FMIT Search Results

Contextual Info: ^ctdxy isStmi-Conchctoi ZPiotLata., Una. TELEPHONE: 873 376-2882 (212) 227-6008 FAX! (973) 378 0960 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.SA 2N2483 NPN SILICON TRANSISTOR MECHANICAL DATA CASE: TERMINAL CONNECTIONS: JFflFC TO-1H Icnrt 1 Fmittnr l.o.irt 2 Unso

Contextual Info: H AR Fas HGTG34N100E2 December 1993 34A, 1000V N-Channel IGBT Package Features • JEDEC STYLE TO-247 TOP VIE N 34 Amp 1000 Volt • Latch Free Operation 3 FMITTFR • Typical Fall T im e-710ns • COLLECTOR BOTTOM SIDE METAL I , High Input Impedance

SA002

Contextual Info: Europe: +49 / 7731 8399 0 | Email: info@meder.com Artikel Nr.: USA: +1 / 508 295 0771 | Email: salesusa@meder.com Asia: +852 / 2955 1682 | Email: salesasia@meder.com 9134902054 Artikel: MK13-1B90D-500W Magnetische Eigenschaften Anzug Pr fmittel Bedingung Min

Contextual Info: í HITACHI 2SC2898 SILICON NPN T R IP LE DIFFUSED HIGH VO L?AGE, HIGH S P EED AND HIGH POWER SWITCHING H TT Í ~' -Ö.BI F 'f 52 •* J. .a j 1 Bawr 2 OoMevtw " T — *- ? I - * i 1 t-umw 'n+ I J. V fmiticr {'Diinentìomut mtn _>•>*».< 1 1RS tu. JE D E C TO-220AB)

Contextual Info: H ig h P o w er A lu m in u m N itrid e T er m in a tio n s FMITN1500500L0DHTJ F eatures Low VSWR, Optimum Microwave Match S - Parameter Data Provided Safe Aluminum Nitride Substrate Robust Tantalum Nitride Thin Film Resistor Flanged Package with Lead Standard

30N120D2

Abstract: HGTG30N120D2 U 665
Contextual Info: HGTG30N120D2 30A, 1200V N-Channel IGBT December 1993 Package Features JEDEC STYLE TO-247 TOP VIEW • 30 Am p 1200 Volt • Latch Free Operation ^FMITTFH • Typical Fall T im e - 580ns COLLECTOR BOTTOM SIDE METAL I • High Input Im pedance • Low C onduction Loss

50X50X15

Contextual Info: ' ^ SatCouX Electronics J FMITN0100500XENFGG T h in F ilm W id e b a n d T e r m in a t io n F ea tu r es Surface mount chip termination ideal for applications hybrid circuits requiring high frequency performance in a small form factor Aluminum Nitride (AIN) substrate supports 20W

Contextual Info: SILICON NPN EPITAXIAL TYPE P OWE R A M P L I F I E R 2SC4539 APPLICATIONS P O WE R S W I T C H I N G A P P L I C A T I O N S Low Saturation Voltage : V C E s a t = 0 .5 V ( M a x .) (Ic =700mA) High Speed Switching Time: t stg=0.3ns Small Flat Package

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

KF 13003 F

Abstract: KF 13003 tt442 13003 HJ mxl 5007 54HCT14 54HC14 HJ 13003 marking 2U diode t5 2yl1
Contextual Info: MIL-M-38510/657 30 S e p t e m b e r 1 9 8 6 MILITARY SPECIFICATION M I C R O C I R C U I T S , DI GI TA L, HIGH SPEED, CMOS, BUFFER GATES, MONOLITHIC SILICON T h i s s p e c i f i c a t i o n is a p p r o v e d ments and Agencies of the 1. f o r u s e b y all D e p a r t ­

Comstron

Abstract: FA4720 FA4720-1 FA4720-2 FA4720-3 FA4720-4 FA4720-5 FA4720-6 FA4720-7 FA4720-8
Contextual Info: X LA S ISO 9001 C ER T I FIE I NC . A E RO LE B F D FA4720 SERIES FIBER OPTIC 5 Pole Bessel Absorptive LowPass Filters FE ATU R E S • • • • • • • 5 Pole Bessel polynomial filter characteristic Non-reflective Absorptive thick/thin film technology

LT111A

Contextual Info: uim TECHNOLOGY LT111A/LT311A LM111/LM311 Voltage Comparator F€OTUR€S DCSCfflPTIOn • ■ ■ ■ ■ ■ ■ The LT111A is an improved version of the LM 111 gen­ eral purpose comparator. These new devices offer maximum input offset voltage of 1.0mV and input off­

Contextual Info: "iS GENERAL SEMICONDUCTOR 3918590 GENERAL S EMI CON DUC T OR DE | 3^105^0 000504b 95D General Semiconductor J^L • Industries, Inc. 02046 PO W E R T R A N S IE N T SUPPRESSOR 587B 120VA C Pow er Line 5 q U H H E TÎ C O M P A N Y Î f ô e r t e r a l Se m ïconductor.ïndustrie s, o c .'h a sâ e v e l-v

