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    FPD200 DIE Search Results

    FPD200 DIE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    FS1S0110E1
    		Amphenol Communications Solutions MiniSAS, High Speed Input Output Connector, DIE CAST SHELL PDF
    FS1SF114E1
    		Amphenol Communications Solutions MiniSAS, High Speed Input Output Connector, DIE CAST SHELL PDF
    FS2SF1124E1
    		Amphenol Communications Solutions MiniSAS, High Speed Input Output Connector, DIE CAST SHELL PDF
    FS2SF214F1
    		Amphenol Communications Solutions MiniSAS, High Speed Input Output Connector, DIE CAST SHELL PDF
    FS1SF214E1
    		Amphenol Communications Solutions MiniSAS, High Speed Input Output Connector, DIE CAST SHELL PDF

    FPD200 DIE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FPD200

    Abstract: FPD200 DIE MIL-HDBK-263 bjt 137 FPD200-000
    Contextual Info: FPD200 FPD200General Purpose pHEMT Die GENERAL PURPOSE pHEMT DIE Package Style: Bare Die Product Description Features The FPD200 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx200μm Schottky barrier gate,


    Original     		FPD200 FPD200General FPD200 25mx200m 19dBm 12GHz 18GHz FPD200-000 DS090519 FPD200 DIE MIL-HDBK-263 bjt 137 FPD200-000 PDF

    FPD200 DIE

    Contextual Info: FPD200 FPD200General Purpose pHEMT Die GENERAL PURPOSE pHEMT DIE Package Style: Bare Die Product Description Features The FPD200 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx200μm Schottky barrier gate,


    Original     		FPD200 FPD200General FPD200 mx200Î 19dBm 12GHz 18GHz FPD200-000 DS090519 FPD200 DIE PDF

    FPD200

    Abstract: FPD200 DIE
    Contextual Info: FPD200 GENERAL PURPOSE PHEMT DIE Datasheet v2.1 FEATURES: • • • • • LAYOUT: 19 dBm Output Power P1dB 12 dB Power Gain at 12 GHz 17 dB Maximum Stable Gain at 12 GHz 12 dB Maximum Stable Gain at 18 GHz 45% Power-Added Efficiency GENERAL DESCRIPTION:


    Original     		FPD200 FPD200 22A114. MIL-STD-1686 MIL-HDBK-263. FPD200 DIE PDF

    FPD200

    Abstract: MIL-HDBK-263
    Contextual Info: FPD200 Datasheet v3.0 GENERAL PURPOSE PHEMT DIE LAYOUT: FEATURES: • • • • • 19 dBm Output Power P1dB 13 dB Power Gain at 12 GHz 17 dB Maximum Stable Gain at 12 GHz 12 dB Maximum Stable Gain at 18 GHz 45% Power-Added Efficiency GENERAL DESCRIPTION:


    Original     		FPD200 FPD200 MIL-HDBK-263 PDF

    FPD200

    Abstract: MIL-HDBK-263 400x400
    Contextual Info: FPD200 GENERAL PURPOSE PHEMT • • DRAIN BOND PAD 1X FEATURES ♦ 19 dBm Linear Output Power at 12 GHz ♦ 12 dB Power Gain at 12 GHz ♦ 17 dB Maximum Stable Gain at 12 GHz ♦ 12 dB Maximum Stable Gain at 18 GHz ♦ 45% Power-Added Efficiency SOURCE


    Original     		FPD200 FPD200is FPD200 MIL-HDBK-263 400x400 PDF

    fpd2000as

    Abstract: FPD200 CB100 FPD20 RO4003 InP HBT transistor low noise
    Contextual Info: FPD2000AS FPD2000AS 2W Packaged Power pHEMT 2W PACKAGED POWER pHEMT Package Style: AS Product Description Features The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power applications in L-Band. The surface-mount package has been optimized


    Original     		FPD2000AS FPD2000AS 33dBm 46dBm 85GHz) EB2000AS-AA 14GHz) EB2000AS-AD EB2000AS-AG FPD200 CB100 FPD20 RO4003 InP HBT transistor low noise PDF

    P 9806 AD

    Contextual Info: FPD2000AS FPD2000AS 2W Packaged Power pHEMT 2W PACKAGED POWER pHEMT RoHS Compliant and Pb-Free Package: 4.4mmx3.8mm Product Description Features The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power


    Original     		FPD2000AS FPD2000AS 33dBm 46dBm 880MHz) EB-2000AS-AB 85GHz) EB-2000AS-AA P 9806 AD PDF

    EV-SP-000044-001

    Abstract: FPD200 CB100 FPD20 FPD2000AS RO4003 cw 7687 A114 es IPC 9701 W2020
    Contextual Info: FPD2000AS FPD2000AS 2W Packaged Power pHEMT 2W PACKAGED POWER pHEMT NOT FOR NEW DESIGNS Package Style: AS Product Description Features „ „ „ „ „ Optimum Technology Matching Applied „ GaAs HBT „ GaAs MESFET DE InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT


    Original     		FPD2000AS 33dBm 46dBm FPD2000AS 85GHz) EB2000AS-AA DS100125 EV-SP-000044-001 FPD200 CB100 FPD20 RO4003 cw 7687 A114 es IPC 9701 W2020 PDF

    VCO-102

    Abstract: NBB-502 spf-5189 RF5643wda cxe-2089
    Contextual Info: RFMD Product Selection Guide 2011 - 2012 Multiple Markets. Multiple Choices. One RFMD. ® Multiple Markets. Multiple Choices. One RFMD . ® RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high


    Original     		PDF

    RF5632

    Abstract: PNP-1090-P22 UMX-254-D16-G UMX-333-D16-G RF1194 UMX-406-D16 SPF-5043Z UMX-519-D16-G SHF-0289 spf-5122z
    Contextual Info: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product


    Original     		PDF

    pnp-1500-p22

    Abstract: UMZ-1147-R16-G RF5632 UMX-254-D16-G SPA-1002-27H UMX-119-D16-G spf-5189z ums-2000-A16-g spf-5122 UMX-406-D16
    Contextual Info: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product


    Original     		PDF