FLS35FC Search Results

diode zener ZD 621

Abstract: BTS711L1 BTS 629 A bts712l1 712L1 MARKING CODE L13 BTS712N1 siemens 10e BTS712-N1 equivalent DIODE marking L14
Contextual Info: • flS35fc.0S OOfllVbO 4^7 ■ SIEMENS PROFET BTS712N1 Smart Four Channel Highside Power Switch Features • • • • • • • • • • • • • Overload protection Current limitation Short-circuit protection Thermal shutdown Overvoltage protection

Contextual Info: SIEM ENS 16Mx 4-Bit Dynamic RAM 4k & 8k Refresh HYB 3164400J/T -50/-60 HYB 3165400J/T -50/-60 Preliminary Information • 16 777 216 words by 4-bit organization • 0 to 70 'C operating temperature • Fast access and cycle time RAS access time: 50 ns (-50 version)

LA 7612

Abstract: 4727 TLE SO CAY transistor sd 3 phase monitoring IC IED01769 IED01772 IED01780 IED01781 IED01782
Contextual Info: SIEMENS 2 -P hase S tepper-M o tor D river TLE 4727 Overview Bipolar 1C Features • 2 x 0.7 amp. outputs • Integrated driver, control logic and current control chopper • Fast free-wheeling diodes • Max. supply voltage 45 V • Outputs free of crossover current

B32591C1104

Contextual Info: B 32 590 . B 32 594 Metallized Polyester Film Capacitors MKT Coated (Powder Dipped) Standard applications Construction • Dielectric: polyethylene terephthalate (polyester) • Stacked-film technology for lead spacing 7,5 . 15 mm (100 . 400 Vdc);

2,5GHz oscillator

Abstract: 3A-34 8GHz oscillator
Contextual Info: SIEM EN S LNA/Mixer PMB 2332 Bipolar IC Target Spezification Functional Description, Benefits: • New B6HF bipolar technology, 25GHz ft • Frequency range up to 3.0GHz • Small outline T-SSOP 16 package • 2.7-4.5V voltage supply • -40°C to +85°C operational temperature range

Contextual Info: SIEMENS Silicon Switching Diodes BAW 78 A . BAW 78 D • Switching applications * • High breakdown voltage Type Marking Ordering Code tape and reel BAW 78 A BAW 78 B BAW 78 C BAW 78 D GA GB GC GD Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration

Contextual Info: BSP 129 Infineon technologies SIPMOS Small-Signal Transistor • • • • • • • VDS 240 V ¡o 0.2 A ^DS on 20 £2 N channel Depletion mode High dynamic resistance Available grouped in VGS(ttl) Type Ordering Code Tape and Reel Information Pin Conf gura tion M arking

WY smd transistor

Contextual Info: fl235bD5 SIEMENS GG^^ßDÖ TÔT • PROFETO BTS 442 E2 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation • Overload protection • Current limitation • Short-circuit protection

Contextual Info: SIEMENS Silicon Schottky Diodes BAS 125 . • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: SPD 07N20 In fin e o n technologies Preliminary Data SIPMOS Power Transistor Product Summary Features Drain-Source on-state resistance • Enhancement mode Continuous drain current • Avalanche rated V 200 Drain source voltage • N channel ^ D S o n

Siemens Halbleiter

Contextual Info: SIEMENS ICs for Communications 1-Chip Car Radio TUA 4306 Specification 16.3.99 • I aS35bGS 0 1 3 7 ^ 535 ■ Edition 16.3.99 Published by Siem ens AG, Bereich Halbleiter, M arketingKom m unikation, Balanstraße 73, 81541 München Siem ens AG 1995. All Rights Reserved.

A1E transistor

Contextual Info: B S 107 Infineon tcehnologi*» SIPMOS * Small-Signal Transistor • N channel • Enhancement mode • Logic Level 3 •^GS th = 0.8.2.0V Pin 1 VPT05548 Pin 2 S Pin 3 G Type Vbs fe BDS(on) Package Marking BS 107 200 V 0.13 A 26 a tO -92 BS 107 Type BS 107

Contextual Info: SIEMENS 3.3V 16M x 64/72-Bit SDRAM Modules 3.3V 32M x 64/72-Bit SDRAM Modules 3.3V 64M x 64/72-Bit SDRAM Modules PC100-168 pin unbuffered DIMM Modules Target Information Preliminary Information HYS64/72V16200GU HYS64/72V32220GU HYS64/72V32200GU HYS64/72V64220GU

VQE 13E

Contextual Info: SIEMENS BSM150GB170DN2 E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • ^G on.min = Ohm Type BSM150GB170DN2 E3166 h Vcz 1700V 220A Package

Contextual Info: SIEMENS C166-Family of High-Performance CMOS 16-Bit Microcontrollers C 161R I Preliminary C161RI 16-Bit Microcontroller • High Perform ance 16-bit CPU with 4-Stage Pipeline • 125 ns Instruction Cycle Tim e at 16 MHz CPU Clock • 625 ns Multiplication 1 6 x 1 6 bits , 1.25 (xs Division ( 3 2 /1 6 bit)

Mje 1532

Abstract: BFP194
Contextual Info: SIEMENS BFP 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESP: Electrostatic discharge sensitive device, observe handling precaution!

SmD TRANSISTOR a77

Abstract: smd marking code SSs
Contextual Info: BSS138 In fin e o n technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level ' ^GS th = 0.8.2.0V Pin 1 Pin 3 Pin 2 S G Type Vbs b ^D S (o n ) Package Marking BSS 138 50 V 0.22 A 3.5 Q SOT-23 SSs Type BSS 138 BSS 138

Contextual Info: SIEMENS 4M X 32-Bit Dynamic RAM Module HYM 324020S/GS-50/-60 Advanced Information • 4 194 304 words by 32-bit organization alternative 8 388 608 words by 16-bit • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time