FOR HIGH-FREQUENCY STAGES UP TO 300 MHZ Search Results

BF543

Abstract: MARKING G2 Telefunken diode marking BF
Contextual Info: BF 543 TELEFUNKEN Semiconductors N-Channel MOS-Fieldeffect Triode. Depletion Mode. Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz. Features DIntegrated gate protection diode DLow noise figure

S525T

Contextual Info: S525T Vishay Telefunken N–Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz. Features D Integrated gate protection diodes D Low feedback capacitance

Contextual Info: _ S525T Vishay Telefunken N-Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz. Features • Integrated gate protection diodes • Low feedback capacitance

Contextual Info: S525T Vishay Telefunken N–Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz. Features D Integrated gate protection diodes D Low feedback capacitance

S525T

Contextual Info: S525T Vishay Telefunken N–Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz. Features D Integrated gate protection diodes D Low feedback capacitance

BF543

Abstract: MARKING LD
Contextual Info: BF543 N-Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz. Features D Integrated gate protection diode D Low noise figure D Low feedback capacitance

BF543

Contextual Info: BF543 N-Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz. Features D Integrated gate protection diode D Low noise figure D Low feedback capacitance

S525T

Contextual Info: S525T N-Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz Features D Integrated gate protection diode D Low feedback capacitance D Low noise figure

S525T

Contextual Info: S525T N-Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz Features D Integrated gate protection diode D Low feedback capacitance D Low noise figure

S525T

Abstract: s525 1s525
Contextual Info: S 525 T TELEFUNKEN Semiconductors N-Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz Features D Integrated gate protection diode D Low noise figure

bf987

Contextual Info: SIEMENS Silicon N Channel MOSFET Triode BF 987 • For high-frequency stages up to 300 MHz, preferably in FM applications • High overload capability Type Marking Ordering Code BF 987 - Q62702-F35 Pin Configuration 1 2 3 D S Package1 G TO-92 Maximum Ratings

mosfet bf 987

Abstract: BF 987 BF987 98-7
Contextual Info: Silicon N Channel MOSFET Triode ● For high-frequency stages up to 300 MHz, preferably in FM applications ● High overload capability BF 987 Type Marking Ordering Code BF 987 – Q62702-F35 Pin Configuration 1 2 3 D S Package1 TO-92 G Maximum Ratings Parameter

Contextual Info: Temic BF543 S e m i c o n d u c t o r s N-Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. ^ Applications High frequency stages up to 300 MHz. Features • Integrated gate protection diode •

S525T

Contextual Info: Temic S525T S e m i c o n d u c t o r s N-Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. ^ “ Applications High frequency stages up to 300 MHz Features • integrated gate protection diode

bb515

Abstract: BF999
Contextual Info: BF999 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF999 Marking LDs 1=G Pin Configuration 2=D 3=S Package

BF 22 W

Contextual Info: BF 543 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications
ISDD = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 543 LDs Pin Configuration

bf999

Abstract: For high-frequency stages up to 300 MHz triode sot23 sot-23 MARKING GU
Contextual Info: SIEMENS Silicon N Channel MOSFET Triode BF 999 • For high-frequency stages up to 300 MHz, preferably in FM applications Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 BF 999 LB Q62702-F1132 G D Package1) S SOT-23 Maximum Ratings Parameter

triode sot23

Abstract: bf999 Q62702-F1132 MARKING CODE DG SOT 23
Contextual Info: Silicon N Channel MOSFET Triode ● BF 999 For high-frequency stages up to 300 MHz, preferably in FM applications Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) BF 999 LB Q62702-F1132 G SOT-23 D S Maximum Ratings Parameter Symbol

Contextual Info: Temic BF543 S e m i c o n d u c t o r s N-Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz. Features • Integrated gate protection diode • Low noise figure

block diagram of NTSC COLOUR SYSTEM

Abstract: "NTSC Decoder" TDA4510 TDA4555 TDA4570
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA4570 NTSC decoder Product specification File under Integrated Circuits, IC02 August 1986 Philips Semiconductors Product specification NTSC decoder TDA4570 GENERAL DESCRIPTION The TDA4570 is an integrated 3,58 MHz or 4,43 MHz NTSC decoder. It is pin sequence compatible with multi-standard

IEC134

Abstract: TDF8704 TDF8704T x90 v7
Contextual Info: Philips Semiconductors Product specification 8-bit high-speed analog-to-digital converter TDF8704 FEATURES APPLICATIONS • 8-bit resolution • General purpose high-speed analog-to-digital conversion for extended temperature applications • Sampling rate up to 50 MHz

Contextual Info: 54F 74F191 Up Down Binary Counter with Preset and Ripple Clock General Description Features Commercial Y Y Y Y High-Speed 125 MHz typical count frequency Synchronous counting Asynchronous parallel load Cascadable e The ’F191 is a reversible modulo-16 binary counter featuring synchronous counting and asynchronous presetting

Contextual Info: Low Cost DC-150 MHz Variable Gain Amplifier AD8330* FEATURES Fully Differential Signal Path May also be Used with Single-Sided Signals Inputs from 0.3 mV to 1 V rms, Rail-Rail Outputs Differential RIN = 1 k⍀; ROUT Each Output 75 ⍀ Automatic Offset Compensation (Optional)

Applications AD8330

Abstract: AD8330 AD8330ACP AD8330ACP-REEL AD8330ACP-REEL7 AD8330ARQ HD22 HD32
Contextual Info: Low Cost DC-150 MHz Variable Gain Amplifier AD8330* FEATURES Fully Differential Signal Path May also be Used with Single-Sided Signals Inputs from 0.3 mV to 1 V rms, Rail-Rail Outputs Differential RIN = 1 k⍀; R OUT Each Output 75 ⍀ Automatic Offset Compensation (Optional)