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    FR SUBSTRATE Search Results

    FR SUBSTRATE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PRELIMINARY FAILSAFE FUSE RESISTORS CUSTOM DESIGN - 1/8 WATT to 50 WATT RESISTORS wCOILSwDELAY LINES FR SERIES Precision Grade Fuse Resistors! FEATURES RCD’s FR Series was designed to obtain the best from two devices. It combines the performance of a precision grade


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    FR1206

    Abstract: FR1206JR YAGEO RC1206 cd 4611 FR0603 resistor 240 RESISTOR FOOTPRINT 1206 YAGEO CHIP RESISTORS MARKING RC0603 YNSC056 FR4 epoxy dielectric constant 4.2
    Contextual Info: DATA SHEET FUSIBLE CHIP RESISTORS FR series Pb Free 5% Product specification – Sep 26, 2005 V.0 sizes 0603/1206 2 Product specification Chip Resistor Surface Mount FR SERIES 11 0603/1206 (Pb Free) SCOPE This specification describes FR0603/1206 fusible chip resistors with leadfree terminations made by thick film process.


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    FR0603/1206 FR1206 FR1206JR YAGEO RC1206 cd 4611 FR0603 resistor 240 RESISTOR FOOTPRINT 1206 YAGEO CHIP RESISTORS MARKING RC0603 YNSC056 FR4 epoxy dielectric constant 4.2 PDF

    Contextual Info: h a fr fr is CD74FCT273T, CD74FCT2273T S E M I C O N D U C T O R Fast CMOS Octal D Flip-Flop with Master Reset December 1996 Features Description • Advanced 0.8 micron CMOS Technology The CD74FCT273T and CD74FCT2273T are 8-bit wide octal designed with eight edge-triggered D-type flip-flops


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    CD74FCT273T, CD74FCT2273T CD74FCT273T CD74FCT2273T PDF

    151-ETQP2H

    Abstract: 1R2B
    Contextual Info: ft fr Date of Issue : 2002^4^240 April 24,2002_ * fr K # C lassificatio n : ff« « _ LJ Change New D igj-kev A À tt I t PRODUCT SPECIFICATION FOR INFORMATION m ¿s * » Product Description : P O W E R C H O K E C O IL SI o°« n°n # Product Part Number


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    TlPC-02026 151-ETQP2H 1R2B PDF

    3M DP100

    Abstract: Oakite E61941
    Contextual Info: 3 Scotch-Weld TM Epoxy Adhesive DP100 FR Technical Data July, 2011 Product Description 3M Scotch-Weld™ Epoxy Adhesive DP100 FR is a two-part flame retardant self-extinguishing version of Scotch-Weld DP100. It meets the UL94 V-O Burn Test requirements and has a work life of 4-8 minutes after mixing. It is ideal for


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    DP100 DP100. E61941) 225-3S-06 3M DP100 Oakite E61941 PDF

    DP100

    Abstract: 1876-61T Oakite 3M DP100 oils bulk modulus DP100FR ASTM D 2240 800-362
    Contextual Info: 3 Scotch-Weld TM Epoxy Adhesive DP100 FR Technical Data July, 2011 Product Description 3M Scotch-Weld™ Epoxy Adhesive DP100 FR is a two-part flame retardant self-extinguishing version of Scotch-Weld DP100. It meets the UL94 V-O Burn Test requirements and has a work life of 4-8 minutes after mixing. It is ideal for


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    DP100 DP100. E61941) 225-3S-06 517-DP100FR DP100FR 1876-61T Oakite 3M DP100 oils bulk modulus DP100FR ASTM D 2240 800-362 PDF

    Contextual Info: IDT 7MB4009 2 16K x 16 CMOS STATIC RAM FR-4 DIP MODULE FEATURES: DESCRIPTION: • H ig h D en sity 512K 2(16K x 16) S ta tic RAM M odule • C ost effective surface m o un t c o m p o n e n ts m o un ted o n an e po xy lam in ate (FR-4) substrate T h e ID T7M B 4009 Is a 512K 2(16K x 16) h ig h -sp ee d static RAM


