FP-32D HITACHI Search Results
FP-32D HITACHI Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Hitachi DSAUTAZ006
Abstract: FP32D
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HM62V8512C HM62V8512CLFP FP-32D) FP-32D HM62V8512CLTT TTP-32D) TTP-32D HM62V8512CLRR Hitachi DSAUTAZ006 FP32D | |
Hitachi DSAUTAZ005
Abstract: ttp 021
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HM62W8512B HM62W8512BLFP FP-32D) FP-32D HM62W8512BLTT TTP-32D) TTP-32D HM62W8512BLRR Hitachi DSAUTAZ005 ttp 021 | |
FP-32D
Abstract: FP32D FP-32D hitachi Hitachi DSAUTAZ005
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HM628512BFP FP-32D) FP-32D FP32D FP-32D hitachi Hitachi DSAUTAZ005 | |
Hitachi DSAUTAZ005Contextual Info: HM62V8512B Series Package Dimensions HM62V8512BLFP Series FP-32D Unit: mm 20.45 20.95 Max 17 11.30 32 1 1.27 *0.40 ± 0.08 0.38 ± 0.06 0.10 0.15 M *Dimension including the plating thickness Base material dimension 0.12 0.15 +– 0.10 1.00 Max *0.22 ± 0.05 |
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HM62V8512B HM62V8512BLFP FP-32D) FP-32D HM62V8512BLTT TTP-32D TTP-32D HM62V8512BLRR Hitachi DSAUTAZ005 | |
Contextual Info: HN62328B Series Preliminary 8M 1M x 8-b tt M ask RO M • S1E O ESC B m O H » " ', ',< ,b S n 3 H ITA C H I/ ‘H” 7 7 5 " 378 ■ ■ Access Time 150 ns 200 ns 150ns 200 ns Package 32-pin Plastic DIP (DP-32) 32-lead Plastic SOP (FP-32D) PIN DESCRIPTION |
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HN62328B 150ns 32-pin DP-32) 32-lead FP-32D) HN62328BP HN62328BF HN62328BP-15 HN62328BP-20 | |
Contextual Info: HM628128B Series 131,072-word x 8-bit High speed CMOS Static RAM HITACHI ADE-203-243C Z Rev. 3.0 Aug. 10, 1996 Description The Hitachi HM628128B is a CMOS static RAM organized 131,072-word x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 Jim Hi-CMOS shrink process |
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HM628128B 072-word ADE-203-243C | |
58C1001Contextual Info: HN58C1001 Series 131072-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-028F Z Rev. 6.0 Apr. 8, 1997 Description The Hitachi HN58C1001 is a electrically erasable and programmable ROM organized as 131072-word x 8bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS |
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HN58C1001 131072-word ADE-203-028F 128-byte 58C1001 | |
HN27C101P20
Abstract: HN27C101P
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HN27C1 131072-word HN27C101P HN27C101P/FP HN27C101P20 | |
Contextual Info: HM628128B Series 1 M SRAM 128-kword x 8-bit HITACHI ADE-203-243E (Z) Rev. 5.0 Nov. 1997 Description The H itachi HM 628128B is a CMOS static RAM organized 131,072-word x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 Jim Hi-CMOS shrink process |
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HM628128B 128-kword ADE-203-243E 628128B 072-word | |
hm658512lttContextual Info: NEW PRODUCT HM658512 Series 524288-Word X 3-Bit High Speed Pseudo Static RAM Rev. 5 Sep. S, 1991 H ITA C H I - Pr e l i m i n a r y Features • Single 5 V + 10 Ï • High speed Access time ^CE access time . 80/100/120 ns Cycle time Random read/write cycle time.130/160/190 ns |
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HM658512 524288-Word 32-pin HM658512DP hm658512ltt | |
Contextual Info: HM62W8128B-SR Series 131,072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-598 Z Preliminary Rev. 0.0 Aug. 10, 1996 D escription The Hitachi HM62W 8128B is a CMOS static RAM organized 131,072-word x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 ^m Hi-CMOS shrink process |
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HM62W8128B-SR 072-word ADE-203-598 HM62W 8128B 525-mil 460-mil D-85622 W8128B-SR | |
Contextual Info: HM62W8128B Series 131,072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-656A Z Rev. 1.0 Oct. 14, 1996 Description The Hitachi HM62W8128B is a CMOS static RAM organized 131,072-word x 8-bit. It realizes higher density, higher performance, and low power consumption by employing 0.8 J i m Hi-CMOS shrink process |
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HM62W8128B 072-word ADE-203-656A 525-mil 460-mil | |
hn58v1001Contextual Info: HN58V1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function HITACHI ADE-203-314G (Z) Rev. 7.0 Oct. 31, 1997 Description The Hitachi HN58V1001 is a electrically erasable and programmable ROM organized as 131072-word X 8bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS |
