FLM6472 Search Results
FLM6472 Datasheets (22)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| FLM6472-12D | Unknown | FET Data Book | Scan | 102.65KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM6472-12F |
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C-Band Internally Matched FET | Original | 97.62KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM6472-12F | Unknown | C-Band internally Matched FET | Original | 284.46KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM6472-14/D | Unknown | FET Data Book | Scan | 102.63KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM6472-18F | Eudyna Devices | C-Band Internally Matched FET | Original | 285.24KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM6472-18F |
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C-Band Internally Matched FET | Original | 97.76KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM6472-25D | Unknown | FET Data Book | Scan | 102.64KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM6472-25F | Eudyna Devices | C-Band Internally Matched FET | Original | 284.49KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM6472-25F |
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C-Band Internally Matched FET | Original | 97.49KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM6472-4C | Unknown | High Frequency Device Data Book (Japanese) | Scan | 59.99KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM6472-4C/D | Unknown | FET Data Book | Scan | 102.63KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM6472-4D | Unknown | High Frequency Device Data Book (Japanese) | Scan | 59.99KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM6472-4F |
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C-Band Internally Matched FET | Original | 93.74KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM6472-4F | Unknown | C-Band Internally Matched FET | Original | 254.5KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM6472-6D | Unknown | High Frequency Device Data Book (Japanese) | Scan | 59.99KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM6472-6D | Unknown | FET Data Book | Scan | 102.64KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM6472-6F | Eudyna Devices | C-Band Internally Matched FET | Original | 253.9KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM6472-6F |
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C-Band Internally Matched FET | Original | 93.15KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM6472-8C | Unknown | High Frequency Device Data Book (Japanese) | Scan | 59.99KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM6472-8C/D | Unknown | FET Data Book | Scan | 102.64KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FLM6472 Price and Stock
EUDYNA Devices Inc. FLM6472-6FTrans RF FET 15V 3-Pin Case IB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FLM6472-6F | 195 |
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Get Quote | |||||||
FUJITSU Limited FLM6472-4C |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FLM6472-4C | 24 |
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Buy Now | |||||||
FLM6472 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: F, , FLM6472-4C J Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 36dBm Typ. High Gain: G ^ b = 8.0dB (Typ.) High PAE: riadd = 30% (Typ.) Broad Band: 6.4 ~7.2GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package |
OCR Scan |
FLM6472-4C 36dBm FLM6472-4C | |
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Contextual Info: FLM6472-35DA F| r U J Il j U Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 45.5dBm Typ. High Gain: G-j^B = 6.0dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 34.5dBm Broad Band: 6.4 ~ 7.2GHz |
OCR Scan |
FLM6472-35DA -45dBc FLM6472-35DA | |
U/25/20/TN26/15/850/FLM6472-18DAContextual Info: FLM6472-18DA F| I Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 30% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q |
OCR Scan |
FLM6472-18DA -45dBc FLM6472-18DA VD-164 U/25/20/TN26/15/850/FLM6472-18DA | |
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Contextual Info: FLM6472-25F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 44.5dBm Typ. • High Gain: G1dB = 9.5dB (Typ.) • High PAE: hadd = 38% (Typ.) • Low IM3 = -46dBc@Po = 33.5dBm • Broad Band: 6.4 to 7.2GHz • Impedance Matched Zin/Zout = 50ohm |
Original |
FLM6472-25F -46dBc 50ohm FLM6472-25F 25deg 25deatched | |
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Contextual Info: FLM6472-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: hadd = 36% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50W |
Original |
FLM6472-8F -46dBc FLM6472-8F FCSI0598M200 | |
FLM64724FContextual Info: FLM6472-4F C-Band Internally FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: hadd = 36% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package |
Original |
FLM6472-4F -46dBc FLM6472-4F FCSI0999M200 FLM64724F | |
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Contextual Info: FLM6472-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: hadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50W |
Original |
FLM6472-6F -46dBc FLM6472-6F FCSI0598M200 | |
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Contextual Info: FLM6472-6F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 38.5dBm Typ. • High Gain: G1dB = 9.5dB (Typ.) • High PAE: hadd = 37% (Typ.) • Low IM3 = -46dBc@Po = 27.5dBm • Broad Band: 6.4 to 7.2GHz • Impedance Matched Zin/Zout = 50ohm |
Original |
FLM6472-6F -46dBc 50ohm FLM6472-6F 25deg | |
FLM6472-8FContextual Info: FLM6472-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 36% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω |
Original |
FLM6472-8F -46dBc FLM6472-8F FCSI0598M200 | |
fet 547
Abstract: FLM6472-8F
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Original |
FLM6472-8F -46dBc FLM6472-8F fet 547 | |
6472-4DContextual Info: FLM6472-4D Internally Matched Power GaAs FETs ABSOLUTE MAXIMUM RATING Am bient Tem perature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 25 w Total Power Dissipation Tc = 25°C Pt Storage Temperature |
OCR Scan |
FLM6472-4D 6472-4D | |
FLM6472-18FContextual Info: FLM6472-18F -C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 43.0dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: riadd = 37% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm |
OCR Scan |
FLM6472-18F -46dBc FLM6472-18F FCSI0598M200 | |
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Contextual Info: FLM6472-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω |
Original |
FLM6472-6F -46dBc FLM6472-6F | |
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Contextual Info: FLM6472-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω |
Original |
FLM6472-18F -46dBc FLM6472-18F | |
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Contextual Info: FLM6472-8D Internally Matched Power GaAs FETs RI lîrrQi r UJ11jU FEATURES • • • • • • • High Output Power: P ^ b = 39dBm (Typ. High Gain: = 7.0dB (Typ.) High PAE: riadd = 29% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q |
OCR Scan |
FLM6472-8D UJ11jU 39dBm -45dBc 28dBm FLM6472-8D | |
FLM6472-4FContextual Info: FLM6472-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 36% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω |
Original |
FLM6472-4F -46dBc FLM6472-4F FCSI0999M200 | |
FLM6472-6FContextual Info: FLM6472-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω |
Original |
FLM6472-6F -46dBc FLM6472-6F FCSI0598M200 | |
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Contextual Info: FLM6472-18DA Internally Matched Power GaAs b'ETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage VGS -5 V 83.3 w °c °c Total Power Dissipation Pt Tc = 25°C Storage Temperature |
OCR Scan |
FLM6472-18DA Sou12 37dBm 35dBm 33dBm 31dBm 29dBm 27dBm | |
FLM6472-12d
Abstract: FLM6472-12DA
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OCR Scan |
FLM6472-12DA 41dBm -45dBc 30dBm FLM6472-12DA FLM6472-12d | |
FLM6472-25FContextual Info: FLM6472-25F -C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 44.5dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: riadd = 38% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm |
OCR Scan |
FLM6472-25F -46dBc FLM6472-25F FCSI0598M200 | |
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Contextual Info: FLM6472-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 36% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω |
Original |
FLM6472-4F -46dBc FLM6472-4F | |
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Contextual Info: FLM6472-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω |
Original |
FLM6472-12F -46dBc FLM6472-12F | |
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Contextual Info: FLM6472-8F - C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 39.5dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: riadd = 36% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm |
OCR Scan |
FLM6472-8F -46dBc FLM6472-8F FCSI0598M200 | |
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Contextual Info: FLM6472-6D r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 38.0dBm Typ. High Gain: G ^ b = 8.0dB (Typ.) High PAE: r iadd = 34% (Typ.) Low IM 3 = -45dBc@Po = 27dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q |
OCR Scan |
FLM6472-6D UJ11jU -45dBc 27dBm | |