FLANGED PIN Search Results

7111

Abstract: 24017
Contextual Info: Models 7111, 7113, 7114, 7115 XLR D Square Flanged Panel Receptacles Model 7111 D Series Square Flanged Panel Receptacle Horizonal PCB F , Black Model 7113 D Series Square Flanged Panel Receptical Solder Cups 3 Pin (M), Black Model 7114 D Series Square Flanged Panel Receptacle Solder

7107

Abstract: 7108 XLR 4pin female 7107 datasheet 7107 applications 7109 7110
Contextual Info: Models 7106, 7107, 7108, 7109 AND 7110 XLR M , XLR (F): 3, 4-Pin Flanged Panel Mount Model 7106 XLR (M) 4-Pin Rectangular Flanged Mount Model 7108 XLR (F) 3-Pin Rectangular Flanged Mount, Black Model 7107 XLR (F) 4-Pin Rectangular Flanged Mount Use for your audio applications

300006

Abstract: EG-TS-M50-150-3 E251818 30.0001
Contextual Info: Advanced Contact Technology Roboticline Steckverbinder für Automation Connectors for Automatic Systems Connecteurs pour systèmes d'automation Flanschdosen / Flanschstecker Flanged male sockets / Flanged female plugs Prises mâles à bride / Prises femelles à bride

EG-TS-M50-150-3

Abstract: E251818
Contextual Info: Multi-Contact STÄUBLI GROUP Flanschdosen Flanschstecker Flanged male sockets Flanged female plugs Prises mâles à bride Prises femelles à bride Passend für die Primärkreissteckverbinder der Produktreihe Roboticline To fit the primary circuit connectors of the Roboticline

Contextual Info: Waveguide Straights, Bends and Twists 18-325 GHz Features • ■ ■ ■ Full Waveguide Bandwidths Minimum Loss MIL-Spec Flanges Low VSWR Straight Flanged Length Model No. t 3- WG -60 X 3-(WG)-600/XX Description This series of flanged waveguide configurations takes

SLD-3091FZ

Abstract: SLD3091FZ GaN Bias 25 watt InP transistor HEMT 915 MHz RFID 27PF A191 22UF
Contextual Info: SLD-3091FZ 30 Watt Discrete LDMOS FET in Ceramic Flanged Package SLD-3091FZ Preliminary 30 WATT DISCRETE LDMOS FET IN CERAMIC FLANGED PACKAGE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: A191 Product Description Features „ „ „ 30 Watt Output P1dB

311 8 905

Abstract: LA 350 5324
Contextual Info: P A R T L U M B E R S MALE RECEPTACLES, FEMALE STRAIGHT FLOGS D im ensions : m m in. Shell size 1 1 1 2 2 2 3 4 5 5 Num ber of contact 3 4 6 4 * 8 12 17 25 35 52 C ircular (2) flanged male receptacle Square flanged male receptacle (page 5) Plug with small dia.

28F0181-1SR-10

Abstract: CAPACITOR 150 RED
Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

408-1379

Abstract: AMP catalog 82021 AMP 206044-1 connector amp 205838-1 205842-1 6 pin female circular plug AMP catalog 82021 206150-1 connector amp 206429-1 206227-2
Contextual Info: tíjca Electronics * 408-7593 Instruction Sheet was is 7593 Circular Plastic Connectors (CPC) 12APR01 Receptacle (Accepts Pin Contacts) Square Flanged Rev a Plug (Accepts Socket Contacts) Keyways Number Codes (Front and Back) Number Codes (Front and Back)

RF3928B

Abstract: power transistor gan s-band RF392
Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

ATC100B620

Abstract: L22 amplifier Gan hemt transistor RFMD
Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RFHA3944 60W GaN WIDEBAND POWER AMPLIFIER RFHA3944 Proposed 60W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF360-2 Features  Broadband Operation  Tunable from DC to 4GHz Instantaneous: 800MHz to 2500MHz Advanced GaN HEMT Technology

Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

GaN hemt

Abstract: power transistor gan s-band air surveillance system diagram using radar
Contextual Info: RF3928 RF3928280 W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

atc100a150

Abstract: power transistor gan s-band
Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RFG1M09090 700MHZ to 1000MHZ 90W GaN RFG1M09090 Proposed 700MHZ TO 1000MHZ 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features  Advanced GaN HEMT Technology  Typical Peak Modulated Power >120W  Advanced Heat-Sink Technology 

Contextual Info: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical

RFG1M09180

Abstract: ATC100B150JT
Contextual Info: RFG1M09180 RFG1M09180 700MHZ to 1000MHZ 180W GaN 700MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advanced GaN HEMT Technology Typical Peak Modulated Power >240W Advanced Heat Sink Technology