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    7MB4009 IDT7198 S13-97 PDF

    Contextual Info: MATERIAL DECLARATION SHEET Material Number CD2010 Series Product Line Diode Products Compliance Date 11 Nov 2006 RoHS Compliant No. Construction Element subpart Yes MSL Homogeneous Material 1 FR-5 Substrate 2 Wafer Die 1 Material weight [g] 0.012000 0.000479


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    CD2010 18-march PDF

    ON 4998

    Abstract: 25085
    Contextual Info: MATERIAL DECLARATION SHEET Material Number CD2320 Series Product Line Diode Products Compliance Date 1 Jan 2006 RoHS Compliant Yes No. 1 Construction Element subpart FR-5 MSL Homogeneous Material Substrate Material weight [g] 0.0392 2 GPRC Chip Die 0.0056


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    CD2320 Bisphen01 ON 4998 25085 PDF

    chip die

    Contextual Info: MATERIAL DECLARATION SHEET Material Number CD1206 Series Product Line Diode Products Compliance Date 1 Jan 2005 RoHS Compliant Yes No. 1 Construction Element subpart FR-5 MSL Homogeneous Material Substrate Material weight [g] 0.003742 2 Wafer Chip Die 0.0056


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    CD1206 Bisphen01 chip die PDF

    Contextual Info: MATERIAL DECLARATION SHEET Material Number CD1408 Series Product Line Diode Products Compliance Date 11 Nov 2006 RoHS Compliant No. 1 Construction Element subpart FR-5 Yes MSL Homogeneous Material Substrate 1 Material weight [g] 0.00672 2 GPRC Chip Die 0.00096


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    CD1408 Bisphen01 18-march PDF

    Contextual Info: Integrated Device Technology, Inc. IDT7MP4060 IDT7MP4095 128K x 32 CMOS STATIC RAM MODULES FEATURES: DESCRIPTION: • High density 4 megabit static RAM modules The IDT7M P4095/7M P4060 are 128K x 32 static RAM modules constructed on an epoxy laminate FR-4 substrate


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    IDT7MP4060 IDT7MP4095 64-pin 64-lead, 72-lead 7MP4095 PDF

    8192k

    Abstract: fr 4 substrate
    Contextual Info: ^EDI EDI8F16512C ELECTRONIC OESIGNS INC. « Commercial Eight Megabit SRAM Module 512Kx16 Static RAM CMOS, Module Features The EDI8F16512C is a 8192K bit CMOS Static RAM based on eight 128Kx8 Static RAMs mounted on a multi­ layered epoxy laminate FR-4 substrate.


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    EDI8F16512C 512Kx16 EDI8F16512C 8192K 128Kx8 EDI8F16512LP) 100ns fr 4 substrate PDF

    4045S

    Contextual Info: 256K x 32 BiCMOS/CMOS STATIC RAM MODULE IDT7MP4045 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 8 megabit static RAM module The IDT7MP4045 is a 256K x 32 static RAM module constructed on an epoxy laminate FR-4 substrate using 8


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    IDT7MP4045 IDT7MP4045 4045S PDF

    ma 2830

    Abstract: ma2830
    Contextual Info: PRELIMINARY IDT7MB4067 256Kx 32 CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 8 megabit static RAM module The IDT7MB4067 Is a 256K x 32 static RAM module constructed on an epoxy laminate FR-4 substrate using 8


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    256Kx IDT7MB4067 IDT7MB4067 200mV ma 2830 ma2830 PDF

