10N60CT
Abstract: 10N60C FQPF10N60CT FQPF Series fqpf10n60c FQPF10N60C FQPF Series FQPF 10N60 FQP10N60C
Contextual Info: QFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features Description • 9.5A, 600V, RDS on = 0.73Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FQP10N60C
FQPF10N60C
FQPF10N60C
FQPF10N60CT
10N60CT
10N60C
FQPF Series fqpf10n60c
FQPF Series
FQPF
10N60
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Contextual Info: FRFET TM FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET Features Description • 9A, 600V, RDS on = 0.8Ω @VGS = 10 V • Low gate charge ( typical 44 nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
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FQP10N60CF
FQPF10N60CF
FQPF10N60CF
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FQPF Series
Abstract: FQP10N60C
Contextual Info: QFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features Description • 9.5A, 600V, RDS on = 0.73Ω @VGS = 10 V • Low gate charge ( typical 44 nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
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FQP10N60C
FQPF10N60C
FQPF10N60C
FQPF Series
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FQPF10N60CF
Abstract: FQP10N60C FQP10N60CF FQPF10N60C
Contextual Info: FRFET TM FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET Features Description • 9A, 600V, RDS on = 0.8Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FQP10N60CF
FQPF10N60CF
FQPF10N60CF
FQP10N60C
FQPF10N60C
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FQP10N60C
Abstract: FQPF10N60C
Contextual Info: TM FQP10N60C/FQPF10N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQP10N60C/FQPF10N60C
FQP10N60C
FQPF10N60C
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FQPF Series fqpf10n60c
Abstract: FQPF10N60C FQP10N60C
Contextual Info: QFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features Description • 9.5A, 600V, RDS on = 0.73Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FQP10N60C
FQPF10N60C
FQPF10N60C
FQPF Series fqpf10n60c
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FQPF Series fqpf10n60c
Abstract: FQP10N60C FQPF10N60C
Contextual Info: TM FQP10N60C/FQPF10N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQP10N60C/FQPF10N60C
FQPF Series fqpf10n60c
FQP10N60C
FQPF10N60C
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FQPF Series fqpf10n60c
Abstract: FQPF10N60C FQP10N60C
Contextual Info: QFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features Description • 9.5A, 600V, RDS on = 0.73Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FQP10N60C
FQPF10N60C
FQPF Series fqpf10n60c
FQPF10N60C
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