FQAF Search Results
FQAF Datasheets (74)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| FQAF10N80 |
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800V N-Channel MOSFET | Original | 686.67KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQAF10N80 |
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800V N-Channel MOSFET | Original | 713.76KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQAF11N40 |
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400 V N-Channel MOSFET | Original | 665.76KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQAF11N40 |
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QFET N-CHANNEL | Scan | 352.34KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQAF11N90 |
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900 V N-Channel MOSFET | Original | 678.01KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQAF11N90C |
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900V N-Channel Advance Q-FET C-series | Original | 645.64KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQAF12N60 |
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600 V N-Channel MOSFET | Original | 549.19KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQAF12N60 |
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QFET N-CHANNEL | Scan | 361.92KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQAF12P20 |
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200V P-Channel MOSFET | Original | 627.53KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQAF13N50 |
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500 V N-Channel MOSFET | Original | 691.7KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQAF13N50 |
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QFET N-CHANNEL | Scan | 326.36KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQAF13N80 |
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800 V N-Channel MOSFET | Original | 731.59KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQAF14N30 |
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300 V N-Channel MOSFET | Original | 681KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQAF15N70 |
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700 V N-Channel MOSFET | Original | 724.86KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| FQAF15N70 |
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QFET N-CHANNEL | Scan | 359.9KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQAF16N25 |
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250 V N-Channel MOSFET | Original | 683.8KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQAF16N25C |
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250V N-Channel Advance Q-FET C-Series | Original | 874.19KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQAF16N50 |
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N-Channel QFET | Original | 325.44KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQAF16N50 |
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500V N-Channel MOSFET | Original | 687.25KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQAF17N40 |
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400 V N-Channel MOSFET | Original | 675.15KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FQAF Price and Stock
onsemi FQAF11N90CMOSFET N-CH 900V 7A TO3PF |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQAF11N90C | Tube | 235 | 1 |
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Buy Now | |||||
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FQAF11N90C | Tube | 360 |
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Get Quote | ||||||
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FQAF11N90C | 59 |
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Buy Now | |||||||
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FQAF11N90C | Bulk | 360 |
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Buy Now | ||||||
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FQAF11N90C | 45,810 | 10 Weeks | 360 |
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Buy Now | |||||
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FQAF11N90C | 10 Weeks | 30 |
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Buy Now | ||||||
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FQAF11N90C | 96,480 |
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Get Quote | |||||||
Rochester Electronics LLC FQAF9P25MOSFET P-CH 250V 7.1A TO3PF |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQAF9P25 | Tube | 182 |
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Buy Now | ||||||
Rochester Electronics LLC FQAF6N90MOSFET N-CH 900V 4.5A TO3PF |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQAF6N90 | Tube | 151 |
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Buy Now | ||||||
onsemi FQAF7N90MOSFET N-CH 900V 5.2A TO3PF |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQAF7N90 | Tube | 360 |
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Buy Now | ||||||
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FQAF7N90 | 720 | 219 |
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Buy Now | ||||||
Rochester Electronics LLC FQAF7N90MOSFET N-CH 900V 5.2A TO3PF |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQAF7N90 | Tube | 167 |
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Buy Now | ||||||
FQAF Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: QFET N-CHANNEL FQAF34N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 60nC Typ. • Extended Safe Operating Area |
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FQAF34N20 | |
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Contextual Info: QFET N-CHANNEL FQAF19N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 31nC Typ. • Extended Safe Operating Area |
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FQAF19N20 | |
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Contextual Info: FQAF12P20 May 2000 QFET TM FQAF12P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQAF12P20 -200V, | |
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Contextual Info: FQAF16N50 N-Channel QFET MOSFET 500 V, 11.3 A, 320 mΩ Description Features • 11.3 A, 500 V, RDS on = 320 mΩ (Max.) @ VGS = 10 V, ID = 5.65 A • Low Gate Charge (Typ. 60 nC) • Low Crss (Typ. 35 pF) • 100% Avalanche Tested This N-Channel enhancement mode power MOSFET is |
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FQAF16N50 | |
FQAF17P10Contextual Info: TM FQAF17P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQAF17P10 -100V, FQAF17P10 | |
FQAF70N10Contextual Info: FQAF70N10 August 2000 QFET TM FQAF70N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQAF70N10 FQAF70N10 | |
FQAF65N06Contextual Info: QFET TM FQAF65N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQAF65N06 FQAF65N06 | |
FQAF8N80Contextual Info: QFET TM FQAF8N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQAF8N80 FQAF8N80 | |
FQAF33N10LContextual Info: FQAF33N10L September 2000 QFET TM FQAF33N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQAF33N10L FQAF33N10L | |
FQAF70N08Contextual Info: FQAF70N08 August 2000 QFET TM FQAF70N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQAF70N08 FQAF70N08 | |
FQAF22P10Contextual Info: TM FQAF22P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQAF22P10 -100V, FQAF22P10 | |
FQAF16N25CContextual Info: FQAF16N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQAF16N25C FQAF16N25C | |
FQAF5N90Contextual Info: FQAF5N90 September 2000 QFET TM FQAF5N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQAF5N90 FQAF5N90 | |
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Contextual Info: QFET P-CHANNEL FQAF22P10 FEATURES • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 40nC Typ. • Extended Safe Operating Area |
OCR Scan |
FQAF22P10 | |
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Contextual Info: QFET N-CHANNEL FQAF19N20 FEATURES BV qss = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 31 nC Typ. • |
OCR Scan |
FQAF19N20 | |
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Contextual Info: QFET N-CHANNEL FQAF30N40 FEATURES BV qss = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 90nC Typ. • |
OCR Scan |
FQAF30N40 | |
FQAF7N60Contextual Info: FQAF7N60 April 2000 QFET TM FQAF7N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQAF7N60 FQAF7N60 | |
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Contextual Info: FQAF11N90C N-Channel QFET MOSFET 900 V, 7.0 A, 1.1 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state |
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FQAF11N90C | |
FQAF7N90
Abstract: 900V N-Channel QFET
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FQAF7N90 FQAF7N90 900V N-Channel QFET | |
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Contextual Info: QFET N-CHANNEL FQAF48N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 100nC Typ. • Extended Safe Operating Area |
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FQAF48N20 100nC | |
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Contextual Info: QFET N-CHANNEL FQAF16N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 30nC Typ. • Extended Safe Operating Area |
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FQAF16N25 | |
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Contextual Info: QFET N-CHANNEL FQAF11N40 FEATURES BVDSS = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 27nC Typ. • |
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FQAF11N40 | |
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Contextual Info: QFET N-CHANNEL FQAF7N80 FEATURES BVDSS = 800V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 40nC Typ. • Extended Safe Operating Area |
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FQAF7N80 | |
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Contextual Info: QFET N-CHANNEL FQAF27N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 60nC Typ. • Extended Safe Operating Area |
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FQAF27N25 | |