    14566

    Abstract: EDI9F416128C100BNC EDI9F416128C70BNC EDI9F416128C85BNC EDI9F416128LP70BNC
    Contextual Info: EDI9F416128C 4x128Kx16 Static RAM CMOS, Module FEATURES DESCRIPTION • 4x128Kx16 bit CMOS Static The EDI9F416128C is a 8192K bit CMOS Static RAM based on eight 128Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR-4 substrate. • Random Access Memory


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    EDI9F416128C 4x128Kx16 EDI9F416128C 8192K 128Kx8 100ns EDI9F416128LP) EDI9F416128LP 14566 EDI9F416128C100BNC EDI9F416128C70BNC EDI9F416128C85BNC EDI9F416128LP70BNC PDF

    Contextual Info: DENSE-PAC 16 Megabit CMOS SRAM DPS512X32MXP MICROSYSTEMS PRELIMINARY DESCRIPTION: The DPS512X32MXP is a 68-pin surface mount module consisting of four 512K x 8 SRAM devices in plastic TSOP packages surface mounted on a FR-4 substrate. The module is available with "J"-Leads.


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    DPS512X32MXP DPS512X32MXP 68-pin 30A201 PDF

    Contextual Info: 256K X 32 BiCMOS/CMOS STATIC RAM MODULE dt) IDT7MP4045 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 8 megabit static RAM module The IDT7MP4045 is a 256K x 32 static RAM module constructed on an epoxy laminate FR-4) substrate using 8


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    IDT7MP4045 IDT7MP4045 PDF

    ma 2830

    Abstract: C2536
    Contextual Info: 256K x 32 CMOS STATIC RAM MODULE IDT7MB4067 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 8 megabit static RAM module The ID T7M B 4067 is a 256K x 32 static RAM module constructed on an epoxy laminate FR -4 substrate using 8


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    IDT7MB4067 200mV ma 2830 C2536 PDF

    Contextual Info: 1M x 32 CMOS STATIC RAM MODULE PRELIMINARY IDT7MP4104 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 4 megabyte static RAM module The IDT7MP4104 is a 1M x 32 static RAM module con­ structed on an epoxy laminate FR-4 substrate using 8 1M x


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    IDT7MP4104 IDT7MP4104 200mV PDF

    CD74FCT257

    Contextual Info: HADDIQ iT fr ^ T ^ V -!• CD74FCT373T, CD74FCT533T, CD74FCT573T, CD74FCT2373T, CD74FCT2573T September 1996 Fast CMOS Octal Transparent Latches Features Ordering Information ■ Advanced 0.8 micron CMOS Technology PART NUMBER TEMP. RANGE °C CD7 4FCT373ATM


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    CD74FCT373T, CD74FCT533T, CD74FCT573T, CD74FCT2373T, CD74FCT2573T 4FCT373ATM CD74FCT373ATQM CD74FCT373CTM CD74FCT373CTQM CD74FCT373DTM CD74FCT257 PDF

    Contextual Info: 2SA1201 TOSHIBA 2 SA 1 2 0 1 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS High Voltage :V C E O = —120V High Transition Frequency : fr = 120MHz(Typ.) P q = 1—2W (Mounted on Ceramic Substrate) Small Flat Package


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    2SA1201 120MHz 2SC2881 250mm2 PDF

    IDT7MB4048

    Abstract: 7MB4048
    Contextual Info:  IDT7MB4048 512K x 8 CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-density 4-megabit 512K x 8 Static RAM module • Fast access time: 25ns (max.) Surface mounted plastic packages on a 32-pin, 600 mil FR-4 DIP substrate


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    IDT7MB4048 32-pin, IDT7MB4048 32-pin 7MB4048 PDF

    V2658

    Abstract: p4008
    Contextual Info: 512K x 8 CMOS STATIC RAM MODULE IDT7MP4008S Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-density 4 megabit C M O S static RAM module • Fast access times — 30ns max. • Cost effective plastic surface mount RAM packages on a epoxy laminate (FR-4) substrate


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    36-pin IDT7MP4008S IDT7MP4008 7MP4008 V2658 p4008 PDF