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HN58V1001 128-kword ADE-203-314G 131072-word 128-byte HN58V1001R TFP-32DAR) FP-32D, TFP-32DA | |
HN58C66 SeriesContextual Info: HN58C66 Series 8192-word x 8-bit CMOS Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-375F Z Rev. 6.0 Apr. 12, 1995 Description The Hitachi HN58C66 is a electrically erasable and programmable ROM organized as 8192-word X 8-bit. It realizes high speed, low power consumption, and a high level of reliability, employing advanced MNOS |
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HN58C66 8192-word ADE-203-375F 32-byte HN58C66FP FP-28D) 40-Oos HN58C66 Series | |
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Contextual Info: HN58C257 Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-124G Z Rev. 7.0 May 25, 1995 Description The Hitachi HN58C257 is a electrically erasable and programmable ROM organized as 32768-word x 8-bit. It realizes high speed, low power consumption, and a high level of reliability, employing advanced MNOS |
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HN58C257 32768-word ADE-203-124G 64-byte HN58C HN58C257T | |
Contextual Info: HM628512A Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-640A Z Rev. 1.0 Dec. 2,1996 Description The Hitachi HM628512A is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance, and low power consumption by employing 0.5 jun Hi-CMOS process technology. The |
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HM628512A 524288-word ADE-203-640A 512-kword 525-mil 400-mil 600-mil 441bg03 | |
658512ALFP
Abstract: 658512 000nS
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HM658512AI 512-kword ADE-203-286C 524288-word 32-pin ns/100 ns/120 ns/160 658512ALFP 658512 000nS | |
658512Contextual Info: HM658512AI Series 4 M PSRAM 512-kword x 8-bit 2 k Refresh HITACHI ADE-203-286C(Z) Rev. 3.0 March 15, 1999 Description The Hitachi HM658512AI is a 4-Mbit pseudo static RAM organized 524288-word x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 |jm Hi-CMOS process |
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HM658512AI 512-kword ADE-203-286C 524288-word 32-pin ns/100 ns/120 ns/160 658512 | |
Contextual Info: HM658512A Series 4 M PSRAM 512-kword x 8-bit 2 k Refresh HITACHI ADE-203-218C(Z) Rev. 3.0 Nov. 1997 Description The Hitachi HM658512A is a CMOS pseudo static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 (Am Hi-CMOS process |
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HM658512A 512-kword ADE-203-218C 525-mil 460-mil 600-mil TTP-32D | |
62256BLSPContextual Info: HM62256B Series 256k SRAM 32-kword x 8-bit HITACHI ADE-203-135F (Z) Rev. 6.0 Nov. 13, 1997 Description The Hitachi HM62256B Series is a CMOS static RAM organized 32,768-word x 8-bit. It realizes higher performance and low power consumption by employing 0.8 |jm Hi-CMOS process technology. The |
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HM62256B 32-kword ADE-203-135F 768-word ns/70 ns/85 62256BLSP | |
HTC02Contextual Info: HM62V8128 Series Product Preview 131072-Word x 8-Bit High Speed CMOS Static RAM Ordering Information Description T h e H ita c h i H M 6 2 V 8 1 2 8 is a C M O S s ta tic R A M o rg a n iz e d 128 k w o rd X 8 b it. It re a liz e s h i g h e r d e n s i t y , h i g h e r p e r f o r m a n c e a n d lo w |
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HM62V8128 131072-Word HTC02 | |
TRANSISTOR 132-gd
Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
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06o3H TRANSISTOR 132-gd TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes | |
FCR-400K
Abstract: TDK FCR400K CSB4 HD44820 hitachi hmcs HEXAA hitachi pmos microcomputer DP-64S HD44828 HMCS45C
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HMCS45C HD44820) HMCS45CL HD44828) HMCS45C; HMCS45CL; FP-54_ FCR-400K TDK FCR400K CSB4 HD44820 hitachi hmcs HEXAA hitachi pmos microcomputer DP-64S HD44828 | |
DP-64S
Abstract: HMCS47C HD44860 HD44868 hitachi pmos microcomputer CODE PJ 62-00 CSB800A HMCS47CL
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HMCS47C HD44860) HMCS47CL HD44868) HMCS47C. HMCS47CL HMCS47C DP-64S HD44860 HD44868 hitachi pmos microcomputer CODE PJ 62-00 CSB800A |