FU 024 N Search Results
FU 024 N Price and Stock
Infineon Technologies AG IRFU024NPBFAKLA1Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; IPAK,TO251 |
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IRFU024NPBFAKLA1 | 3,000 |
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IRFU024NPBFAKLA1 | 1,653 | 1 |
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Infineon Technologies AG IRFU9024NPBFMOSFETs MOSFT P-Ch -55V -11A 175mOhm 12.7nC |
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IRFU9024NPBF | 9,208 |
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Diodes Incorporated DMN2024UFU-7MOSFETs MOSFET BVDSS: 8V~24V U-DFN2030-6 T&R 3K |
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DMN2024UFU-7 |
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Diodes Incorporated DMN2024UFU-13MOSFETs MOSFET BVDSS: 8V~24V U-DFN2030-6 T&R 10K |
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DMN2024UFU-13 |
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Infineon Technologies AG IRFU024NPBFMOSFET, POWER, N-CH, VDSS 55V, RDS(ON) 0.075OHM, ID 17A, I-PAK (TO-251AA),PD 45W |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRFU024NPBF | Bulk | 1 |
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IRFU024NPBF | 26,028 |
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FU 024 N Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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pd4213
Abstract: nec microcomputers WZ100 DW-200
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pd421pd421-3necppd421/xpd421+6 | |
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Contextual Info: DWG. NO. DO N OT SC A LE SD-54516-024 D R A W IN G Ê B 4 N0 . DRWN: CH'K: 5 .9 * 0-3 APPR: feB3 N0 . DRWN; CH'K: APPR: feS2N0. DRWN: CH'K: APPRs <T> cn o OJ feBINO. DRWN: CH'K: APPR: PR O PO S ED '00/4/7 feso N o .JC 2 0 00 -06 59 drwn: T .A S A K A W A CH'K: M .FU KUSH IM A |
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sd-54516-024en-02jmxj-54 | |
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Contextual Info: /aM Female Style M Press-Fit C o n ta c t D e s ig n N um ber of N um ber of P a rt N u m b e r and C a v itie s f o r C a v itie s fo r P e r f o r m a n c e c l a s s e s a c c o r d i n g t o D IN 4 1 6 1 2 T e r m in a tio n L e n g th Signal Contacts Special Contacts |
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FR4 GLASS EPOXY
Abstract: m63026 M63023FP M63024FP M63026FP M63027FP M6302 18-Pulse
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m63023/024/026/027fp65khzrev010307fr4 glass epoxy+7 | |
Connectral
Abstract: Connectral 838 838N-839 Connectral 206 series he804 "UTE 93" marking code FY UD 8690 838 17 FZ 003 FY 505
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838n-839connectralconnectral 838connectral 206 series+6 | |
Connectral
Abstract: Connectral 838 Connectral 207-25S-Y1-04-C-003 FY 505
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838n-839connectralconnectral 838connectral 207-25s-y1-04-c-003+1 | |
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Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog |
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65khzrev010307 | |
IRF*125
Abstract: s4c diode IRFR IRFR020 0MFL IRFU025
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irfr020/22/24/25irfu020/22/24/25ib4142irfr020/u020+12 | |
Collmer Semiconductor
Abstract: ESJA31-20 ESJA25-12 ESJA25-16 ESJA25-20 ESJA31-16 ESJA35-10 ESJA37-16 ESJA57-04 ESJA18
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esja57-04esja35-10esja37-16csd20+13 | |
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Contextual Info: Mini-Circuits - Specification for Power Splitter - SCN-2-15 Power Splitter Notes: • When only specification for M range given, specification applies to entire frequency range. • Operating temperature: -55°C to 100°C Storage temperature: -55°C to 100°C; |
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scn-2-15 | |
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Contextual Info: Mini-Circuits - Specification for Power Splitter - SCN-2-22 Power Splitter Notes: • When only specification for M range given, specification applies to entire frequency range. • Operating temperature: -55°C to 100°C Storage temperature: -55°C to 100°C; |
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scn-2-22 | |
