FRONT METAL RECTIFIER SQUARE TYPE Search Results

Contextual Info: IRG7CH37K10EF INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1200V IC Nominal = 15A TJ(max) = 175°C G VCE(on) typ = 1.9V @ IC= 15A E n-channel Applications • Medium Power Drives  UPS  HEV Inverter  Welding G C E Gate Collector Emitter Features

IRG8CH29K10F

Contextual Info: IRG8CH29K10F INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1200V IC Nominal = 25A TJ(max) = 175°C G VCE(on) typ = 1.7V @ IC= 25A E n-channel Applications • Industrial Motor Drives  UPS  HEV Inverter  Welding G C E Gate Collector Emitter Features

IRG8CH20K10F

Contextual Info: IRG8CH20K10F INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1200V IC Nominal = 15A TJ(max) = 175°C G VCE(on) typ = 1.7V @ IC= 15A E n-channel Applications • Industrial Motor Drives  UPS  HEV Inverter  Welding G C E Gate Collector Emitter

square d Type KA

Abstract: front metal rectifier square type
Contextual Info: Bulletin I0131J 09/00 IR150DG.HCB SERIES HIGH POWER RECTIFIER DIODES Junction Size: Square 150 mils Wafer Size: 4" VRRM Class: 600 and 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: 12F Series Major Ratings and Characteristics Parameters

T110HF

Contextual Info: Bulletin I0137J 05/99 IR480DG.HCB SERIES HIGH POWER RECTIFIER DIODES Junction Size: Square 480 mils Wafer Size: 4" VRRM Class: 600 and 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: T110HF Series Major Ratings and Characteristics

Contextual Info: Bulletin I0134J 05/99 IR230DG.HCB SERIES HIGH POWER RECTIFIER DIODES Junction Size: Square 230 mils Wafer Size: 4" VRRM Class: 600 and 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: 9AF Series Major Ratings and Characteristics Parameters

Contextual Info: Bulletin I0132J 05/99 IR180DG.HCB SERIES HIGH POWER RECTIFIER DIODES Junction Size: Square 180 mils Wafer Size: 4" VRRM Class: 600 and 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: 26MB Series Major Ratings and Characteristics Parameters

KA DIODE

Abstract: 40HF
Contextual Info: Bulletin I0133J 05/99 IR210DG.HCB SERIES HIGH POWER RECTIFIER DIODES Junction Size: Square 210 mils Wafer Size: 4" VRRM Class: 600 and 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: 40HF Series Major Ratings and Characteristics Parameters

T70HF

Contextual Info: Bulletin I0136J 05/99 IR350DG.HCB SERIES HIGH POWER RECTIFIER DIODES Junction Size: Square 350 mils Wafer Size: 4" VRRM Class: 600 and 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: T70HF Series Major Ratings and Characteristics

70HF

Contextual Info: Bulletin I0135J 05/99 IR280DG.HCB SERIES HIGH POWER RECTIFIER DIODES Junction Size: Square 280 mils Wafer Size: 4" VRRM Class: 600 and 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: 70HF Series Major Ratings and Characteristics Parameters

amp circuit diagrams 300w

Abstract: 5196-04-RE 7805 rectifier BY 236 UL508A 2505 photocoupler "by 236" EN50082-2 S82J 100-W
Contextual Info: Switching Power Supply S82J Compact and Economical Switching Power Supplies with Capacities Up to 600 W DIN Track Mounting Bracket Type Now Available Power range from 10 W up to 600 W. Output Voltages: 5 V, 12 V, 15 V, or 24 V. Wide AC input range 10-/25-/50-/100-W, 24-V output models: 100 to 240 VAC on one body

600w switch mode power supply circuit diagram

Abstract: L9112 10015a S82J-05024A S82J-05024DD 7805 rectifier 02524 pcb design for amplifier w/ 12 v dc supply transistor 60024 5277-04A-RE
Contextual Info: Switch mode Power Supply S82J Compact and Economical Switch mode Power Supplies with Capacities Up to 600 W DIN Track Mounting Bracket Type Now Available • Power range from 10 W up to 600 W. • Output Voltages: 5 V, 12 V, 15 V, or 24 V. • Mounting bracket provided for mounting to control panels.

