FRI 57 Search Results

Contextual Info: npOnme 42 Fri Feb 26 08:04:57 1999 Philips Com ponents Product specification Surface mount ceramic multilayer capacitors TFEATURES Class 1, NP0 50/100/200/500 V Noble Metal Electrode Q UICK REFERENCE DATA • Seven standard sizes DESCRIPTION • High capacitance per unit volum e

7667

Abstract: 30427
Contextual Info: Power transformers: Through-hole 40-100kHz flyback EFD20 .425 MAX. 5.0V -766.7m ADC _ SCHOTTKY SEC1 5.0V -766.7m ADC SEC SCHOTTKY FRI 1 6 -4 0 V 4 0 k —1QQkHz SEC2 -0 5.0V -766.7m ADC - SCHOTTKY SEC3 View 2 View 1 Output 30417 30419 30421 30423 30425 30427

37C65

Abstract: c5287 FE3001 FE3031 T58-T57 D 80287-8 em-180 PFA 10Z FE3010B FE3021
Contextual Info: WESTERN DIGITAL CORP 4QE D m =1710220 Q0QbSS3 Q •■ bil>C fri . „ SYST EM S L Ö GIC / P ERIP H ERA L " ' I ^ T S 1 ^ 3 » '2 . \ FE3021 Address Buffer and Memory Controller •HÜWESTERN DIGITAL H Powered by ICminer.com Electronic-Library Service CopyRight 2003

ycbcr 16bit 8bit

Abstract: CCIR 601 matrix "RGB to YCbCr" 50 YXG 22 M dcf CLOCK "RGB to YCbCr" AND color space conversion 24bit rgb input to 8bit rgb output 3x3 matrix Banding CMOS DIGITAL CAMERA 640x480
Contextual Info: HV7131GP CMOS Image Sensor with Image Signal Processing HV7131GP Preliminary V2.0 2003/ 03 / 12 V2.0 1 HV7131GP Revision History Revision Script Date Comments V1.0 2001/11/08/Thu – 2001/11/14/Thu V1.1 2001/12/21/Fri - HV7131GP Preliminary is released - Gamma slope table of Knee/De-Knee is added,

SAA9055

Abstract: PNA7509 SOT117 SAA9050 SAA9058 PNA-7509
Contextual Info: DEVELOPMENT DATA This data sheet contains advance in fo rm a tio n and specifications are subject to change w ith o u t notice. Fri SA A9055 3 B u m SUPERSEDES DATA OF JUNE 1988 DIGITAL SECAM DECODER DSD GENERAL DESCRIPTION The SAA9055 is designed to provide colour difference signals for a digital TV signal processing system.

Contextual Info: GM71V64403A GM71VS64403AL 16,777,216 w o r d s x 4 b i t I G «ternir a n P n ! fri L u o e m ic o n u o .,L t a . CMOS DYNAMIC RAM Description Pin Configuration 32 S O J /T S O P n The GM71V S 64403A/AL is the new generation dynamic RAM organized 16,777,216 words by 4bits.

bocina

Abstract: TD560 microfono TD235 TD245 TD250 TD360 TD590
Contextual Info: td560.FH8 Fri Apr 19 14:35:20 2002 Pagina 1 TD560 -Pro- CONSTANT DIRECTIVITY HORN This 2” entry horn is designed to provide uniform on and off-axis response. The constant directivity characteristics of this model ensure the ability to cover 60º wide horizontally and 40º wide vertically, at virtually any frequency within its operational range. To ensure freedom of resonance,

Contextual Info: L64105ds 1 Fri Sep 5 17:06:27 1997 L64105 MPEG-2 Audio/Video Decoder LSI LOGIC P relim inary Datasheet The L64105 is an integrated, low-cost source audio/video A/V decoder for use in MPEG-2 A/V decoding systems. The system block diagram in Figure 1 shows an application of the L64105 within an MPEG-2 system.

