FO-91 TRANSISTOR PACKAGE Search Results

IRG4BC10KD

Contextual Info: PD -91 73 4A International IO R R e c tifi ST IRG4BC10KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • High sh o rt circu it rating op tim ize d fo r m otor control, tsC = 1 0 js, @ 3 6 0 V V CE (start , T j = 125°C,

E 7805 8pin ic

Abstract: MAX691 MAX690 MAX690CPA MAX691CPE 7805 regulator pin diagram
Contextual Info: / k l/ J X I / k l Microprocessor Supervisory Circuits The MAX690, MAX692 and MAX694 are supplied in 8-pin packages and provide four functions: 1 A Reset output during power-up, power-down and brownout conditions.

03N06C

Abstract: 03N06CLE MC 140 transistor
Contextual Info: ili HARRIS RLD03N06CLE, uu s e m ic o n d u c to r RLD03N06CLESM, RLP03N06CLE 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packages JEDEC TO-220AB • 0.30A , 60V •

transistor LT 5210

Abstract: c184* transistor c1837 transistor C1849R LT 5210 c1843 c1840 C1835 33L25 C1847
Contextual Info: EO HIGH-PERFORMANCE AIGaAs PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECÍHDmCS 1 I - • MCT5210 MCT5211 DESCRIPTION PACKAGE DIMENSIONS The MCT-521X are high perform ance CMOS/LSTTL logic com patible pholotransistor type optically coupled isolator products. They are constructed using a very low

C1847

Contextual Info: I HIGH-PERFORMANCE AIGaAs PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 1 I I MCT5210 MCT5211 PACKAGE DIMENSIONS DESCRIPTION The MCT-521X are high performance CMOS/LSTTL logic compatible phototransistor type optically coupled isolator products. They are constructed using a very low

Contextual Info: •43D5E71 Q054?flfl ■ HAS RFP17N06L H a r r is A u g u s t 19 91 N-Channel Logic Level Enhancem ent-Mode Power Field-Effect Transistor Package Features T O - 220AB • 17A, 60 V TOP VIEW • r D S 0 N = 0 .1 o o n DRAIN (FLANGE) • Design O ptim ized for 5 V G ate Drives

lp1n08

Abstract: N-Channel Enhancement-Mode Power Field-Effect transistor
Contextual Info: S h a r r is January 1 9 9 4 R L P 1 N 0 8 L E Current Limited ESD Protected N-Channel Enhancement-Mode Power Field-Effect Transistor F e a tu re s Package • 1A, 80V T O -2 2 0 A B TOP VIEW • rDS ON = 0.75H • iLIM ITa* + 1 5 0 ° C . 1.5A Max

AT-60510

Abstract: S parameters of 5.8 GHz transistor
Contextual Info: W Ap% AT-60510 Up to 6 GHz Low Noise Silicon Bipolar Transistor HEWLETT wL'f!ÆPA CK A R D Features • • • • • 100 mil Package Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 dB typical at 4.0 GHz High Associated Gain: 12.0 dB typical at 2.0 GHz

Contextual Info: SIEMENS BUZ 91 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 91 Vds 600 V b 8.5 A ^DS on Package Ordering Code 0.8 Í2 TO-220 AB C67078-S1342-A2 Maximum Ratings Parameter Symbol Continuous drain current

NE42484C

Abstract: transistor NEC D 586 NEC Ga FET marking L NE42484C-T1 28609 low noise FET NEC U ne42484 nec gaas fet marking NEC 2533 NEC Ga FET
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

Contextual Info: Product Description SXA-289 Stanford M icrodevices’ SXA-289 am plifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT am plifier housed in low-cost surface-m ountable plastic package. These HBT am plifiers are fabricated using m olecular beam epitaxial growth technology which produces

TCHT1130

Abstract: Ex-90C
Contextual Info: J TELEFUNKEN ELECTRONIC 4ME D HH fi^GO^ti 001117= T E i ALG6 Optocouplers ' T ' H I - $ "J? Standard Opto Isolators w ith Transistor Output Package Type C haracteristics UL-recognized: CTR File No. E 76414 Dimensions see page 56 - _ i j bW 1T T m N ; liJ

" transistor" fgs 3

Abstract: Fly DS 100
Contextual Info: SIEMENS BUZ 91 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 91 b 8.5 A W>s 600 V ^bs on 0.8 n Package Ordering Code TO-220 AB C67078-S1342-A2 Maximum Ratings Parameter Symbol Continuous drain current

ZO 103 MA 75 533

Abstract: AT-00572
Contextual Info: What H EW LETT 1"EM P A C K A R D AT-00572 Up to 1 GHz General Purpose Silicon Bipolar Transistor Features TO-72 Package • 19.0 dBm typical Pi dB at 1.0 GHz • 6.0 dB typical Gi dB at 1.0 GHz • 2.3 dB typical NFo at 1.0 GHz • High Gain-Bandwidth Product: 6.5 GHz typical h

Contextual Info: AVANTEK Q INC 2D E avantek D im n b fc 00Dti4b3 1 AT-41410 Up to 6 GHz Low Noise Silicon Bipolar Transistor T r ' £ i - ‘Z . l Avantek 100 mil Package Features • Low Noise Figure: 1.6 d B typical at 2.0 GHz 3.0 d B typical at 4.0 GHz • High Associated Galn:14.0 dB typical at 2.0 GH z

Contextual Info: AT-41410 Up to 6 GHz Low Noise Silicon Bipolar Transistor Who IHEWLETT mL'nM P a c k a r d Features • • • • 100 m il Package Low Noise Figure: 1.6 dB typ ica l at 2.0 GHz 3.0 dB typ ica l at 4.0 GHz High A ssociated Gain: 14.0 dB typ ica l at 2.0 GHz

avantek

Abstract: Avantek amplifier AT-41410 T-31-21 Avantek, Inc ic and 4081 AVANTEK oscillator
Contextual Info: AVANTEK Q INC imntt ooobMb3 i 2GE D avantek AT-41410 Up to 6 GHz Low Noise Silicon Bipolar Transistor Z .\ Features • • • • Avantek 100 mil Package Low Noise Figure: 1.6 dB typical at 2.0 GHz 3.0 dB typical at 4.0 GHz High Associated Galn:14.0 dB typical at 2.0 GHz

avantek

Abstract: Avantek, Inc AT-42010 T-31-21 AVANTEK oscillator
Contextual Info: EOE D A V A N T E K INC Q • GGQhMfih T AT-42010 Up to 6 GHz Medium Power Silicon Bipolar Transistor- avan tek ' - Avantek 100 mil Package Features • High Output Power: 12.0 dBm typical Pi ¿b at 2.0 GHz 20.5 dBm typical Pi dB at 4.0 GHz • High Gain at 1 dB Compression:

BFT92

Abstract: "MARKING CODE W1*" GHz PNP transistor marking G SOT323 Transistor SOT323 Marking 87 SOT323 WM BFT92W marking L2 SOT23 6
Contextual Info: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT92W uses the same crystal as the SOT23 version, BFT92. • Gold metallization ensures

TC-2509

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 2SK2138, 2SK2138-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE D E S C R IP T IO N The 2SK2138, 2SK2138-Z is N-channei Power MOS Field Effect PACKAGE DIMENSIONS in m illim e te rs} Tra n sisto r designed fo r high voltage sw itch in g applications.

ATF-13484

Abstract: ATF13484-STR
Contextual Info: ATF-13484 1-16 GHz Low Noise Gallium Arsenide FET What H EW LETT mlXM PA C K A R D 84 Plastic Package Features • • • • • Low Noise Figure: 1.0 dB typical at 4 GHz High Associated Gain: 14.0 dB typical at 4 GHz High Output Power: 18.0 dBm typical Pi dB

Contextual Info: Central CMXT2207 Semiconductor Corp. SURFACE MOUNT DUAL COMPLEMENTARY SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXT2207 type is a dual complementary silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur­ face mount package, designed for small signal

NE334501

Abstract: transistor k 2761 NEC D 822 P NEC Ga FET marking C nec gaas fet marking NEC Ga FET marking A ap 2761 l transistor NE334S01 low noise FET NEC U
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE334S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons.

Contextual Info: {Product*, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MRF839F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 6L FLG The MRF839F is Designed for Class AB, Common Emitter