FO-91 TRANSISTOR PACKAGE Search Results

IRG4BC10KD

Contextual Info: PD -91 73 4A International IO R R e c tifi ST IRG4BC10KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • High sh o rt circu it rating op tim ize d fo r m otor control, tsC = 1 0 js, @ 3 6 0 V V CE (start , T j = 125°C,

E 7805 8pin ic

Abstract: MAX691 MAX690 MAX690CPA MAX691CPE 7805 regulator pin diagram
Contextual Info: / k l/ J X I / k l Microprocessor Supervisory Circuits The MAX690, MAX692 and MAX694 are supplied in 8-pin packages and provide four functions: 1 A Reset output during power-up, power-down and brownout conditions.

03N06C

Abstract: 03N06CLE MC 140 transistor
Contextual Info: ili HARRIS RLD03N06CLE, uu s e m ic o n d u c to r RLD03N06CLESM, RLP03N06CLE 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packages JEDEC TO-220AB • 0.30A , 60V •

C1847

Contextual Info: I HIGH-PERFORMANCE AIGaAs PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 1 I I MCT5210 MCT5211 PACKAGE DIMENSIONS DESCRIPTION The MCT-521X are high performance CMOS/LSTTL logic compatible phototransistor type optically coupled isolator products. They are constructed using a very low

NE42484C

Abstract: transistor NEC D 586 NEC Ga FET marking L NE42484C-T1 28609 low noise FET NEC U ne42484 nec gaas fet marking NEC 2533 NEC Ga FET
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

Contextual Info: Product Description SXA-289 Stanford M icrodevices’ SXA-289 am plifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT am plifier housed in low-cost surface-m ountable plastic package. These HBT am plifiers are fabricated using m olecular beam epitaxial growth technology which produces

TCHT1130

Abstract: Ex-90C
Contextual Info: J TELEFUNKEN ELECTRONIC 4ME D HH fi^GO^ti 001117= T E i ALG6 Optocouplers ' T ' H I - $ "J? Standard Opto Isolators w ith Transistor Output Package Type C haracteristics UL-recognized: CTR File No. E 76414 Dimensions see page 56 - _ i j bW 1T T m N ; liJ

BFT92

Abstract: "MARKING CODE W1*" GHz PNP transistor marking G SOT323 Transistor SOT323 Marking 87 SOT323 WM BFT92W marking L2 SOT23 6
Contextual Info: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT92W uses the same crystal as the SOT23 version, BFT92. • Gold metallization ensures

NE334501

Abstract: transistor k 2761 NEC D 822 P NEC Ga FET marking C nec gaas fet marking NEC Ga FET marking A ap 2761 l transistor NE334S01 low noise FET NEC U
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE334S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons.

Contextual Info: {Product*, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MRF839F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 6L FLG The MRF839F is Designed for Class AB, Common Emitter

Contextual Info: HEWLETT — PACKARD/ CMPNTS WLjm HEWLETT blE D • AT-00572 PACKARD MM475A4 000T776 T?T H H P A Up to 1 GHz General Purpose Silicon Bipolar Transistor Features TO-72 Package • 19.0 dBm typical Pi dB at 1.0 GHz • 6.0 dB typical GidB at 1.0 GHz • 2.3 dB typical NFo at 1.0 GHz

BLY93

Abstract: bly89 BLY78 bly91 BLX65 bly93a BFY 94 transistor bly 78 BLW11 BLY88
Contextual Info: BLW14 SILICON NPN VHF POWER TRANSISTOR 873 H IG H G A IN O U TP U T FOR 13 V FM A P P L IC A TIO N S • 7 W a t 470 M H z • Stripline Package • Distributed Construction mechanical data TO-129 absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e .36 V

LM567 application note

Abstract: IC LM567 LM567 application lm567
Contextual Info: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents LM567, LM567C SNOSBQ4E – MAY 1999 – REVISED DECEMBER 2014 LM567x Tone Decoder 1 Features 3 Description • The LM567 and LM567C are general purpose tone decoders designed to provide a saturated transistor

InGaAs HEMT mitsubishi

Abstract: MGF4714
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4714AP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT | DESCRIPTION The M G F 4 7 1 4 A P lo w -n o is e H E M T H ig h Electron M o bili­ ty Transistor is designed fo r use in X band am plifiers. The plastic m old package offer high cost perform ance,

HPAC-70GT

Abstract: TRANSISTOR 117a HXTR-6106 S21E
Contextual Info: COMPONENTS Features ' HXTR-6106 1.98 0 . 078 1.57 (0 . 0 62 ) GUARANTEED LOW NOISE FIGURE 2.7 dB at 2 GHz Max., 2.5 dB Typical 3.8 dB at 4 GHz Typical HIGH ASSOCIATED GAIN 11.5 dB Typical at 2 GHz WIDE DYNAMIC RANGE RUGGED HERMETIC PACKAGE Co-fired Metal/Ceramic Construction

Contextual Info: Voltage Regulators AN8013SH Single-channel step-up or step-down DC-DC converter control IC Unit: mm • Overview +0.1 0.15–0.05 SSOP010-P-0225 Note The package of this product will be changed to lead-free type SSOP010-P-0225A). See the new package dimensions section later of this

AT-60535

Contextual Info: A V A N T E K INC 20E D AVANTEK • UMlTbb 0QGbS13 T AT-60535 Up to 6 GHz Low Noise Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 d B typical at 4.0 GHz

ZO 107 MA

Abstract: 341S
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low

2SK1591

Abstract: TC-2300A
Contextual Info: . . MOS FIELD EFFECT TRANSISTOR 2 S K 1 5 91 IM-CHANNEL MOS FET FOR SWITCHING The 2SK1591, N-channel vertical type MOS FET, is a switching PACKAGE DIMENSIONS Unit : mm 2.8 + 0.2 1.5 device w hich can be driven d ire ctly by the o u tp u t o f ICs having a 5 V

fe 5571

Abstract: KS 0302
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5183 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low N oise • NF = 1.3 dB typ. @ Vce = 2 V, Ic = 3 m A, f = 2 G H z • NF = 1.3 dB

Contextual Info: DATA SH EE T MOS FIELD EFFECT TRANSISTOR 2SK3105 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The 2SK3105 is a switching device which can be driven directly by a 4 V power source. The 2SK3105 features a low on-state resistance and excellent

LM567

Abstract: IC LM567 LM567 application note A 673 C2 transistor LM567 datasheet lm567 schematic diagram LM567CN datasheet LM567 lm567 applications LM567C
Contextual Info: LM567/LM567C Tone Decoder General Description The LM567 and LM567C are general purpose tone decoders designed to provide a saturated transistor switch to ground when an input signal is present within the passband. The circuit consists of an I and Q detector driven by a voltage

Contextual Info: Ordering number: EN 4598A Thick Film Hybrid 1C STK400-070 AF Power Amplifier Split Power Supply (40W + 40W + 40W min, THD = 0.4%) Overview Package Dimensions The STK400-070 is a thick-film audio power amplifier IC belonging to a series in which all devices are pin compati­

Contextual Info: ell Stanford Microdevices Product Description SLN-286 Stanford M icrodevices’ SLN-286 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost surface mount plastic package. A Darlington configuration is used for broadband performance