FS S12 2 Search Results

NE6500496

Abstract: 173300 NEC Microwave Semiconductors
Contextual Info: L&S BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES TC= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 11.5 dB VDSX Drain to Source Voltage V 15 • HIGH EFFICIENCY (PAE): 45%

transistor MAR 826 data sheet

Abstract: SA611 amplifier gain 36 dB frequency 1GHz amplifier mixer circuit SA611DK
Contextual Info: INTEGRATED CIRCUITS SA611 1GHz low voltage LNA and mixer Product specification Supersedes data of 1997 Nov 07 IC17 Data Handbook Philips Semiconductors 1999 Mar 26 Philips Semiconductors Product specification 1GHz low voltage LNA and mixer SA611 DESCRIPTION

drive 5v 30191

Abstract: SA601 SA601DK 346-64 SR00065 30191
Contextual Info: INTEGRATED CIRCUITS SA601 Low voltage LNA and mixer – 1 GHz Product data Supersedes data of 1994 Dec 15 Philips Semiconductors 2004 Dec 14 Philips Semiconductors Product data 1GHz low voltage LNA and mixer SA601 DESCRIPTION PIN CONFIGURATION The SA601 is a combined RF amplifier and mixer designed for

Contextual Info: SH57K73 MASK 8-bit Micro-controller with LCD Driver Features SH6502-based single chip 8-bit micro-controller Operation Voltage: 2.4V - 5.5V 2 Oscillation sources: - 32.768kHz Crystal - 4.1943MHz Internal PLL divided by 1, 2, 4, 8 MCU Operation Modes: - STOP Mode: MCU & PLL Off, 32.768kHz clock off

rf 315mhz sample circuit

Abstract: MAX2640 181Noise
Contextual Info: WIRELESS, RF, AND CABLE Jul 23, 2003 MAX2640 LNA Operates at 315MHz for Automotive Keyless Entry Applications The MAX2640 low-cost, ultra low-noise amplifier LNA was originally characterized over the 400MHz to 2500MHz range. The device has also proven useful at 315MHz for keyless entry applications. Testing has shown that the part

4.1943MHZ

Contextual Info: SH57K83 MASK 8-bit Micro-controller with LCD Driver Features SH6502-based single chip 8-bit micro-controller Operation Voltage: 2.4V - 5.5V 2 Oscillation sources: - 32.768kHz Crystal - 4.1943MHz Internal PLL divided by 1, 2, 4, 8 MCU Operation Modes: - STOP Mode: MCU & PLL Off, 32.768kHz clock off

Hitachi DSA00118

Abstract: 3SK309 l2726 21L47 327 MARKIG
Contextual Info: 3SK309 GaAs N Channel Dual Gate MES FET UHF RF Amplifier ADE-208-472 A Z 2nd. Edition November. 1996 Features • • • Capable of low voltage operation (VDS = 1.5 to 3 V) Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz) High power gain

old Resistors Siemens s

Abstract: characteristics of mixer circuit diagram 900MHZ PMB2333 S-11
Contextual Info: SIEM EN S Mixer/Amplifier PMB 2333 Preliminary Specification Bipolar 1C ~ Functional Description, Benefits: • New B6HF bipolar technology, 25G H z ft • Small outline T-SSO P 16 package • Reduced external components • Frequency range up to 3.0GHz • Amplifier may be used as LNA or Driver

MC-7852G

Abstract: 9746 MC-7852 mc7852g 7805 nec mc 3734
Contextual Info: CATV 18 dB PUSH-PULL AMPLIFIER MC-7852G FEATURES OUTLINE DIMENSIONS Units in mm • GALLIUM ARSENIDE ACTIVE DEVICES PACKAGE OUTLINE • LOW DISTORTION • LOW NOISE FIGURE (6.4 dB TYP at 860 MHz) • HIGH RELIABILITY (FIT = 125 at heat sink temperature of 100°C,

BB502M

Abstract: DSA003644
Contextual Info: BB502M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-809C Z 4th. Edition Mar. 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz

Hitachi DSA002743

Contextual Info: BB304C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-606C Z 4th. Edition Aug. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;

rf transceiver 2.4 ghz

Abstract: 2.45GHZ balun "RF Transceiver" 2.2 ghz bandpass filter chip 5Ghz lna transistor datasheet TSSOP24 SA2420 SA2420DH 2.45Ghz oscillator circuit
Contextual Info: INTEGRATED CIRCUITS SA2420 Low voltage RF transceiver — 2.45GHz Product specification Philips Semiconductors 1997 May 23 Philips Semiconductors Product specification Low voltage RF transceiver — 2.45 GHz DESCRIPTION SA2420 PIN CONFIGURATION The SA2420 transceiver is a combined low-noise amplifier, receive

BB302M

Abstract: DSA003642
Contextual Info: BB302M Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-572B Z 3rd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz) • Withstanding to ESD;

TM 1628 Datasheet

Abstract: 607D 1SV70 BB305M Hitachi integrated circuit 1115 DSA003643
Contextual Info: BB305M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-607D Z 5th. Edition Mar. 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz)

1SV70

Abstract: BB304C 4K60 K704 DSA003643
Contextual Info: BB304C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-606D Z 5th. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;

BB102C

Abstract: BB302C DS 1287 SOT-343mod DSA003642
Contextual Info: BB102C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-588 Z 1st. Edition Nov. 1997 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD;

BB501C

Abstract: DSA003643
Contextual Info: BB501C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-701D Z 5th. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz

1SV70

Abstract: BB304M DSA003732
Contextual Info: BB304M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-605C Z 4th. Edition August 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;

Hitachi DSA0076

Abstract: BB601M BIC601M
Contextual Info: BB601M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-702D Z 5th. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz

Hitachi DSA0076

Abstract: 1SV70 BB405M
Contextual Info: BB405M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-718B Z 3rd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Superior cross modulation characteristics. • High gain; (PG = 28 dB typ. at f = 200 MHz)

Hitachi DSA0076

Abstract: 1SV70 BB404M
Contextual Info: BB404M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-717B Z 3rd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;

LNA Mixer VCO 2.4 GHz

Abstract: 800-1200MHZ SA620 SA620DK SA7025 philips radio 900MHz
Contextual Info: INTEGRATED CIRCUITS SA620 Low voltage LNA, mixer and VCO – 1GHz Product data Supersedes data of 1993 Dec 15 Philips Semiconductors 2004 Dec 14 Philips Semiconductors Product data 1GHz low voltage LNA, mixer and VCO DESCRIPTION SA620 PIN CONFIGURATION The SA620 is a combined RF amplifier, VCO with tracking bandpass

Contextual Info: SbE D G L 7 T 51 23 7 0 0 4 0 4 3 7 'îflS ISGTH SGS-THOMSON T-4,7'2t- M54/74HC4514 M54/74HC4515 ¡y HC4514 4-TO-16 LINE DECODER/LATCH HC4515 4-TO-16 LINE DECODER/LATCH INV. S G S-THOnSON HIGH SPEED tpD = 24 ns (TYP.) at VCc = 5V LOW POWER DISSIPATION ICC = 4 ¡iA (MAX.) at TA = 25°C

transistor BC 339

Abstract: wj-a87
Contextual Info: uuJ A87-2 / SMA87-2 10 to 300 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE FIGURE: 3.0 dB TYR HIGH EFFIEIENCY: 15 mA@ +5 Vdc (TYR) HIGH OUTPUT POWER AT 5 VOLTS: +11 dBm (TYP.) ♦ LOW VSWR: <1.5.1 (TYR) Outline Drawings