SAMSUNG 4gb NAND Flash Qualification Report
Abstract: K9K4G08U0M K9K4G08Q0M K9K4G08Q0M-PCB0 K9K4G08U0M-PCB0 K9K4G16Q0M K9K4G16U0M K9W8G08U1M nand hamming code 2k bytes k9xxg16xxm
Contextual Info: K9W8G08U1M K9K4G08Q0M K9K4G08U0M Advance FLASH MEMORY K9K4G16Q0M K9K4G16U0M Document Title 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Feb. 19. 2003 Advance 0.1 1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package
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k9w8g08u1mk9k4g08q0mk9k4g08u0mk9k4g16q0m+8k9k4g16u0mk9w8g16u1m-ycb0k9k4g08q0m-pcbsamsung 4gb nand flash qualification reportk9k4g08q0m-pcb0k9k4g08u0m-pcb0nand hamming code 2k bytesk9xxg16xxm
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K9F2G08X0M
Abstract: 48-pin TSOP K9F2G16U0M K9F2G08U0M K9F2G08U0M-PCB0 K9F2G08Q0M K9F2G08Q0M-PCB0 K9F2G16Q0M nand hamming code 2k bytes k9f2g0
Contextual Info: Preliminary FLASH MEMORY K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001 Advance 0.1 1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device Page 34
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k9f2g08q0mk9f2g16q0mk9f2g08u0mk9f2g16u0m+6k9f2g08x0m48-pin tsopk9f2g08u0m-pcb0k9f2g08q0m-pcb0nand hamming code 2k bytesk9f2g0
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K9XXG08XXM
Abstract: k9w8g16u1m K9K4G08Q0M-Y SAMSUNG 4gb NAND Flash Qualification Report Samsung K9W8G08U1M K9K4G08Q0M K9K4G08Q0M-PCB0 K9K4G08U0M K9K4G08U0M-PCB0 K9K4G16Q0M
Contextual Info: K9W8G08U1M K9K4G08Q0M K9K4G08U0M Advance FLASH MEMORY K9K4G16Q0M K9K4G16U0M Document Title 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Feb. 19. 2003 Advance 0.1 1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package
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k9w8g08u1mk9k4g08q0mk9k4g08u0mk9k4g16q0m+9k9k4g16u0mk9w8g16u1m-ycb0k9k4g08q0m-pcb0k9xxg08xxmk9w8g16u1mk9k4g08q0m-ysamsung 4gb nand flash qualification reportsamsung k9w8g08u1mk9k4g08u0m-pcb0
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K9K4G08U0M-YCB0
Abstract: K9K4G16U0M-YCB0 K9K4G16Q0M-YCB0 K9K4G08Q0M-YCB0 K9K4G08U0M
Contextual Info: Advance FLASH MEMORY K9K4G08Q0M-YCB0,YIB0 K9K4G16Q0M-YCB0,YIB0 K9K4G08U0M-YCB0,YIB0 K9K4G16U0M-YCB0,YIB0 Document Title 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Feb. 19. 2003
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k9k4g08q0m-ycb0k9k4g16q0m-ycb0k9k4g08u0m-ycb0k9k4g16u0m-ycb0+1k9k4g08u0m
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K9F2G08U0M-YCB0
Abstract: K9F2G16U0M-Y
Contextual Info: K9F2G08Q0M-YCB0,YIB0 K9F2G08U0M-YCB0,YIB0 Advance FLASH MEMORY K9F2G16Q0M-YCB0,YIB0 K9F2G16U0M-YCB0,YIB0 Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001
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k9f2g08q0m-ycb0k9f2g08u0m-ycb0k9f2g16q0m-ycb0k9f2g16u0m-ycb0+2k9f2g08q0mk9f2g16u0m-y
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K9F2G08Q0M
Abstract: K9F2G08U0M K9F2G08U0M-PCB0 K9F2G08Q0M-PCB0 K9F2G16Q0M K9F2G16U0M K9F2G08Q0M-Y
Contextual Info: Preliminary FLASH MEMORY K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001 Advance 0.1 1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device Page 34
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k9f2g08q0mk9f2g16q0mk9f2g08u0mk9f2g16u0m+3k9f2g08u0m-pcb0k9f2g08q0m-pcb0k9f2g08q0m-y
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K9F2G08U0M-YCB0
Contextual Info: K9F2G08Q0M-YCB0,YIB0 K9F2G08U0M-YCB0,YIB0 Advance FLASH MEMORY K9F2G16Q0M-YCB0,YIB0 K9F2G16U0M-YCB0,YIB0 Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001
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K9F2G08X0M
Abstract: K9F2G08U0M-PCB0 K9F2G08Q0M K9F2G08Q0M-PCB0 K9F2G08U0M K9F2G16Q0M K9F2G16U0M K9F2G08Q0M-Y K9F2G16U0M-Y K9F2G16U0M-Y application
Contextual Info: Preliminary FLASH MEMORY K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001 Advance 0.1 1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device Page 34
