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diode ry 10 A Contextual Info: FTU03N25E 250V N-Channel ESD-Protected MOSFET General Features BVDSS RDS ON (Max.) ID 250V 1.5Ω 3.0A t ESD Improved Capability Low ON Resistance Low Gate Charge (typical ?nC) Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free ee ¾ ¾ ¾ ¾	Original	FTU03N25E O-251IPAK diode ry 10 A	PDF

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diode ry 10 A

Contextual Info: FTU03N25E 250V N-Channel ESD-Protected MOSFET General Features BVDSS RDS ON (Max.) ID 250V 1.5Ω 3.0A t ESD Improved Capability Low ON Resistance Low Gate Charge (typical ?nC) Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free ee ¾ ¾ ¾ ¾

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FTU03N25E O-251IPAK diode ry 10 A

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