FOR HIGH-FREQUENCY STAGES UP TO 300 MHZ Search Results
FOR HIGH-FREQUENCY STAGES UP TO 300 MHZ Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| LXMSJZNCMH-225 | Murata Manufacturing Co Ltd | Ultra small RAIN RFID chip tag | |||
| LXMS21NCMH-230 | Murata Manufacturing Co Ltd | Ultra small RAIN RFID chip tag | |||
| GC331AD7LQ103KX18D | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive | |||
| GC331CD7LP683KX19L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive | |||
| GC332QD7LP104KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
FOR HIGH-FREQUENCY STAGES UP TO 300 MHZ Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
BF543
Abstract: MARKING G2 Telefunken diode marking BF
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BF543 D-74025 MARKING G2 Telefunken diode marking BF | |
S525TContextual Info: S525T Vishay Telefunken N–Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz. Features D Integrated gate protection diodes D Low feedback capacitance |
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S525T S525T 200ges D-74025 20-Jan-99 | |
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Contextual Info: _ S525T Vishay Telefunken N-Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz. Features • Integrated gate protection diodes • Low feedback capacitance |
OCR Scan |
S525T S525T 20-Jan-99 S525T_ | |
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Contextual Info: S525T Vishay Telefunken N–Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz. Features D Integrated gate protection diodes D Low feedback capacitance |
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S525T S525T D-74025 20-Jan-99 | |
S525TContextual Info: S525T Vishay Semiconductors N–Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz. Features D Integrated gate protection diodes D Low feedback capacitance |
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S525T S525T D-74025 20-Jan-99 | |
S525TContextual Info: S525T Vishay Telefunken N–Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz. Features D Integrated gate protection diodes D Low feedback capacitance |
Original |
S525T S525T 200design D-74025 20-Jan-99 | |
BF543
Abstract: MARKING LD
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BF543 BF543 D-74025 15-Apr MARKING LD | |
BF543Contextual Info: BF543 N-Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz. Features D Integrated gate protection diode D Low noise figure D Low feedback capacitance |
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BF543 BF543 450the D-74025 11-Apr-97 | |
S525TContextual Info: S525T N-Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz Features D Integrated gate protection diode D Low feedback capacitance D Low noise figure |
Original |
S525T S525T D-74025 18-Apr-96 | |
S525TContextual Info: S525T N-Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz Features D Integrated gate protection diode D Low feedback capacitance D Low noise figure |
Original |
S525T S525T D-74025 26-Mar-97 | |
S525T
Abstract: s525 1s525
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S525T D-74025 s525 1s525 | |
bf987Contextual Info: SIEMENS Silicon N Channel MOSFET Triode BF 987 • For high-frequency stages up to 300 MHz, preferably in FM applications • High overload capability Type Marking Ordering Code BF 987 - Q62702-F35 Pin Configuration 1 2 3 D S Package1 G TO-92 Maximum Ratings |
OCR Scan |
Q62702-F35 fl235 bf987 | |
mosfet bf 987
Abstract: BF 987 BF987 98-7
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Q62702-F35 mosfet bf 987 BF 987 BF987 98-7 | |
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Contextual Info: BF999 3 Silicon N-Channel MOSFET Triode • For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D 3=S |
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BF999 VPS05161 Apr-06-2005 | |
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Contextual Info: BF543 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications IDSS = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF543 LDs Pin Configuration |
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BF543 VPS05161 | |
BF999
Abstract: triode sot23
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BF999 VPS05161 BF999 triode sot23 | |
BF999Contextual Info: BF999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D Package |
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BF999 VPS05161 Nov-08-2002 BF99cal BF999 | |
BF999
Abstract: triode sot23
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BF999 BF999 triode sot23 | |
BCW66Contextual Info: BF999E6393 Silicon N-Channel MOSFET Triode • For high-frequency stages up to 300 MHz 2 3 preferable in FM applications 1 • Pb-free ROHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! |
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BF999E6393 BCW66 | |
marking code 11s
Abstract: MARKING CODE 21S BF543
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BF543 VPS05161 marking code 11s MARKING CODE 21S BF543 | |
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Contextual Info: BF999 Silicon N-Channel MOSFET Triode • For high-frequency stages up to 300 MHz 2 3 preferably in FM applications 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! |
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BF999 | |
BF543
Abstract: triode sot23
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BF543 VPS05161 Jun-28-2001 EHT07033 EHT07034 BF543 triode sot23 | |
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Contextual Info: Temic BF543 S e m i c o n d u c t o r s N-Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. ^ Applications High frequency stages up to 300 MHz. Features • Integrated gate protection diode • |
OCR Scan |
BF543 BF543 D-74025 11-Apr-97 | |
S525TContextual Info: Temic S525T S e m i c o n d u c t o r s N-Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. ^ “ Applications High frequency stages up to 300 MHz Features • integrated gate protection diode |
OCR Scan |
S525T S525T 26-Mar-97 | |