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k9f2g08q0mk9f2g16q0mk9f2g08u0mk9f2g16u0m+6k9f2g08x0mk9f2g08u0m-pcb0k9f2g08q0m-pcb0k9f2g08q0m-yk9f2g16u0m-yk9f2g16u0m-y application
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K9K4G08X0M
Abstract: ecc 2112 samsung 8GB Nand flash
Contextual Info: Advance FLASH MEMORY K9K4G08Q0M-YCB0,YIB0 K9K4G16Q0M-YCB0,YIB0 K9K4G08U0M-YCB0,YIB0 K9K4G16U0M-YCB0,YIB0 Document Title 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Feb. 19. 200 3
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k9k4g08q0m-ycb0k9k4g16q0m-ycb0k9k4g08u0m-ycb0k9k4g16u0m-ycb0+3k9k4g08x0mecc 2112samsung 8gb nand flash
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K9W8G08U1M-YCB0
Abstract: K9K4G08U0M-XIB0 SAMSUNG 4gb NAND Flash Qualification Report K9K4G08U0M
Contextual Info: K9W8G08U1M K9K4G08U0M FLASH MEMORY Document Title 512M x 8 Bit / 1G x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Feb. 19. 2003 Advance 0.1 1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package Mar. 31. 2003
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k9w8g08u1mk9k4g08u0mk9w8g16u1m-ycb0k9k4g08q0m-pcb0+7k9k4g08u0m-pcb0k9k4g16u0m-pcb0k9k4g16q0m-pcb0k9w8g08u1m-pcb0k9w8g08u1m-ycb0k9k4g08u0m-xib0samsung 4gb nand flash qualification report
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K9K4G08U0M
Contextual Info: K9W8G08U1M K9K4G08U0M FLASH MEMORY Document Title 512M x 8 Bit / 1G x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Feb. 19. 2003 Advance 0.1 1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package Mar. 31. 2003
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k9w8g08u1mk9k4g08u0mk9w8g16u1m-ycb0k9k4g08q0m-pcb0+3k9k4g08u0m-pcb0k9k4g16u0m-pread200mv
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K9K4G08U0M-XIB0
Abstract: K9W8G08U1M-YCB0 48pin-TSOP1 K9K4G08U0M-XCB0 K9K4G08U0M-PCB0 K9K4G08U0M
Contextual Info: K9W8G08U1M K9K4G08U0M FLASH MEMORY Document Title 512M x 8 Bit / 1G x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Feb. 19. 2003 Advance 0.1 1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package Mar. 31. 2003
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SAMSUNG 4gb NAND Flash Qualification Report
Abstract: Samsung K9W8G08U1M K9K4G08U0M-YCB0 K9K4G08U0M-PCB0 K9W8G08U1M K9W8G08U1M-PCB0 May-31 1220AF K9K4G08U0M 48-pin TSOP
Contextual Info: K9W8G08U1M K9K4G08U0M FLASH MEMORY Document Title 512M x 8 Bit / 1G x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Feb. 19. 2003 Advance 0.1 1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package Mar. 31. 2003
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k9w8g08u1mk9k4g08u0mk9w8g16u1m-ycb0k9k4g08q0m-pcb0+10k9k4g08u0m-pcb0k9k4g16u0m-pcbess200mvsamsung 4gb nand flash qualification reportsamsung k9w8g08u1mk9k4g08u0m-ycb0k9w8g08u1m-pcb0may-311220af48-pin tsop
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512M x 8 Bit NAND Flash Memory
Abstract: K9F2G16U0M K9F2G08Q0M K9F2G16X0M
Contextual Info: K9K4G08U1M K9F2G08U0M K9F2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001 Advance 0.1 1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device Page 34
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k9k4g08u1mk9f2g08u0mk9f2g16u0m200mv+3512m x 8 bit nand flash memoryk9f2g08q0mk9f2g16x0m
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512M x 8 Bit NAND Flash Memory
Abstract: K9F2G16U0M K9F2G08U0M K9F2G08U0M-PCB0 samsung toggle mode NAND Serial NAND K9K4G08U1M K9F2G08Q0M-PCB0
Contextual Info: Preliminary FLASH MEMORY K9K4G08U1M K9F2G08U0M K9F2G16U0M Document Title 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001 Advance 0.1 1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device Page 34
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k9k4g08u1mk9f2g08u0mk9f2g16u0m512m x 8 bit nand flash memory+4k9f2g08u0m-pcb0samsung toggle mode nandserial nandk9f2g08q0m-pcb0
