FUJI 6000 Search Results

varistor ENC series ENC471

Abstract: enc431 varistor ENC221 vaRistor ENC431 VARISTOR ENC121 ENC241 VARISTOR ENC271 VARISTOR ENC471 ENC221 varistor ENC series
Contextual Info: FUJI S 'ü iM ë ü ’G S ü E FUJI Ceramic Surge Absorbers New EIMC Series Z-TRAP M etal Oxide Varistors for Transient Voltage Protection REH119 FUJI Z-TRAP ENC SERIES Transient Suppressors General description FUJI'S ne w line of ceram ic surge absorbers are designed to pro te ct lo w

6MBP75RS120

Abstract: CLK70AA160 PVC7516 6mbp50rs120 Thermistor 15SP 6mbp150rs060 d6650 CLK100AA160 ps12047 PD10016A
Contextual Info: GEI-100364C Supersedes GEI-100364B GE Fuji Drives USA AF-300 P11 User’s Guide 1999, 2000 by GE Fuji Drives USA, Inc. All rights reserved. These instructions do not purport to cover all details or variations in equipment, nor to provide every possible

7MBR50SB120-01

Abstract: 7MBR50SB120 100C
Contextual Info: This material and the Information herein Is ih» property of Fuji Elecinc Co .Ltd.They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever or the use of any third party.nor used tor the manufacturing purposes without the express written consent of Fuji Electric Co. Ltd.

7MBR50SB120

Abstract: DIODE 0406 251C
Contextual Info: This material and the Information herein is Ih# properly of Fuji Elecioc Co Lid.They shall be neither «»produced, copied leni, or disclosed in any way whatsoever fo' the use of any third party nor used or ihe manofac wring purposes without the express written consent of Fuji Electric Co. Ltd.

fuji step motor

Contextual Info: High Performance Multifunctional Inverters Maximum Engineering for Global Advantage FUJI INVERTERS With the flexibility and functionality to support a wide range of applications on all types of mechanical equipment, the FRENIC-MEGA takes core capability, responsiveness, environmental awareness, and

79N60S1

Abstract: FMW79N60S1 FMW79N60S1HF MOSFET 79N60S1
Contextual Info: / FMW79N60S1HF FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Low on-state resistance Low switching loss easy to use more controllabe switching dV/dt by Rg

varistor ENC series ENC471

Abstract: varistor ENC 471 ENC431 varistor ENC series enc471 ENC221 vaRistor ENC271 VARISTOR enc431 varistor ENC241 VARISTOR ENC431D-14A
Contextual Info: FUJI Z-TRAP ENC SERIES Transient Suppressors General description FUJI'S ceramic surge absorbers are designed to protect low voltage electronic devices such as semiconductors from the effects of destructive voltage transients. The Z-TRAP ENC series are widely used

MT5F12959

Abstract: 2MBI1200U4G-120 ED-4701 fuji igbt technical data
Contextual Info: DATE NAME DRAWN 07- Feb - 08 T.Nishimura CHECKED 07- Feb - 08 S.Miyashita CHECKED 07- Feb - 08 J.Komatsu T.Miyasaka DWG.No. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced,

ENE471D-14A

Abstract: ENE820D-20A 431D14 varistor 471 D14
Contextual Info: Z-TRAP FUJI Ceramic Surge Absorbers ENE series 50 to 300V AC Ta=25°C Features •Excellent clamping characteristics ·High discharge current capability up to 6500Amps ·Remarkably symmetrical V-I characteristics ·UL: recognized (UL1:UL1414 file No.E66188,UL2:UL1449,file No.E123894

ENE471D-10A

Abstract: ENE271D-10A ENE820D-07A ENE361D-10A ENE221D-14A ENE241D-10A VARISTOR ENE271D ENE471D-14A ENE101D-10A ENE121D-07A
Contextual Info: Z-TRAP FUJI Ceramic Surge Absorbers ENE series 50 to 300V AC Ta=25°C Features •Excellent clamping characteristics ·High discharge current capability up to 6500Amps ·Remarkably symmetrical V-I characteristics ·UL: recognized (UL1:UL1414 file No.E66188,UL2:UL1449,file No.E123894

ENE471D-10A

Abstract: 431D-14 varistor 471 D14 ENE271D-10A ENE431D-05A ENE471D-14A ENE820D-05A ne39 fuji ceramic surge ENE820D-07A
Contextual Info: Z-TRAP FUJI Ceramic Surge Absorbers ENE series 50 to 300V AC Ta=25°C Features •Excellent clamping characteristics ·High discharge current capability up to 6500Amps ·Remarkably symmetrical V-I characteristics ·UL: recognized (UL1:UL1414 file No.E66188,UL2:UL1449,file No.E123894