1N3595US

Contextual Info: DIODES SCA1N3595 RECTIFIER Ultra Low Leakage Radiation Hardness Assured Y R A DESCRIPTION This “high reliability ultra low leakage” rectifier diode is suitable for numerous applications in space and military area. Constructed in glass packages using an internal category-I metallurgical bond as tested per MIL-PRF-19500, this rectifier offers the working peak reverse voltage of 125V with 150mA maximum current rating. These devices are also

40HF

Abstract: international rectifier class d
Contextual Info: Bulletin I0133J 05/99 IR210DG.HCB SERIES HIGH POWER RECTIFIER DIODES Junction Size: Square 210 mils Wafer Size: 4" VRRM Class: 600 and 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: 40HF Series Major Ratings and Characteristics Parameters

T110HF

Abstract: metal rectifier diode
Contextual Info: Bulletin I0137J 05/99 IR480DG.HCB SERIES HIGH POWER RECTIFIER DIODES Junction Size: Square 480 mils Wafer Size: 4" VRRM Class: 600 and 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: T110HF Series Major Ratings and Characteristics

WAFER International Rectifier

Abstract: IR hexfet probe specifications 93825
Contextual Info: Preliminary Data Sheet I0146J 02/02 IR155DM16CCB SERIES STANDARD RECOVERY DIODES Junction Size: Square 155 mils Wafer Size: 4" VRRM Class: 1600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 15ETS Series Major Ratings and Characteristics

IR1155

Contextual Info: Bulletin I0213J 12/01 IR155BG12DCB PHASE CONTROL THYRISTORS Junction Size: Square 155 mils Wafer Size: 4" VRRM Class: 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: 16TTS Series Major Ratings and Characteristics Parameters Units Test Conditions

20ETF

Contextual Info: Bulletin I0124J 07/97 IR180LM.CS02CB SERIES FAST RECOVERY DIODES Junction Size: Square 180 mils Wafer Size: 4" VRRM Class: 200 to 600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 20ETF Series Major Ratings and Characteristics Parameters

20ETF

Contextual Info: Bulletin I0125J 07/97 IR180LM.CS05CB SERIES FAST RECOVERY DIODES Junction Size: Square 180 mils Wafer Size: 4" VRRM Class: 1000 and 1200 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 20ETF Series Major Ratings and Characteristics Parameters

20ETS

Abstract: IR180DM
Contextual Info: Bulletin I0120J rev. A 02/97 IR180DM.CCB SERIES STANDARD RECOVERY DIODES Junction Size: Square 180 mils Wafer Size: 4" VRRM Class: 800 and 1200 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 20ETS Series Major Ratings and Characteristics

IR230LM06CS02CB

Abstract: 40EPF
Contextual Info: Bulletin I0126J 08/97 IR230LM06CS02CB FAST RECOVERY DIODE Junction Size: Square 230 mils Wafer Size: 4" VRRM Class: 600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 40EPF Series Major Ratings and Characteristics Parameters Units 1080 mV

40EPS

Abstract: IR230DM12CCB WAFER International Rectifier
Contextual Info: Bulletin I0121J rev. A 02/97 IR230DM12CCB STANDARD RECOVERY DIODES Junction Size: Square 230 mils Wafer Size: 4" VRRM Class: 1200 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 40EPS Series Major Ratings and Characteristics Parameters

20ETS

Abstract: IR180DM16CCB
Contextual Info: Bulletin I0116J 09/00 IR180DM16CCB SERIES STANDARD RECOVERY DIODES Junction Size: Square 180 mils Wafer Size: 4" VRRM Class: 1600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 20ETS Series Major Ratings and Characteristics Parameters

omron S82J-6024

Abstract: S82J-6024 S82J-1024 S82J-5024 S82J-15024D2 S82J-0524 S82J-5524 S82J-2024 S82J-6524 S82Y-JC-T
Contextual Info:
Switching Power Supply S82J Open-Frame, Covered-Frame, or Enclosed-Frame Type with Capacity Up to 600 W
Models range from 10 W to 600 W
Wide range of output voltages: 5 V, 12 V, 15 V, or 24 V
UL, CSA, VDE, and CE Approvals
10 to 150 W models can easily be