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Contextual Info: OCT 2010 FO Fo P R r R ro TU ef pe NE er rti ’ en es ce O nl y REV. 1.0 FS2017R-10-EN Datasheet FS2017R Dual N-Channel Enhancement Mode Power MOSFET FS2017R FO Fo P R r R ro TU ef pe NE er rti ’ en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司 |
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FS2017R-10-EN FS2017R |