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nand hamming code 2k bytes
Contextual Info: Preliminary FLASH MEMORY K9K4G08U1M K9F2G08U0M K9F2G16U0M Document Title 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Sep. 19.2001 Advance 0.1 1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device Page 34
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k9k4g08u1mk9f2g08u0mk9f2g16u0m9f2g08u0m+1nand hamming code 2k bytes
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KM29U128AT
Abstract: SAMSUNG NAND Flash Qualification Report K9F2808U0A
Contextual Info: K9F2808U0A-YCB0, K9F2808U0A-YIB0 FLASH MEMORY Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Advanced Information 0.0 Initial issue. April 10th 1999 0.1 1. Revised real-time map-out algorithm refer to technical notes
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k9f2808u0a-ycb0k9f2808u0a-yib0km29u128atkm29u128ait+448-pin1220fsamsung nand flash qualification reportk9f2808u0a
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K9F8008W0M
Abstract: K9F8008W0M-TCB0 K9F8008W0M-TIB0 KM29W8000IT KM29W8000T
Contextual Info: K9F8008W0M-TCB0, K9F8008W0M-TIB0 FLASH MEMORY Document Title 1M x 8 bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Data Sheet 1997 April 10th 1997 Advance 1.0 Data Sheet 1998 1. Changed tBERS parameter : 5ms Typ. → 2ms(Typ.)
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Contextual Info: K9F2808U0A-YCB0, K9F2808U0A-YIB0 Advanced Information FLASH MEMORY Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Advanced Information 0.0 Initial issue. April 10th 1999 0.1 1 Revised real-time map-out algorithm refer to technical notes)
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Contextual Info: K9F1608W0B-TCB0, K9F1608W0B-TIB0 Preliminary FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1999 Preliminary 0.1 1 Revised real-time map-out algorithm refer to technical notes)
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k9f1608w0b-tcb0k9f1608w0b-tib0km29w16000btkm29w16000bit |
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date code marking samsung Nand
Abstract: K9F2808U0A K9F2808U0A-YIB0 K9F2808U0A-YCB0 KM29U128AIT KM29U128AT samsung flash marking
Contextual Info: K9F2808U0A-YCB0, K9F2808U0A-YIB0 FLASH MEMORY Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Advanced Information 0.0 Initial issue. April 10th 1999 0.1 1. Revised real-time map-out algorithm refer to technical notes
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k9f2808u0a-ycb0k9f2808u0a-yib0km29u128atkm29u128ait+548-pin1220fdate code marking samsung nandk9f2808u0asamsung flash marking
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K9F5608U0M-YCB0
Abstract: date code marking samsung Nand K9F5608U0M K9F5608U0M-YIB0 264Mbit
Contextual Info: K9F5608U0M-YCB0,K9F5608U0M-YIB0 FLASH MEMORY Document Title 32M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April. 10th 1999 0.1 Revised real-time map-out algorithm refer to technical notes July. 23th 1999
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k9f5608u0m-ycb0k9f5608u0m-yib0km29u256tkm29u256it+548-pin1220fdate code marking samsung nandk9f5608u0m264mbit
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400F
Abstract: KM29W8000IT KM29W8000T
Contextual Info: KM29W8000T, KM29W8000IT FLASH MEMORY Document Title 1M x 8 bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Data Sheet 1997 April 10th 1997 Advance 1.0 Data Sheet 1998 1. Changed tBERS parameter : 5ms Typ. → 2ms(Typ.) 10ms(Max.) → 4ms(Max.)
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km29w8000tkm29w8000it400f |
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400F
Abstract: KM29U64000AIT KM29U64000AT
Contextual Info: KM29U64000AT, KM29U64000AIT FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1999 Preliminary 0.1 1. Revised real-time map-out algorithm refer to technical notes
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