FRD CV Search Results

diode marking code I5

Contextual Info: Super Fast Recovery Diode Single Diode mtm D30L60 OUTLINE Unit I mm Weight 43g Typ Package I ITO-3P 15 600V 30A Date code 5.5 N Feature • ® M ± FRD • High Voltage Super FRD • Low Noise • trr=150ns Type No. • trr= 150ns toft Polarity • Full Molded

Contextual Info: Super Fast Recovery Diode Single Diode m tm OUTLINE SF5L60U 600V 5A Feature • • • • • • ® M ± FRD • is .y 'ix • trr=25ns • 7 J IÆ -J U K •üêHKEE 2kVSIŒ High Voltage Super FRD Low Noise trr=25ns Full Molded Dielectric Strength 2kV

J533

Abstract: S3L60 fly wheel J533-1
Contextual Info: Super Fast Recovery Diode Axial Diode OUTLINE S3L60 Unit : mm Package : AX14 W eight l.OÓRÍTyp 6 0 0 V 2 .2 A Feature 26.5 • r a M ± FRD • High Voltage Super FRD •ñ S 'í X • Low Noise • trr=50ns • trr=50ns MA 26.5 -L i. N * KtflliAiKliSM

diode lt 316

Abstract: marking u4 diode
Contextual Info: Super Fast Recovery Diode Twin Diode OUTLINE SF6LD60M 600V 6A Feature • raffittì FRD • f i Vf= 1.65V • High Voltage Super FRD • 7 / IÆ - J I/ ^ • Full Molded • Œ ï i H Œ 2kV S I I • Dielectric Strength 2kV • Low V f=1 .65V Main Use • Switching Regulator

S20LC60US

Abstract: FRD 302 fly wheel diode super fast S20LC60
Contextual Info: Super Fast Recovery Diode Twin Diode OUTLINE S20LC60US Unit : m m Package I MTO-3P W eight 6.1g Typ> 600V 20A •» : Feature • ra M ± FRD • • • • • trr=25ns • S jc tf/J v c V U High Voltage Super FRD Low Noise trr=25ns Small B jc Main Use •

Contextual Info: Super Fast Recovery Diode Single Diode mtm SF3L60U OUTLINE U nit I m m Package : FTO-220 W eigh t 1.9 *: T y p 600V 3A 4.5 Feature • ®M± FRD • • • • • • is.y'ix • trr=20ns • 7 J IÆ -J U K •üêHKEE 2kVSIŒ High Voltage Super FRD

Contextual Info: Super Fast Recovery Diode Single Diode M im SF20L60U OUTLINE U nit I mm Package : FTO-220 W eight 1.9k T y p 4.5 600V 20A Feature • ®M± FRD • High Voltage Super FRD • is . y 'ix • Low Noise • trr=35ns • trr=35ns • 7 J IÆ -J U K • Full Molded

D30L60

Contextual Info: Super Fast Recovery Diode Single Diode •¿m H D30L60 OUTLINE Unit : mm W eight 4.3« T yp P a c k a g e : IT O -3 P 5.5 15 600V 30A a -Æ H K W ) Date code N Feature • raiHŒ FRD • • • • • e y -fX • trr=150ns • yJlst-Jb F S3T High Voltage Super FRD

F20L60U

Abstract: 6BT MARKING F20L60 J533 C180A f20l SF20L60U D0.K F20L6 SF20L60
Contextual Info: Super Fast Recovery Diode Single Diode •¿m u OUTLINE Package I FTO-220 SF20L60U Unit :m m W eight 1.9« T y p 4.5 600V 20A Feature • raiHŒ FRD • High Voltage Super FRD • e y - r x • Low Noise • trr=35ns • • trr=35ns • Full Molded K •fê S iü Œ 2kVßfiE

MIG12J504L

Abstract: marking mitsubishi
Contextual Info: MIG12J504L MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG12J504L Features The 4th generation trench gate thin wafer NPT IGBT is adopted. FRD is built in. I/O input: logic level 3.3 V / 5 V The level shift circuit by high-voltage IC is built in.

mig20j

Contextual Info: MIG20J504LA MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG20J504LA Features The 4th generation trench gate thin wafer NPT IGBT is adopted. FRD is built in. I/O input: logic level 3.3 V / 5 V The level shift circuit by high-voltage IC is built in.

MIG10J504H

Contextual Info: MIG10J504H MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG10J504H Features The 4th generation trench gate thin wafer NPT IGBT is adopted. FRD is built in. I/O input: logic level 3.3 V / 5 V The level shift circuit by high-voltage IC is built in.

MIG10J503L

Contextual Info: MIG10J503L TOSHIBA Intelligent Power Module MIG10J503L MIG10J503L is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI

Contextual Info: MIG15J503H TOSHIBA Intelligent Power Module MIG15J503H MIG15J503H is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI

MIG10J503H

Abstract: MIG10J503 300VVcc
Contextual Info: MIG10J503H TOSHIBA Intelligent Power Module MIG10J503H MIG10J503H is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI

MIG15J503L

Contextual Info: MIG15J503L TOSHIBA Intelligent Power Module MIG15J503L MIG15J503L is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI

MIG20J503L

Contextual Info: MIG20J503L TOSHIBA Intelligent Power Module MIG20J503L MIG20J503L is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI

MIG10J503H

Contextual Info: MIG10J503H MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG10J503H MIG10J503H is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI

Contextual Info: MIG12J504L TOSHIBA Intelligent IGBT Module MIG12J504L Features • The 4th generation trench gate thin wafer NPT IGBT is adopted. • FRD is built in. • I/O input: logic level 3.3 V / 5 V • The level shift circuit by high-voltage IC is built in. •

MIG20J503H

Contextual Info: MIG20J503H MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG20J503H MIG20J503H is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI

MIG10J503L

Contextual Info: MIG10J503L MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG10J503L MIG10J503L is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI

marking mitsubishi

Abstract: MIG15J503L
Contextual Info: MIG15J503L MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG15J503L MIG15J503L is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI

TOSHIBA IGBT DATA BOOK

Abstract: MIG10J504H
Contextual Info: MIG10J504H TOSHIBA Intelligent IGBT Module MIG10J504H Features • The 4th generation trench gate thin wafer NPT IGBT is adopted. • FRD is built in. • I/O input: logic level 3.3 V / 5 V • The level shift circuit by high-voltage IC is built in. •

Contextual Info: MIG12J503L MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG12J503L MIG12J503L is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI