <TENTATIVE> 2MB1150U B -120 Target specification This material and the Information herein is the property of Fuji Electnc Co.Ltd They shall be neither reproduced, copied lent, or disclosed in any way whatsoever for the use of any

Contextual Info: FUJI H T U K S T I S D 1 E IGBT & FWD 600 V 5A MBG 05D-060 Fuji Discrete Package IGBT Outline Drawing • Features Square R B SO A >Low Saturation Voltage •Less Total Power Dissipation *Minimized Internal Stray Inductance > ■ Applications High Power Switching

50d060

Abstract: 50D-060 1mbh *50D060 R0820
Contextual Info: FUJI E U T Î S D IGBT & FWD 600 V 50 A 1MBH 50D-060 E Fuji Discrete Package IGBT Outline Drawing • Features Square RBSOA * Low Saturation Voltage ► Less Total Pow er Dissipation * M inim ized Internal Stray Inductance * ■ Applications High Pow er Switching

QDGM573

Abstract: 10D060 S4008
Contextual Info: FUJI IGBT & FWD 600 V 10 A 1M B G 10 D -060 @ lU M S n B O S Fuji Discrete Package IGBT Outline Drawing • Features •S q u a re RBSOA • Low Saturation Voltage • Less Total Pow er Dissipation • Minim ized Internal Stray Inductance ■ Applications

nana electronics

Abstract: nana electronics current sensors Hall Current Sensors NANA electronics Hall Current Sensors
Contextual Info: CONTENTS Fuji Electric Products Intelligent Power M o dule s. 2 IGBT, G-Series Six Packs .2

2MBI300UD-120

Contextual Info: Fuji Hitachi Power Semiconductor Co.,Ltd IGBT Development Dept. Section M12 <TENTAT1VE> U -series 2 M B I3 0 0 U D -1 2 0 Target specification 1. Outline Drawing ( Unit : mm ) This ma lerïal and the Information herein is the property of Fuji Etectnc Co.Ltd.They shall be neither reproduced, copied,

1MBA10-090

Contextual Info: FUJI IGBT S P E C I F I C A T I O N TYPE NAME : 1MBA10-Q90 1. SCOPE This specification covers the ratings and requirements for FUJI IGBT Type 1MBA10-090. Application : for General Switching Power Supply. 2. OUT VIEW 2-1 Shape and Dimensions »•it 11 > *£

Contextual Info: FUJI IGBT S P E C I F I C A T I O N TYPE NAME : 1MBA10-Q90 1. SCOPE This specification covers the ratings and requirements for FUJI IGBT Type 1MBA10-090. Application : for General Switching Power Supply. 2. OUT VIEW 2-1 Shape and Dimensions » i 11 > •t * £

Contextual Info: FUJI IGBT & FWD 600 V 10 A 1MBG 10D-060 t n U K S T D S D E Fuji Discrete Package IGBT Outline Drawing • Features • Square RBSOA • Low Saturation Voltage • Less Total Pow er Dissipation • Minim ized Internal Stray Inductance ■ Applications • High Pow er Switching

12v igbt 20a

Abstract: L20A
Contextual Info: FUJI S D J K o n iS D IGBT & FWD 600 V 20 A 1MB 20D-060 E Fuji Discrete Package IGBT Outline Drawing • Features Square RBSOA • Low Saturation Voltage • Less Total Pow er Dissipation • Minim ized Internal Stray Inductance • ■ Applications High Pow er Switching

Contextual Info: Fuji Hitachi Power Semiconductor Co., Ltd. Section M12, Development Dept. Target specifications 6MBI75UB-120 This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any