TLY255A

Abstract: TLY143 TLYA180AP TLY181P SEL1310G TLPY144 TLUY144 TLY134A TLY144 TLY147
Contextual Info: ftft m ft V *• •1MÉ0I t ? * ;í fitfií. ?; . * TLY134A *- T. TLY261P TLY263P fri§ 'deg A,. 7\, = 25Xj jR /i I, W im A ; ' V ! ■7\, = 25"C •f>ÎMâîÊr± A-« h Ir 'ir A ; :mA' ií •C: 45 585 20 15 2.1 20 25 4 -20-75 51 140 585 3.5 15 2.1 20 25

FCR16

Contextual Info: M38039MF - HH FCR16.93M2G Udd= 5 [U] Fig,a~e o a. U1H/U1L 0 Typical [Ul Ul H i U2H 5£ - m jl c, Fosc -I I I • i Y I I "575" —e— V . ? . -j I I I I I I l_ -V [/] I d, Tri se 800 r I I I I I I I I I I L_ I I I I I l_ I I I I I l_ i i i i i 60 80 EuS]

Contextual Info: Fast recovery silicon diodes. 1 Amp. to 1.5 Amps. The plastic material carries U/L recognition 94V-0. TY PE Axial Lead | S.M .D. Maximum Average Forward Rectified Current I fca v Ta A) I ( °C) Max. Recurrent Reverse Voltage V rrm (V) Repetitive Peak Forward

ETS564

Abstract: SP705 7356 54-619 bc 147 transistor BC 331 BC 536 transistor bc 548 SP706 SP813LEN-L
Contextual Info: Product Characterization Report for the SP705 Family of Products SP705, SP706, SP813 Products Prepared By: Salvador Wu & Greg West Date: February 16, 2007 SP705 Product Family Characterization Report Table of Contents Section Introduction Characterization Procedure

ICX205

Abstract: S2513 AVD1 CXA2006Q CXD2311AR CXD2460R ICX205AK VOM101 VOM102
Contextual Info: CXD2460R Timing Generator for Progressive Scan CCD Image Sensor Description The CXD2460R is an IC developed to generate the timing pulses required by Progressive Scan CCD image sensors as well as signal processing circuits. Features • Electronic shutter function

transistor sc 308

Abstract: NTES1N02 NTES1P02
Contextual Info: NTES1P02 Product Preview Power MOSFET 50 mAmps, 20 Volts P–Channel SC–75 • • • • Low Threshold Voltage: Vth = 0.5 to 1.5 V High Speed Small Package Complementary to NTES1N02 http://onsemi.com 50 mAMPS 20 VOLTS RDS on = 15 W MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

MBR6045PT

Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction – Terminals 1 and 3 May Be Connected for

MBR6045WT

Contextual Info: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction – Terminals 1 and 3 May Be Connected for

VN2410L

Abstract: VN2410LZL1
Contextual Info: VN2410L Preferred Device Small Signal MOSFET 200 mAmps, 240 Volts N–Channel TO–92 MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain–Source Voltage VDSS 240 Vdc Drain–Gate Voltage VDGR 60 Vdc Gate–Source Voltage – Continuous – Non–repetitive tp ≤ 50 µs

LVC16240

Abstract: LCX16240 LVT16240 VCX16240
Contextual Info: AND8055/D When to Select LVT Logic for a Design Fred Zlotnick ON Semiconductor http://onsemi.com APPLICATION NOTE possible to “mix and match” logic devices operating at the same voltage. In addition LCX, LVT, and LVC all permit the devices to be placed in a 5.0 Volt bus OVT .

B1545P

Abstract: b1545 MBR1545CTP
Contextual Info: MBR1545CTP SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • • • • • Center–Tap Configuration Guardring for Stress Protection

MBR0520LT1

Abstract: MBR0520LT3 ON SEMICONDUCTOR MARKING DIAGRAM SOD-123
Contextual Info: MBR0520LT1, MBR0520LT3 Preferred Devices Surface Mount Schottky Power Rectifier Plastic SOD–123 Package The Schottky Power Rectifier employs the Schottky Barrier principle with a barrier metal that produces optimal forward voltage drop–reverse current tradeoff. Ideally suited for low voltage, high

b745

Abstract: b735 MBR735 MBR745
Contextual Info: MBR735, MBR745 MBR745 is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • • • • Guardring for Stress Protection

MPSA27

Abstract: MPS-A27
Contextual Info: ON Semiconductort Darlington Transistor MPSA27 NPN Silicon MAXIMUM RATINGS Rating Symbol MPSA27 Unit Collector–Emitter Voltage VCES 60 Vdc Emitter–Base Voltage VEBO 10 Vdc Collector Current — Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C

NYR0120PWT1

Abstract: NYR0160PWT1 R0160
Contextual Info: NYR0120PWT1, NYR0160PWT1 Product Preview Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors http://onsemi.com PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for

bc368 equivalent

Abstract: BC368 BC369
Contextual Info: ON Semiconductort NPN BC368, -25 PNP BC369 Amplifier Transistors COLLECTOR 2 COLLECTOR 2 3 BASE 3 BASE NPN PNP Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO