FREQ400K Search Results
FREQ400K Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: GFT31/60 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)60 I(C) Max. (A) Absolute Max. Power Diss. (W)125m Maximum Operating Temp (øC)75õ I(CBO) Max. (A)20u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain. |
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GFT31/60 Freq400k | |
Contextual Info: 2N6493 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)100 I(C) Max. (A)15 Absolute Max. Power Diss. (W)100# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)700u° @V(CBO) (V) (Test Condition)35 V(CE)sat Max. (V)3.5 @I(C) (A) (Test Condition)10 |
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2N6493 Freq400k | |
2N290Contextual Info: 2N290 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)70 I(C) Max. (A)12 Absolute Max. Power Diss. (W)55 Maximum Operating Temp (øC)95õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)0.6 @I(C) (A) (Test Condition)12 |
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2N290 Freq400k StyleTO-36 | |
Contextual Info: 2N142 Transistors Ge NPN Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)60 I(C) Max. (A)800m Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)75õ I(CBO) Max. (A)5.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2N142 Freq400k | |
Contextual Info: GFT3408/60 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)75õ I(CBO) Max. (A).50m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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GFT3408/60 Freq400k time20u | |
Contextual Info: GFT3408/20 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)75õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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GFT3408/20 Freq400k time20u | |
Contextual Info: 2CY33 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V)32 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175’ I(CBO) Max. (A)20u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2CY33 Freq400k | |
Contextual Info: GFT31/15 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)15 I(C) Max. (A)300m Absolute Max. Power Diss. (W)125m Maximum Operating Temp (øC)75õ I(CBO) Max. (A)20u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain. |
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GFT31/15 Freq400k | |
Contextual Info: GFT3408/80 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)75õ I(CBO) Max. (A).50m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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GFT3408/80 Freq400k time20u | |
Contextual Info: 2N143 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)60 I(C) Max. (A)800m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)75õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2N143 Freq400k | |
Contextual Info: 2N6494 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)15 Absolute Max. Power Diss. (W)100# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)3.5 @I(C) (A) (Test Condition)10 |
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2N6494 Freq400k | |
Contextual Info: SFT192 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V) I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)2.0mØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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SFT192 Freq400k | |
Contextual Info: 2N6492 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)55 I(C) Max. (A)15 Absolute Max. Power Diss. (W)100# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.5m° @V(CBO) (V) (Test Condition)25 V(CE)sat Max. (V)3.5 @I(C) (A) (Test Condition)10 |
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2N6492 Freq400k | |
Contextual Info: 2CY32 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)64 V(BR)CBO (V)64 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175’ I(CBO) Max. (A)20u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2CY32 Freq400k | |
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Contextual Info: 2N227 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)150m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)65õ I(CBO) Max. (A)25u @V(CBO) (V) (Test Condition)12 h(FE) Min. Current gain.20 h(FE) Max. Current gain.120 |
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2N227 Freq400k | |
Contextual Info: GFT31/30 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A) Absolute Max. Power Diss. (W)125m Maximum Operating Temp (øC)75õ I(CBO) Max. (A)20u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain. |
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GFT31/30 Freq400k | |
Contextual Info: GFT3408/40 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)40 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)75õ I(CBO) Max. (A).50m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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GFT3408/40 Freq400k time20u | |
Contextual Info: SFT190 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)65ã V(BR)CBO (V) I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)100þ I(CBO) Max. (A)2.0mØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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SFT190 Freq400k | |
Contextual Info: GFT31 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)15 I(C) Max. (A) Absolute Max. Power Diss. (W)125m Maximum Operating Temp (øC)75õ I(CBO) Max. (A)20u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain. |
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GFT31 Freq400k | |
Contextual Info: 2N1126 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)35â V(BR)CBO (V)40 I(C) Max. (A)250m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)85õ I(CBO) Max. (A)75u @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)100m |
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2N1126 Freq400k | |
Contextual Info: 2N1124 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35â V(BR)CBO (V)40 I(C) Max. (A)250m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)75u @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain. h(FE) Max. Current gain. |
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2N1124 Freq400k |