FREQ100K Search Results
FREQ100K Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Hewlett-Packard+application+note+970+BJTContextual Info: 970 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)120 I(C) Max. (A).14 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)140þ I(CBO) Max. (A).10m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
Original |
Freq100k Hewlett-Packard+application+note+970+BJT | |
Contextual Info: 2N1358+JAN Transistors Ge PNP Power BJT Military/High-RelY V BR CEO (V) V(BR)CBO (V)80 I(C) Max. (A)15 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)95õ I(CBO) Max. (A)8.0mx @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V).70 @I(C) (A) (Test Condition)12 |
Original |
2N1358 Freq100k time15uà StyleTO-36 | |
Contextual Info: PTC105 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)72 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)90 Maximum Operating Temp (øC) I(CBO) Max. (A)15mØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
Original |
PTC105 Freq100k | |
Contextual Info: 2N1654 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)50m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)160þ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V).30 @I(C) (A) (Test Condition)5.0m |
Original |
2N1654 Freq100k | |
Contextual Info: 2N1655 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)125 I(C) Max. (A)50m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)160þ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V).30 @I(C) (A) (Test Condition)5.0m |
Original |
2N1655 Freq100k | |
2N1358Contextual Info: 2N1358 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)80 I(C) Max. (A)15 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)95õ I(CBO) Max. (A)8.0mx @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V).70 @I(C) (A) (Test Condition)12 |
Original |
2N1358 Freq100k time15uà StyleTO-36 | |
AN592
Abstract: 16C54 PIC16C54 PIC16C5X AN-592 0a79
|
Original |
AN592 PIC16C5X PIC16C5X 16-bits. ---------------01C0 DS00592C AN592 16C54 PIC16C54 AN-592 0a79 | |
AN592
Abstract: 16C54 PIC16C54 PIC16C5X MPASM code macro endm 0A79
|
Original |
AN592 PIC16C5X PIC16C5X 16-bits. D-81739 AN592 16C54 PIC16C54 MPASM code macro endm 0A79 | |
Contextual Info: 2N3586 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)3.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
Original |
2N3586 Freq100k | |
0A79
Abstract: 0a4e AN592 0A80 16C54 PIC16C54 PIC16C5X 05b1 002C
|
Original |
AN592 PIC16C5X PIC16C5X 16-bits. 0A79 0a4e AN592 0A80 16C54 PIC16C54 05b1 002C | |
00CF
Abstract: 0A79 0A79 diode 0A79 datasheets Prescaler 16C54 AN592 PIC16C54 PIC16C5X 0A54
|
Original |
AN592 PIC16C5X PIC16C5X 16-bits. DS00592D-page 00CF 0A79 0A79 diode 0A79 datasheets Prescaler 16C54 AN592 PIC16C54 0A54 | |
Contextual Info: 2SD679 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)70 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)200u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k h(FE) Max. Current gain.10k |
Original |
2SD679 Freq100k | |
Contextual Info: 2N1275 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)50m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)160’ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V).30 @I(C) (A) (Test Condition)5.0m |
Original |
2N1275 Freq100k |