T35 diode

Abstract: diode T35 "RECTIFIER DIODE" HB 00173 CS52-12A CS53 CS53-16A CS54 diode fuji order number diode T35 -4-D6
Contextual Info: High Voltage Rectifier Diodes 1 Handling precautions Fuji Electric's high-voltage rectifier diodes were developed with emphasis on compactness. The diodes should be coated with an epoxy resin to maintain insulation during use. When handling the diodes, observe the following precautions at all

T35 diode

Abstract: diode T35 ESJA18 ESJA08-08 ESJA53-16A ESJA08 HB 00173 T35-4 diode ESJA04-03A ESJA09
Contextual Info: High Voltage Rectifier Diodes 1 Handling precautions Fuji Electric's high-voltage rectifier diodes were developed with emphasis on compactness. The diodes should be coated with an epoxy resin to maintain insulation during use. When handling the diodes, observe the following precautions at all

2MBI1200U4G-120

Abstract: ED-4701 MT5F12959
Contextual Info: DATE NAME DRAWN 14-Jul-05 T.Nishimura CHECKED 14-Jul-05 H.Kakiki T.Miyasaka DWG.No. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any

ED-4701

Abstract: diode mv 5T
Contextual Info: This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of

fmc80n10t2

Abstract: FMI80N10T2 smd H04 FMB80N10T2
Contextual Info: Device Name DATE DRAWN Jun.-17-'05 CHECKED Jun.-17-'05 CHECKED Jun.-17-'05 NAME APPROVED : Type Name : DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent,

Contextual Info: 3. Equivalent C ircuit 2 . Equivalent C ircu it of Module +o .co- -OE Current Control Circuit -Vh >^— o -a •O- 4 . Absolute Maximus Ratings whatsoever for the use of any in any way third party.nor used for the manufacturing purposes without the express written consent of Fuji Electric Co. Ltd.

enb 801 varistor

Abstract: varistor ENB ENB461 capacitor ENB401D-05A ENB461 ENB461M-03A ENB251 FUJI ENB221 enb221 ENB401D-10A
Contextual Info: COLLMER SEMICONDUCTOR INC F U J 7M DE I SSBflTTS 0DD07S0 3 È~'T " ft " ¿>2 I Ceramic Surge Absorber Z-TRAP/ENB Series x FUJI Z-TRAP ENB SERIES Transient Suppressors • General description FUJI'S new line of ceramic surge absorbers are designed to protect low voltage electronic devices such as semiconductors

Fuji POWER

Abstract: welding inverter 200A 1DI200M-120
Contextual Info: 1DI200M-120 200A パワートランジスタモジュール FUJI POWER TRANSISTOR MODULE POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： 短絡耐量が高い HHigh Arm Short Circuit Capability hFE が高い

1DI200M-120

Abstract: M109 welding inverter 200A
Contextual Info: 1DI200M-120 200A パワートランジスタモジュール FUJI POWER TRANSISTOR MODULE POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： 短絡耐量が高い HHigh Arm Short Circuit Capability hFE が高い

"Power Diode"

Abstract: 6RI100E inverters 3 phase ac newave power 6RI100E-060
Contextual Info: 6-Pack Diode 600/800 V 100 A FUJI S L S E D M ie POWER DIODE MODULE Features • A ll the te rm in a ls and the m o u n tin g plate are electrically isolated. These m odules can be installed in the same cooling fin as other m odules, thus saving in sta lla tion

FMP80N10T2

Contextual Info: DATE DRAWN Jun.-17-'05 CHECKED Jun.-17-'05 CHECKED Jun.-17-'05 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used

FMA80N10T2

Abstract: FMA80N10 MS5F6117 FUJI DS-100 N-Channel 40V MOSFET 32a
Contextual Info: DATE DRAWN Jun.-17-'05 CHECKED Jun.-17-'05 CHECKED Jun.-17-'05 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used

STR 6467

Abstract: str f 6467 1MBI800PN-180 T151
Contextual Info: m 7 ^ h -3 Fuji New Semiconductor Products - J L - T " * ? F r + >— ± *§ 1800V/800A/1 f l f f l IGBT i m i g ± * IS 1MBI800PN-180 b t ^ v ^ - - ; i/ Low loss • high speed switching IGBT Modules H • • Features mMJ£, High voltage, high current ^ ' i y ^><7' High speed switching