Contextual Info: 'BIG IDEAS IN POWER BIG POWER" PowerTech 90 AMPERES PT-7511 SILICON IUPIM TRANSISTO R M A X IM U M R A T IN G S SVM BO L Collccto* Bsio Voltann V CBD CfllhcTcw-Emlnii V iil L a r j c - Ppw«r Jt 10V 3 0 4 'cm ' Current P i s ^ i p a t i 'i n 2nov V EdO Pi^k C o lla to r Current

DTA143

Abstract: marking a5 5B marking transistor A5 transistors sot-23 5C TRANSISTOR MARKING CBO 40V CEO 25V EBO 5V transistor marking A5 a5 marking transistor 5b 5b transistor
Contextual Info: DTA1 43 PNP EPTTAXIAL SILICON TRANSISTOR SURFACE MOUNT TRANSISTORS SOT-23 3 1 2 3 ANODE 1 2 CATHODE CATHODE Marking A5/5B/5C ABSOLUTE MAXIMUM RATINGS o Ta=25 C Symbol Characteristic Rating Unit Collector-Emitter Voltage V CEO -45 Emitter-Base Voltage V CBO

11.0592mhz crystal oscillator

Abstract: EN50065-1 1042U PLCC28 ST7536 ST7536CFN 712-12 7492 pin out diagram
Contextual Info: Æ 7 SG S-THO M SO N ST7536 POWER LINE MODEM } • HALF DUPLEX SYNCHRONOUS FSK MODEM • Two programmable channels for 600bps data rate • Two programmable channels for 1200bps data rate ■ AUTOMATICALLY TUNED Rx AND Tx FILTERS ■ TX CARRIER FREQUENCIES SYNTHESIZED

B85 diode

Abstract: DIODE B89 IRGPC50KD2
Contextual Info: 09/01/94 1 1 ;IS i 57 I n t e r n a t 'I R e c tifie r - > Product In fo rn ai ion Page 002 P D - 9.1123 International S Rectifier IRGPC50KD2 Short Circuit Rated UHraFasl CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFASI SOF T RECOVERY DIODE Features

NCR53C80

Abstract: NCR5380 NCR 5380 53C80S 53C80-40 53c80 DMQB INSTEAD OF DM L53C80 ncr53c8
Contextual Info: L53C80 SCSI Bus Controller DEV IC ES IN C O R PO R A TE D FEATURES □ A syn ch ro n o u s T ran sfer R ate U p to 4 M b y te s / sec □ L o w P o w e r C M O S T ech n o lo g y □ R ep laces N C R 53C80/ 53C80-40 and A M D Am 53C80 □ O n-C hip S C S I B u s D rive rs

FM Tuner I2C program Panasonic

Abstract: smoke DETECTOR CIRCUIT DIAGRAM pcb layout FM radio I2C an1820 SDC00079AEB D070 F450
Contextual Info: DATA SHEET Part No. AN18208A Package Code No. LQFP048-P-0707A Publication date: July 2009 SDC00079AEB 1 AN18208A Contents „ Overview …………………………………………………….……………………………………………………… 3

AM FM counter driver

Abstract: AN7289NSC AN7293NSC
Contextual Info: ICs for FM/AM Tuner AN7289NSC FM-FE+AM IC for car radio • Overview Unit: mm The AN7289NSC is an IC having FM-FE+AM functions for car radio. A tuner block of car radio can be constructed by combination of this IC and the AN7293NSC / NFBQ. 17.81±0.3 17 1

3AA1

Contextual Info: MITSUBISHI cCONTROL / DRIVER IC> M63000SP 4-CHANNEL ACTUATOR MOTOR DRIVER D E S C R IP T IO N PIN C O N F IG U R A T IO N T O P V IE W The M63000SP is a semiconductor 1C developed as the motor driver used to CD Player,CD-ROM. This circuit includes Standby circuit,TSD circuit and 4-Channel

Contextual Info: Code Mercenaries Hard- und Software GmbH Pressemitteilung JoyWarrior24F8 - Beschleunigungssensor am USB Code Mercenaries Hard- und Software GmbH K a r l - M a r x - S t r. 1 4 7 a 12529 Sch nefeld OT Gro§ziethen Germany T e l : x49-3379-20 50 9 20 Fax: x49-3379-20 50 9 30

AN7289NSC

Abstract: FM/AM FM counter driver 2SC828A 2SK435 AN7289NFBQ FM tuner car K3110
Contextual Info: ICs for FM/AM Tuner AN7289NFBQ FM-FE+AM IC for car radio Unit : mm 24 16 0.3+0.10 –0.05 25 0.8 • Features 9.2±0.4 The AN7289NFBQ is an IC having FM-FE+AM functions for car radio. A tuner block of car radio can be constructed by using this IC and the AN7293NSC/NFBQ.

TIC42

Abstract: 40P0K M5M411664AJ M4116 m5m411664
Contextual Info: MITSUBISHI LSIs M 5 M 4 1 1 6 6 4 A J ,T P 1 -5 ,-6 ,-7 ,-5 S ,-6 S ,-7 S FAST PAGE MODE 1048576-BIT 65536-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION This is a family of 65536-word by 16-bit dynamic RAMs, fabricated with a high perform ance C M O S process, and is ideal for