|
2SC5200
|
|
Toshiba Electronic Devices & Storage Corporation
|
NPN Bipolar Transistor / VCEO=230 V / IC=15 A / hFE=55~160 / VCE(sat)=3.0 V / TO-3P(L) |
Datasheet
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|
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CLF1G0035-200P
|
|
Rochester Electronics LLC
|
CLF1G0035-200 - 200W Broadband RF power GaN HEMT |
PDF
|
|
|
CLF1G0035-100
|
|
Rochester Electronics LLC
|
CLF1G0035-100 - 100W Broadband RF power GaN HEMT |
PDF
|
|
|
CLF1G0035-100P
|
|
Rochester Electronics LLC
|
CLF1G0035-100 - 100W Broadband RF power GaN HEMT |
PDF
|
|
|
52000-111LF
|
|
Amphenol Communications Solutions
|
52000-111LF-METRAL SHROUD 5X6 |
PDF
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