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Contextual Info: Mini-Circuits - Specification for Power Splitter - SCN-2-27 Power Splitter Notes: • When only specification for M range given, specification applies to entire frequency range. • Operating temperature: -55°C to 100°C Storage temperature: -55°C to 100°C; |
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scn-2-27 | |
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Contextual Info: Mini-Circuits - Specification for Power Splitter - SCN-2-19 Power Splitter Notes: • When only specification for M range given, specification applies to entire frequency range. • Operating temperature: -55°C to 100°C Storage temperature: -55°C to 100°C; |
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scn-2-19 | |
SD-5556
Abstract: 555B 33FLR
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sd-5556555b33flr | |
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Contextual Info: NE W! Surface Mount Monolithic Amplifiers 50Ω, Broadband, DC to 8 GHz LEE-19,-29,-39,-49,-59 Features • • • • frequency range, DC to 8 GHz, useable to 10 GHz up to 17.3 dBm typ. output power excellent package for heat dissipation, exposed metal bottom |
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lee-19fg873lee-29lee-39+1 | |
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Contextual Info: Mini-Circuits - Specification for Power Splitter - SCN-2-11 Power Splitter Notes: • When only specification for M range given, specification applies to entire frequency range. • Operating temperature: -55°C to 100°C Storage temperature: -55°C to 100°C; |
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scn-2-11 | |
lee -19 Monolithic amplifiersContextual Info: ! NEW LEE-19 • LEE-29 • LEE-39 Surface Mount Monolithic Amplifiers 50Ω, Broadband, DC to 8 GHz LEE-49 • LEE-59 Features • • • • frequency range, DC to 8 GHz, useable to 10 GHz up to 17.3 dBm typ. output power excellent package for heat dissipation, exposed metal bottom |
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lee-19lee-29lee-39lee-49+3 | |
LEE-29Contextual Info: Surface Mount Monolithic Amplifiers 50Ω, Broadband, DC to 8 GHz ! NEW LEE-19 • LEE-29 • LEE-39 LEE-49 • LEE-59 Features • • • • frequency range, DC to 8 GHz, useable to 10 GHz up to 17.3 dBm typ. output power excellent package for heat dissipation, exposed metal bottom |
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lee-19lee-29lee-39lee-49+2 | |
M9014
Abstract: LEE-19 FG873 LEE-29 LEE-39 LEE-49 LEE-59 16 52 221 061
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lee-19lee-29lee-39lee-49+4 | |
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Contextual Info: PD1 SERIES CONNECTORS 0.6mm .024" Pitch PCB-to-PCB SMT Connectors The PD1 Series connectors are 0.6mm (.024") SMT board-toboard connectors. Typically used as docking connectors in Notebook PCs and Personal Digital Assistants (PDA). GENERAL SPECIFICATIONS |
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d 7377 amplifier
Abstract: 16316 011
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lee-49dc-5000d 7377 amplifier16316 011 | |
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Contextual Info: Mini-Circuits - Specification for Amplifier - LEE-29 Amplifier print this page LEE-29 Frequency GAIN, dB Maximum Power, dBm Dynamic Range MHz VSWR Absolute Maximum Rating DC Power NF dB Typ. IP3 dBm Typ. Thermal resistance Øjc In Out Out In CurI P DC-3 3-fu DC-3 3-fu |
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lee-29dc-8000env07 | |
lee39Contextual Info: Mini-Circuits - Specification for Amplifier - LEE-39 Amplifier print this page LEE-39 Frequency GAIN, dB Maximum Power, dBm Dynamic Range MHz VSWR Absolute Maximum Rating DC Power NF dB Typ. IP3 dBm Typ. Thermal resistance Øjc In Out Out In CurI P DC-3 3-fu DC-3 3-fu |
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lee-39dc-8000lee39 | |
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Contextual Info: Mini-Circuits - Specification for Amplifier - LEE-59 Amplifier print this page LEE-59 Frequency GAIN, dB Maximum Power, dBm Dynamic Range MHz VSWR Absolute Maximum Rating DC Power NF dB Typ. IP3 dBm Typ. Thermal resistance Øjc In Out Out In CurI P DC-3 3-fu DC-3 3-fu |
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lee-59dc-5000 | |